Amorphous silicon photovoltaic device having an insulating layer

• US 4,117,506 A
• Filed: 07/28/1977
• Issued: 09/26/1978
• Est. Priority Date: 07/28/1977
• Status: Expired due to Term

• Current Assignee: RCA Corporation
• Original Assignee: RCA Corporation
• Inventors: Carlson, David E., Wronski, Christopher R.
• Primary Examiner(s): Edlow, Martin H.
• Application Number:
  US05/819,936
• Time in Patent Office: 425 Days
• Field of Search: 357/6, 357/30, 357/23
• US Class Current: 136/255
• CPC Class Codes: H01L 31/062 the potential barriers being only of the metal-insulator-semiconductor type
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

In a photovoltaic semiconductor device, an electrically insulating layer is between and in contact with a body of amorphous silicon fabricated by a glow discharge in silane and a metallic film of a metal capable of forming a surface barrier junction with the amorphous silicon body. The insulating layer is of such a relatively thin thickness that charge carriers are capable of tunneling through the insulating layer. The insulating layer has been found to increase the open circuit voltage of the photovoltaic device without adversely affecting the short circuit current density of the device.

Claims

1. A photovoltaic semiconductor device comprising:

a body of amorphous silicon fabricated by a glow discharge in silane, SiH₄ ;

a layer of an electrically insulating material on a surface of said body, said insulating layer being of a thickness such that charge carriers are capable of tunneling through said layer; and

a metallic layer on a surface of said insulating layer opposite said body.

2. The photovoltaic semiconductor device in accordance with claim 1 wherein said insulating layer is an oxide.

3. The photovoltaic semiconductor device in accordance with claim 1 wherein said insulating layer is a nitride.

4. The photovoltaic semiconductor device in accordance with claim 1 wherein the insulating layer is of a thickness in the range of 10 to 50 angstroms.

5. The photovoltaic semiconductor device in accordance with claim 1 wherein the insulating layer is about 20 angstroms in thickness.

6. The photovoltaic semiconductor device in accordance with claim 1 wherein said body comprises a first layer of doped amorphous silicon fabricated by a glow discharge in a mixture of silane and a doping gas and a second layer of amorphous silicon fabricated by a glow discharge in silane contiguous to said first layer, said second layer being contiguous to said insulating layer opposite said first layer.

7. The photovoltaic semiconductor device in accordance with claim 1 wherein said entire body comprises an amorphous silicon fabricated by a glow discharge in substantially pure silane.

8. A photovoltaic semiconductor device comprising:

an electrically conductive substrate;

a body of amorphous silicon fabricated by a glow discharge in silane, SiH₄, being on said substrate;

a layer of an electrically insulating material on a surface of said body opposite said substrate, said insulating layer being of a thickness such that charge carriers are capable of tunneling through said insulating layer;

a metallic layer on a surface of said insulating layer opposite said body;

an electrode on portions of the surface of the metallic film opposite said insulating layer; and

an antireflection layer on said electrode and on the portion of the surface of said metallic film not occupied by said electrode.