Application of field-assisted bonding to the mass production of silicon type pressure transducers
First Claim
1. In a method of making a structure containing a plurality of pressure transducers and adapted to be separated into individual pressure transducers, the steps comprising providing a diaphragm comprising a slice of semiconductor containing material having first and second surfaces with a plurality of diffused circuits on said first surface of the slice and a slice of glass containing material having a plurality of cavities formed on one surface and having a substantially equal coefficient of thermal expansion with the semiconductor containing material, and joining the slice of semiconductor containing material at said second surface by field assisted bonding to the slice of glass containing material so as to close the cavities in the slice of glass containing material.
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Abstract
A method for mass producing silicon type pressure transducers and transducers resultant therefrom are disclosed. In the method, the major components of a plurality of transducers are simultaneously joined together by a field-assisted bonding technique which allows the components to be made of materials having an approximate match in coefficients of thermal expansion and therefore imparts improved performance characteristics to the individual transducers during operation. This method of mass production of transducers reduces the amount of operational steps and significantly reduces the amount of time and labor required for manufacture.
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Citations
3 Claims
- 1. In a method of making a structure containing a plurality of pressure transducers and adapted to be separated into individual pressure transducers, the steps comprising providing a diaphragm comprising a slice of semiconductor containing material having first and second surfaces with a plurality of diffused circuits on said first surface of the slice and a slice of glass containing material having a plurality of cavities formed on one surface and having a substantially equal coefficient of thermal expansion with the semiconductor containing material, and joining the slice of semiconductor containing material at said second surface by field assisted bonding to the slice of glass containing material so as to close the cavities in the slice of glass containing material.
Specification