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Semiconductor manufacturing method using buried nitride formed by a nitridation treatment in the presence of active nitrogen

  • US 4,113,515 A
  • Filed: 03/29/1976
  • Issued: 09/12/1978
  • Est. Priority Date: 06/04/1975
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor device, comprising providing a body having a silicon semiconductor surface region covered at least partly with a silicon oxide-containing layer, thereafter subjecting the silicon oxide-covered silicon region to a nitriding heat treatment in an atmosphere containing nitrogen capable of passing through the silicon oxide layer and chemically reacting at the silicon-silicon oxide interface until there is formed at the interface a nitrogen-containing material buried zone of a thickness capable of maintaining desired properties of the silicon portion under the buried zone during subsequent processing, and thereafter subjecting the body to processing which would cause a change in the properties of any silicon portions present which are not covered by the buried zone.

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