Semiconductor manufacturing method using buried nitride formed by a nitridation treatment in the presence of active nitrogen
First Claim
1. A method of manufacturing a semiconductor device, comprising providing a body having a silicon semiconductor surface region covered at least partly with a silicon oxide-containing layer, thereafter subjecting the silicon oxide-covered silicon region to a nitriding heat treatment in an atmosphere containing nitrogen capable of passing through the silicon oxide layer and chemically reacting at the silicon-silicon oxide interface until there is formed at the interface a nitrogen-containing material buried zone of a thickness capable of maintaining desired properties of the silicon portion under the buried zone during subsequent processing, and thereafter subjecting the body to processing which would cause a change in the properties of any silicon portions present which are not covered by the buried zone.
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Abstract
The invention relates to a method of manufacturing a semiconductor device in which a surface of a silicon semiconductor region covered at least partly with a silicon oxide-containing layer is subjected to a nitridation treatment forming a buried zone of a nitrogen-containing material between the silicon oxide layer and the silicon region, which zone is used in a further phase of the manufacture or in the manufactured semiconductor device.
72 Citations
25 Claims
- 1. A method of manufacturing a semiconductor device, comprising providing a body having a silicon semiconductor surface region covered at least partly with a silicon oxide-containing layer, thereafter subjecting the silicon oxide-covered silicon region to a nitriding heat treatment in an atmosphere containing nitrogen capable of passing through the silicon oxide layer and chemically reacting at the silicon-silicon oxide interface until there is formed at the interface a nitrogen-containing material buried zone of a thickness capable of maintaining desired properties of the silicon portion under the buried zone during subsequent processing, and thereafter subjecting the body to processing which would cause a change in the properties of any silicon portions present which are not covered by the buried zone.
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19. A method of manufacturing a semiconductor device, comprising providing a body having a silicon semiconductor surface region covered at least partly with a silicon oxide-containing layer having a thickness exceeding 100 A, thereafter subjecting the silicon oxide-covered silicon region to a chemical treatment in the presence of active nitrogen capable of passing through the silicon oxide layer and chemically reacting with the silicon surface until there is formed between the silicon oxide layer and the silicon region a nitrogen-containing material buried zone having a thickness exceeding 5 A but less than about 50 A, and thereafter utilizing the thusproduced nitrogen-containing buried zone for selectively controlling properties of the silicon surface.
Specification