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Application of field-assisted bonding to the mass production of silicon type pressure transducers

  • US 4,121,334 A
  • Filed: 01/14/1977
  • Issued: 10/24/1978
  • Est. Priority Date: 12/17/1974
  • Status: Expired due to Term
First Claim
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1. In a method of making a structure containing a plurality of pressure transducers and adapted to be separated into individual pressure transducers, the steps comprising providing a diaphragm comprising a slice of semiconductor containing material having first and second surfaces with a plurality of diffused circuits on said first surface of the slice and a slice of glass containing material having a plurality of cavities formed on one surface and having a substantially equal coefficient of thermal expansion with the semiconductor containing material, and joining the slice of semiconductor containing material at said second surface by field assisted bonding to the slice of glass containing material so as to close the cavities in the slice of glass containing material.

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