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Transistor cooling by heat pipes

  • US 4,106,188 A
  • Filed: 07/01/1977
  • Issued: 08/15/1978
  • Est. Priority Date: 04/19/1976
  • Status: Expired due to Term
First Claim
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1. A method for fabricating a microelectronic package capable of operating with power densities extending at least to 10 kW/cm2 comprising the steps of:

  • fabricating means for defining electronic devices and circuitry and a sealed enclosure therefor, with leads extending from the electronic devices and circuitry to connection points on the exterior of the enclosure;

    adhering dielectric powder to substantially all interior surfaces of the enclosure and to substantially all exposed surfaces of the electronic devices and circuitry for defining a heat pipe wick substantially completely and conformally coating the interior and exposed surfaces; and

    inserting dielectric working fluid into the enclosure for intimate contact with all of the interior and exposed surfaces, thereby for minimizing the occurrence of local hot spots on the electronic devices and circuitry and for maximizing heat transfer therefrom to an external heat sink.

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