Stress sensor apparatus

• US 4,125,820 A
• Filed: 09/20/1976
• Issued: 11/14/1978
• Est. Priority Date: 10/06/1975
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Marshall, James F.
• Primary Examiner(s): Albritton, C. L.
• Application Number:
  US05/724,827
• Time in Patent Office: 785 Days
• Field of Search: 338/2-5, 338/42, 73/88.5 SD, 73/398 AR, 357/26, 29/610 SG, 29/580
• US Class Current: 338/4
• CPC Class Codes: G01L 1/2293 of the semi-conductor type semi-conductor devices controllable by variations of applied mechanical force H01L29/84
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm
• CPC Class Codes: H01L 29/84 controllable by variation of applied mechanical force, e.g. of pressure
• CPC Class Codes: H04R 23/006 using solid state devices solid state devices per se H01L

Abstract

Semiconductor material stress sensors are provided where the sensing resistors therein have good electrical stability while being sufficiently protected without degrading sensor performance. This is accomplished through control of the locations of the maximum concentrations of the resistor dopant. The mounting of semiconductor stress sensors on mounts of a different material type in a manner minimizing offset temperature shifts is disclosed.

Claims

1. A stress sensing unit comprising:

a semiconductor material stress sensor having a first surface, said stress sensor having structural portions including substantially in a crystalline relationship a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof with said diaphragm portion being formed by a recess in said semiconductor material stress sensor which opens onto said first surface resulting in an outline of said recess in said first surface where said first surface is formed by said constraint portions; and

a mounting structure of a material of another kind from that in said semiconductor material stress sensor, said mounting structure being bonded to said semiconductor material stress sensor at bonded surfaces in said first surface contained within a closed surface band in turn contained within said first surface to thereby form a bond, said surface band having an inner outline everywhere substantially equidistant from said recess outline and having an outer outline also everywhere substantially equidistant from said recess outline with said inner and outer outlines being separated just enough to include that bonded surface portion having maximum extent perpendicular to said inner and outer outlines.

2. The apparatus of claim 1 wherein said material of said mounting structure, just beyond any deformation at said bond due to said bonding, extends beyond said surface band, to an extent in a direction parallel to said first surface, on both sides of said surface band.

3. The apparatus of claim 1 wherein said material of said mounting structure, except for any deformation of said bond due to bonding, extends beyond said surface band, to an extent in a direction parallel to said first surface, on only one side of said surface band.

4. The apparatus of claim 1 wherein said material of said mounting structure, except for any deformation of said bond due to bonding, extends, in a direction parallel to said first surface, only within said surface band.

5. The apparatus of claim 1 wherein said surface band is in a location in said first surface such that said sensor unit has a smaller offset shift than it would have were said surface band to be located in said first surface immediately adjacent on either side of said location insofar as construction of said stress sensor would permit.

6. The apparatus of claim 1 wherein said surface band is in a location in said first surface such that said stress sensor unit has approximately its smallest offset shift.

7. The apparatus of claim 1 wherein said first surface is non-planar.

8. The apparatus of claim 2 wherein said first surface is non-planar.

9. The apparatus of claim 2 wherein said mounting structure has a boss on a surface thereof, where said boss is shaped to match said surface band, with said boss bonded to said surface band.

10. The apparatus of claim 2 wherein said semiconductor material stress sensor is confined to at least being approximately within said outer outline.

11. The apparatus of claim 3 wherein said first surface is non-planar.

12. The apparatus of claim 3 wherein said mounting structure has a boss on a surface thereof, where said boss is shaped to match said surface band, with said boss bonded to said surface band.

13. The apparatus of claim 3 wherein said semiconductor material stress sensor is confined to at least being approximately within said outer outline.

14. The apparatus of claim 3 wherein said mounting structure is beveled at some locations just beyond any deformation occurring at said bond due to bonding.

15. The apparatus of claim 4 wherein said first surface is non-planar.

16. The apparatus of claim 2 wherein said mounting structure is beveled at some locations just beyond any deformation occurring at said bond due to bonding.

17. The apparatus of claim 7 wherein said first surface has a peak in said surface band.

18. The apparatus of claim 7 wherein said first surface slopes inwardly from its outer boundary to said recess outline.

19. The apparatus of claim 10 wherein said outer outline forms a boundary of said semiconductor material stress sensor.

20. The apparatus of claim 13 wherein said outer outline forms a boundary of said semiconductor material stress sensor.

21. The apparatus of claim 14 wherein said mounting structure has a boss on a surface thereof, where said boss is shaped to match said surface band, with said boss bonded to said surface band.

22. The apparatus of claim 4 wherein said outer outline forms a boundary of said semiconductor material stress sensor.

23. The apparatus of claim 16 wherein said mounting structure has a boss on a surface thereof, where said boss is shaped to match said surface band, with said boss bonded to said surface band.

38. The apparatus of claim 8 wherein said first surface has a peak in said surface band.

24. A stress sensing unit comprising:

A semiconductor material stress sensor having a first surface, said stress sensor having structural portions including substantially a diaphragm and a constraint for constraining said diaphragm at peripheral portions thereof with said diaphragm portion being formed by a recess in said semiconductor material stress sensor which opens onto said first surface resulting in an outline of said recess in said first surface where said first surface is formed by said constraint portions; and

a mounting structure of a material of another kind from that in said semiconductor material stress sensor, said mounting structure being bonded to said semiconductor material stress sensor at bonded surfaces in said first surface contained within a closed surface band in turn contained within said first surface to thereby form a bond, said surface band having an inner outline everywhere substantially equidistant from said recess outline and having an outer outline also everywhere substantially equidistant from said recess outline with said inner and outer outlines being separated just enough to include that bonded surface portion having maximum extent perpendicular to said inner and outer outlines and said surface band being in a location in said first surface such that said stress sensing unit has approximately its smallest offset shift with temperature.

25. The apparatus of claim 24 wherein said material of said mounting structure, just beyond any deformation at said bond due to said bonding, extends beyond said surface band, to an extent in a direction parallel to said first surface, on both sides of said surface band.

26. The apparatus of claim 24 wherein said material of said mounting structure, except for any deformation of said bond due to bonding, extends beyond said surface band, to an extent in a direction parallel to said first surface, on only one side of said surface band.

27. The apparatus of claim 24 wherein said material of said mounting structure, except for any deformation of said bond due to bonding, extends, in a direction parallel to said first surface, only within said surface band.

28. The apparatus of claim 24 wherein said first surface is non-planar.

29. The apparatus of claim 25 wherein said first surface is non-planar.

30. The apparatus of claim 25 wherein said mounting structure has a boss on a surface thereof, where said boss is shaped to match said surface band, with said boss bonded to said surface band.

31. The apparatus of claim 25 wherein said semiconductor material stress sensor is confined to at least being approximately within said outer outline.

32. The apparatus of claim 26 wherein said first surface is non-planar.

33. The apparatus of claim 26 wherein said mounting structure has a boss on a surface thereof, where said boss is shaped to match said surface band, with said boss bonded to said surface band.

34. The apparatus of claim 26 wherein said semiconductor material stress sensor is confined to at least being approximately within said outer outline.

35. The apparatus of claim 26 wherein said mounting structure is beveled at some locations just beyond any deformation occurring at said bond due to bonding.

36. The apparatus of claim 27 wherein said first surface is non-planar.

37. The apparatus of claim 25 wherein said mounting structure is beveled at some locations just beyond any deformation occurring at said bond due to bonding.

39. The apparatus of claim 28 wherein said first surface slopes inwardly from its outer boundary to said recess outline.

40. The apparatus of claim 31 wherein said outer outline forms a boundary of said semiconductor material stress sensor.

41. The apparatus of claim 34 wherein said outer outline forms a boundary of said semiconductor material stress sensor.

42. The apparatus of claim 35 wherein said mounting structure has a boss on a surface thereof, where said boss is shaped to match said surface band, with said boss bonded to said surface band.

43. The apparatus of claim 27 wherein said outer outline forms a boundary of said semiconductor material stress sensor.

44. The apparatus of claim 37 wherein said mounting structure has a boss on a surface thereof, where said boss is shaped to match said surface band, with said boss bonded to said surface band.