Method for forming a guarded Schottky barrier diode by ion-implantation
First Claim
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1. A method for forming on a semiconductor substrate portion of first conductivity type a metal-semiconductor diode surrounded directly by a doped-guard ring of second conductivity-type and further surrounded directly by an insulating layer on said substrate, comprising ion-implanting said substrate through said insulating layer using said metal as a mask.
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Abstract
An improved method for forming a guard ring Schottky barrier diode using ion implantation. Diodes formed in accordance with this method require less area but exhibit breakdown voltage comparable to known prior art guarded Schottky barrier diodes. The method is especially applicable to the fabrication of monolithic integrated circuits.
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7 Claims
- 1. A method for forming on a semiconductor substrate portion of first conductivity type a metal-semiconductor diode surrounded directly by a doped-guard ring of second conductivity-type and further surrounded directly by an insulating layer on said substrate, comprising ion-implanting said substrate through said insulating layer using said metal as a mask.
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6. A method for forming a guarded Schottky barrier diode on a semiconductor substrate covered by an insulator comprising:
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forming a first aperture in said insulating layer; forming a metal semiconductor diode coextensive with said aperture; forming a masking layer over said insulator; providing a second aperture in said masking layer, said second aperture being an oversize replica of said first aperture; and doping said substrate through second aperture and said insulating layer to provide a junction guard ring surrounding said metal-semiconductor diode. - View Dependent Claims (7)
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