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Field-effect transistor with extended linear logarithmic transconductance

  • US 4,112,455 A
  • Filed: 01/27/1977
  • Issued: 09/05/1978
  • Est. Priority Date: 01/27/1977
  • Status: Expired due to Term
First Claim
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1. A field-effect transistor of the type having a source region, a drain region and a channel region within which current flow takes place between said source and drain regionssaid channel region having a length dimension which is uniform and corresponds to the distance over which said current travels as it flows between said source and drain regions of said transistor and having a width dimension which is perpendicular to said length dimension and to the direction along which said current travels as it flows between said source and drain regions,said channel region having a non-linear dopant profile along its width dimension which is such that said field-effect transistor exhibits a logarithmic transconductance which is linear with gate signal voltage over an extended range.

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