Method of modifying the temperature drift of the propagation time of surface elastic waves and a device obtained by said method

• US 4,110,653 A
• Filed: 03/25/1977
• Issued: 08/29/1978
• Est. Priority Date: 03/30/1976
• Status: Expired due to Term

• Current Assignee: Thomson-CSF
• Original Assignee: Thomson-CSF
• Inventors: Hartemann, Pierre
• Primary Examiner(s): Budd, Mark O.
• Application Number:
  US05/781,451
• Time in Patent Office: 522 Days
• Field of Search: 310/313, 310/361, 333/72, 333/30 R, 250/492 A
• US Class Current: 310/313.00A
• CPC Class Codes: H03H 3/10 for obtaining desired frequency or temperature coefficient
• CPC Class Codes: H03H 9/02551 of quartz substrates
• CPC Class Codes: H03H 9/30 Time-delay networks
• CPC Class Codes: H03H 9/42 using surface acoustic waves devices for manipulating acoustic surface waves in general G10K11/36
• CPC Class Codes: H03L 1/028 of generators comprising piezoelectric resonators H03L1/021, H03L1/022 take precedence; oscillation generators with a piezoelectric resonator H03B5/32

Abstract

The present invention relates to the modification of the temperature-induced drift in propagation time of surface elastic waves. The invention proposes to achieve this modification by selecting a suitable crystal cut of the crystalline substrate, and carrying out a localized ion bombardment of the surface at which the elastic waves propagate.

Claims

1. A method of reducing the differences in propagation time of surface elastic waves ascribed to variations in temperature of a crystalline substrate propagating said surface elastic waves, said method comprising the steps of cutting the crystalline substrate in accordance with a predetermined crystal cut, and in subjecting at least one superficial zone of the substrate, located in the trajectory of said waves, to an ion bombardment;

said ion bombardment permanently altering the regular lattice arrangement of the atoms of said crystalline substrate;

the intensity and the extent of said ion bombardment being adjusted for substantially reducing within given temperature and frequency ranges, said differences in propagation time.

2. A method as claimed in claim 1, wherein said temperature range comprises an operating temperature to either side of which said differences have the same sign;

said ion bombardment producing a shift in said operating temperature.

3. A method as claimed in claim 1, wherein said ion bombardment produces over the extent of said zone an inversion of the sign of the thermal drift inherent to the crystalline substrate having said crystal cut.

4. A method as claimed in claim 2, wherein said crystalline substrate is quartz;

said cut being an (ST, X)--cut;

said shift consisting in an increase in said temperature.

5. A method as claimed in claim 2, wherein said crystalline substrate is made of quartz;

said cut being an (X, Z 36°

)--cut.

6. A method as claimed in claim 2, wherein said crystalline substrate is made of quartz;

said cut being an (Y, X, 40°

) cut.

7. An electromechanical surface wave device comprising a crystalline substrate;

a superficial zone of the surface of said substrate being modified by an ion bombardment permanently altering the regular lattice arrangement of the atoms of said crystalline substrate;

said zone being located on the path of said surface wave for causing a modification of the thermal drift of the propagation time of said surface wave along said surface.