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Cartridge and furnace for crystal growth

  • US 4,118,197 A
  • Filed: 01/24/1977
  • Issued: 10/03/1978
  • Est. Priority Date: 01/24/1977
  • Status: Expired due to Term
First Claim
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1. Apparatus for growing a silicon ribbon-type crystal from a melt comprising:

  • a furnace having (1) a chamber with a top aperture leading to the interior of said chamber, (2) means within said chamber for supporting therein a crucible containing a melt from which a crystal is to be grown so that the melt in the crucible will be in line with the aperture, and (3) means for heating a crucible supported within said chamber by said supporting means; and

    at least one cartridge which is arranged to be moved into and out of said furnace through said top aperture, said cartridge being a unitary assembly comprising (1) a capillary die adapted to be used to provide a growth pool of melt from which a crystal can be pulled, (2) solid vertically elongate heat-conducting means disposed above said die and arranged so as to extend on opposite sides of and control the thermal gradient lengthwise in a ribbon-type crystal which is pulled from said growth pool of melt and (3) means holding said heat-conducting means in a fixed relation to said die;

    means for moving the cartridge vertically into and out of said chamber via said aperture and for positioning the cartridge within said chamber so as to place said die in communicating relation with a melt contained by said crucible, said means for moving the cartridge including guide means for guiding said cartridge during its vertical movement into and out of said chamber; and

    a pulling mechanism disposed above the furnace for pulling a crystal from said growth pool of melt past said heat-conducting means and out of said furnace via said aperture.

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