Contrast enhancement of electron beam alignment marks

• US 4,123,661 A
• Filed: 04/08/1977
• Issued: 10/31/1978
• Est. Priority Date: 08/04/1975
• Status: Expired due to Term

• Current Assignee: Hughes Aircraft Company (Rtx Corporation)
• Original Assignee: Hughes Aircraft Company (Rtx Corporation)
• Inventors: Wolf, Edward D., Perkins, Walter E. Jr.
• Primary Examiner(s): Anderson, Bruce C.
• Application Number:
  US05/785,801
• Time in Patent Office: 571 Days
• Field of Search: 250/492 A, 250/397, 250/398
• US Class Current: 250/492.1
• CPC Class Codes: H01J 37/3045 Object or beam position registration
• CPC Class Codes: H01L 2223/54453 for use prior to dicing
• CPC Class Codes: H01L 23/544 Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

High atomic number metals or compounds are used as electron beam registration alignment marks on low atomic number substrates; this combination produces enhanced secondary and backscattered electron video signals over topographical alignment marks of homogeneous materials. To augment the enhanced signal contrast, pairs of alignment marks are placed very close together (less than or equal to 3 micrometers), from which the gap between the pair produces the augmented, enhanced signal contrast. In particular, the backscattered electron signal is enhanced when detected with an energy sensitive collector such as a silicon diode detector.

Claims

1. Instrumentality for obtaining alignment in fabricating microcircuit devices including:

a microcircuit workpiece and means permanently placed thereon for defining a pair of alignment marks, said workpiece comprising matter whose atomic number is lower than that of said alignment marks means for enhancing contrast therebetween of backscattered electron video signals obtained from directing an electron beam at said workpiece, and said alignment marks means having a close spacing from one another for augmenting the enhanced contrast as a direct result of the close spacing between said alignment marks means.

2. Instrumentality as in claim 1 wherein said close spacing is less than or equal to 3 micrometers.

3. Instrumentality as in claim 2 wherein said workpiece comprises a substrate.

4. Instrumentality as in claim 3 further comprising marking material on said substrate and over said alignment marks means.

5. Instrumentality as in claim 2 wherein said workpiece is selected from the group consisting of silicon, gallium arsenide and germanium and said alignment marks are selected from the group consisting of tantalum, tungsten, rhenium, osmium, iridium, platinum, gold and thallium for providing the contrast.

6. Instrumentality as in claim 2 wherein said workpiece comprises a doped silicon substrate and said alignment marks comprise iridium thereon, and further including respective layers of silicon dioxide and aluminum on and over said substrate and said iridium.

7. Instrumentality as in claim 2 wherein said workpiece comprises a low atomic number substrate and said alignment marks comprise a higher atomic number metal or compound for producing enhanced backscattered video signals.

8. A method for obtaining alignment for fabricating microcircuit devices comprising the steps of providing means permanently placed on a microcircuit workpiece for defining a pair of alignment marks of atomic number higher than that of the workpiece, closely spacing the alignment marks one from the other, directing an electron beam at the workpiece and the alignment marks for obtaining secondary and backscattered electrons therefrom, and converting the secondary and backscattered electrons into observable signals, the difference between the atomic number of the workpiece and the alignment marks being sufficient for enhancing augmented contrast between the signals, and the close spacing between the alignment marks increasing the enhanced contrast.

9. A method as in claim 8 in which the close spacing is less than or equal to 3 micrometers.

10. A method for enhancing contrast of backscattered electrons from a microcircuit substrate and a pair of alignment marks permanently placed thereon comprising the steps of using materials respectively having low and high atomic numbers for the substrate and the alignment marks, respectively for enhancing video signals from the backscattered electrons, and closely spacing said alignment marks from one another with a gap of ≦

3μ

m for augmenting the enhanced contrast and suppressed video signals.