CMOS voltage comparator with internal hysteresis

• US 4,110,641 A
• Filed: 06/27/1977
• Issued: 08/29/1978
• Est. Priority Date: 06/27/1977
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Payne, Robert L.
• Primary Examiner(s): Anagnos, Larry N.
• Application Number:
  US05/810,226
• Time in Patent Office: 428 Days
• Field of Search: 307/270, 307/279, 307/288, 307/289, 307/290, 307/255, 307/355, 307/356, 307/358, 307/359, 307/360, 307/362, 307/363, 307/364, 330/253, 330/257, 330/264, 330/269, 330/277
• US Class Current: 327/67
• CPC Class Codes: G01R 19/0038 Circuits for comparing several input signals and for indicating the result of this comparison, e.g. equal, different, greater, smaller (comparing pulses or pulse trains according to amplitude)
• CPC Class Codes: H03K 3/3565 Bistables with hysteresis, e.g. Schmitt trigger

Abstract

A CMOS voltage comparator with internal positive current feedback to achieve a predetermined hysteresis. The voltage level at which the switching occurs is precisely settable. Hysteresis is introduced such that when the set voltage level is exceeded, the output switches quickly and will remain in that state until the input voltage drops by a predetermined hysteresis voltage.

Claims

1. A CMOS comparator with internal positive current feedback for generating hysteresis in the switching of the output voltage signal as a function of the input voltage signal, said comparator comprising:

a transconductance amplifier for generating a current through a first insulated gate field effect transistor which is a function of voltage at its input, said first insulated gate field effect transistor having its source connected to a first potential terminal and having its drain connected to a common junction terminal;

a second insulated gate field effect transistor having its source to drain conduction path connected between said common junction terminal and a second potential terminal;

a source of control current;

means for generating a first feedback current as a function of said control current;

an output terminal;

an output inverter comprised of third and fourth insulated gate field effect transistors, said third transistor having its source to drain conductive path connected between said output terminal and said first potential terminal and said fourth transistor having its source to drain conductive path connected between said output terminal and said second potential terminal, said third and fourth transistors further having their gate electrodes connected to said common junction terminal; and

switching means connected to said means for generating said first feedback current and to said output terminal for connecting said first feedback current in parallel with said first transistor as a function of voltage at said output terminal.

2. Apparatus according to claim 1, wherein means are provided for generating a second feedback current as a function of said control current and said switching means is further connected to said means for generating said second feedback current for alternately connecting said first feedback current in parallel with said first transistor and said second feedback current in parallel with said second transistor as a function of voltage at said output terminal.

3. Apparatus according to claim 1, wherein said transconductance amplifier includes a differential transistor pair comprised of fifth and sixth insulated gate field effect transistors having their gate electrodes connected to first and second input terminals, respectively, having their drain electrodes connected to said first potential terminal via seventh and eighth insulated gate field effect transistors, and having their source electrodes connected to each other and to said second potential terminal via a ninth insulated gate field effect transistor.

4. Apparatus according to claim 3, including a first current mirror comprised of said second and ninth transistors, together with tenth and eleventh insulated gate field effect transistors, said tenth insulated gate field effect transistor having its drain electrode connected to said source of control current and to the gate electrodes of said second, ninth, tenth, and eleventh transistors, each of said transistors in said second current mirror further having its source connected to said second potential terminal, whereby the currents conducted by said second, ninth, and eleventh transistors are reflections of the current conducted by said tenth transistor and are thereby a function of said control current.

5. Apparatus according to claim 4, including a second current mirror comprised of said first and eighth insulated gate field effect transistors and a twelfth insulated gate field effect transistor, said first, eighth and twelfth transistors having their gate electrodes connected to each other and to the drain electrode of said eighth transistor, and having their source electrodes connected to said first potential terminal, whereby the currents conducted by said first and twelfth transistors are a reflection of the current conducted by said eighth transistor.

6. Apparatus according to claim 5, wherein said eleventh and twelfth insulated gate field effect transistors represent said means for generating a second feedback current and said means for generating a first feedback current, respectively.

7. Apparatus according to claim 6, wherein said switching means includes thirteenth and fourteenth insulated gate field effect transistors, said thirteenth transistor having its source connected to the drain of said twelfth transistor, having its drain connected to said common junction terminal and having its gate connected to said output terminal and said fourteenth transistor having its source connected to the drain of said eleventh transistor, having its drain connected to said common junction terminal, and having its gate connected to said output terminal.

8. Apparatus according to claim 7, wherein said first, third, seventh, eighth, twelfth and thirteenth insulated gate field effect transistors are of the first polarity type and said second, fourth, fifth, sixth, ninth, tenth, eleventh, and fourteenth insulated gate field effect transistors are of the second polarity type.