Symmetrical cell layout for static RAM

• US 4,125,854 A
• Filed: 12/02/1976
• Issued: 11/14/1978
• Est. Priority Date: 12/02/1976
• Status: Expired due to Term

• Current Assignee: SGS-Thomson Microelectronics (STMicroelectronics NV)
• Original Assignee: Mostek Corporation (Raytheon Technologies Corporation d/b/a RTX)
• Inventors: Chan, Tsiu C., McKenny, Vernon G.
• Primary Examiner(s): Edlow, Martin H.
• Application Number:
  US05/746,665
• Time in Patent Office: 712 Days
• Field of Search: 357/41, 357/45, 357/59, 307/303, 307/304, 307/238, 340/173 CA, 340/173 TC, 340/173 R, 365/174, 365/182
• US Class Current: 257/379
• CPC Class Codes: G11C 11/412 using field-effect transistors only
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H10B 10/00 Static random access memory [SRAM] devices
• CPC Class Codes: H10B 10/15 comprising a resistor load element
• CPC Class Codes: Y10S 148/082 Ion implantation FETs/COMs

Abstract

A symmetrical structural layout for the principal components of each cell in a group of four mutually contiguous cells of an array of memory cells is disclosed. A common drain supply node is centrally disposed within the group and is coincident with the intersection of first and second mutually perpendicular axes of symmetry. Corresponding components of contiguous cells in each row and column are symmetrically disposed with respect to each of the first and second axes of symmetry. In a preferred embodiment, the principal components of each cell include a plurality of insulated gate field-effect transistors each having a source diffusion region and a drain diffusion region formed within the substrate and a plurality of impedance devices electrically connecting the common drain supply node to the drain diffusions of the transistors in each cell. The impedance devices extend radially from the common drain supply node into the interior of each cell, and at least one of the diffused regions of each transistor in each cell is formed in common with a diffused region of a transistor of a contiguous cell.

Claims

1. An integrated circuit memory comprising:

a substrate of semiconductor material of a first conductivity type;

an array of memory cells fabricated on the substrate in rows and columns;

each cell of the array including first and second data storage transistors, first and second enabling transistors, and first and second impedance devices, each of the transistors having a gate, a source diffusion region, and a drain diffusion region formed in the substrate;

the gate of the second data storage transistor being electrically connected to the drain diffusion of the first data storage transistor, to the drain diffusion of the first enabling transistor, and to the first impedance device thereby defining a first data node in each cell of the array;

the gate of the first data storage transistor being electrically connected to the drain diffusion of the second data storage transistor, to the drain diffusion of the second enabling transistor, and to the second impedance device thereby defining a second data node in each cell of the array;

the drain diffusion of the first data storage transistor being formed in common with the drain diffusion of the first enabling transistor of each cell of the array;

the array including a first group of four of the cells disposed in mutual contiguous relation to each other in a first row and in a second row adjacent to the first row, and in a first column and in a second column adjacent to the first column,

the source diffusions of the second data storage transistors of contiguous cells in the first and second rows of the first group being formed in common, respectively; and

,

the first and second impedance devices of each cell of the first group being electrically connected together to form a drain supply node common to each cell of the group.

2. The integrated circuit memory as defined in claim 1 wherein the common drain supply node is disposed substantially in the geometrical center of the first group of cells, the first and second impedance devices of each cell extending radially from the common drain supply node to the interior of the cell.

3. The integrated circuit memory as defined in claim 2 wherein each of the first and second impedance means of each cell is formed as an integral portion of a polycrystalline silicon strip which interconnects the common drain supply node to the corresponding first and second data nodes, respectively, each impedance means including a body of substantially pure polycrystalline silicon defining a first conductive path and a diffusion of impurities of the opposite conductivity type disposed within a region of the body defining a second conductive path, a diffused-nondiffused junction being defined by the interface of the diffused region with the substantially pure polycrystalline silicon body, the first and second paths defining a series electrical path from the common drain supply node to the corresponding data node.

4. The integrated circuit memory as defined in claim 1, the array including an additional group of four mutually contiguous cells identical to the first group contiguously disposed in the first and second rows and in the first and second columns on each side of the first group;

the source diffusions of the first and second enabling transistors of each cell in the first and second columns and first row of the first group being formed in common with the source diffusions of the first and second enabling transistors of corresponding cells of the contiguous group of cells disposed in the first and second columns and in the row immediately preceding the first row;

the source diffusion of the first and second enabling transistors of each cell in the first and second columns and second row of the first group being formed in common with the source diffusions of the first and second enabling transistors of corresponding cells of the contiguous group of cells disposed in the first and second columns and in the row immediately succeeding the second row;

the source diffusions of the first data storage transistors of the adjacent cells of the first group disposed in the first and second rows and in the first column being formed in common, respectively, with the source diffusions of the first data storage transistors of corresponding cells of the contiguous group of cells disposed in the first and second rows and in the column immediately preceding the first column of the first group;

the source diffusions of the first data storage transistors of the adjacent cells of the first group disposed in the first and second rows and in the second column being formed in common, respectively, with the source diffusions of the first data storage transistors of corresponding cells of the contiguous group of cells disposed in the first and second rows and in the column immediately succeeding the second column of the first group;

the gates of the first and second transistors of each cell of the first group disposed in the first row being formed in common with each other and with the gates of the corresponding enabling transistors disposed in the first row of the contiguous groups immediately preceding and succeeding the first group thereby defining a first row address line common to each cell in the first row of the array; and

,

the gates of the first and second enabling transistors of each cell of the first group disposed in the second row being formed in common with each other and with the gates of the corresponding enabling transistors disposed in the second row of the contiguous groups immediately preceding and succeeding the first group thereby defining a second row address line common to each cell in the second row of the array.

5. The integrated circuit memory as defined in claim 4 including:

a first conductive strip extending transversely with respect to the common row address lines across each row of cells, the first conductive strip being electrically connected to the common source diffusions of the first data storage transistors disposed in adjacent columns of contiguous groups thereby defining a first source supply line for each pair of contiguous columns of groups,

a second conductive strip extending transversely with respect to the common row address lines across each row of cells, the second conductive strip being electrically connected to the common source diffusions of the second data storage transistors in each group thereby defining a second source supply line for each column of groups;

a third conductive strip extending transversely with respect to the common row address lines across each row of cells, the third conductive strip being electrically connected to the common drain supply node of each group in a column thereby defining a common drain supply line for each column of groups;

a fourth conductive strip extending transversely with respect to the common row address lines across each row of cells, the fourth conductive strip being electrically connected to the first data node of each cell of each column thereby defining a first data output line common to each cell of each column; and

,

a fifth conductive strip extending transversely with respect to the common row address lines across each row of cells, the fifth conductive strip being electrically connected to the second data node of each cell of each column thereby defining a second data output line common to each cell of each column.

6. In an integrated circuit memory of the type including an array of memory cells fabricated on a semiconductor subtrate in rows and columns, each cell including principal components interconnected to store bits of binary data, an improved structural layout for the principal components of each cell in a group of four mutually contiguous cells of the array comprising:

a common drain supply node disposed substantially in the geometrical center of the group as defined by the intersection of a first centerline axis and a second centerline axis disposed substantially perpendicular to the first axis; and

,

corresponding component of contiguous cells in each row of the group being symmetrically disposed with respect to each of the first and second axes.

7. The combination as defined in claim 6 wherein each cell includes as principal components a plurality of insulated gate field-effect transistors each having a source diffusion and a drain diffusion formed in the substrate, at least one of the diffused regions of each transistor being formed in common with a diffused region of another transistor of a contiguous cell.

8. The combination as defined in claim 7, including first and second insulated gate field-effect data storage transistors and first and second insulated gate field-effect enabling transistors, the source diffusions of the first data storage transistors of column contiguous cells being formed in common, the source diffusions of the second data storage transistors of row contiguous cells being formed in common, and the drain diffusions of the first data storage transistor and the first enabling transistor being formed in common in each cell.

9. The combination as defined in claim 8, wherein the gate of the first data storage transistor is electrically connected to the drain diffusion of the second enabling transistor and to the drain diffusion of the second data storage transistor thereby defining a first data node, the gate of the second data storage transistor being electrically connected to the drain diffusion of the first enabling transistor and to the drain diffusion of the first data storage transistor thereby defining a second data node, the combination further including first and second impedance devices in each cell of the group of four mutually contiguous cells, each of the impedance devices electrically connecting the common drain supply node to the first and second data nodes, respectively, of each cell.

10. The combination as defined in claim 9 wherein each impedance device extends radially from the common drain supply node, at least one impedance device of each cell being angularly displaced with respect to each of the axes by an angle measuring less than a right angle.

11. An integrated circuit memory comprising:

a substrate of semiconductor material doped with impurities of a first conductivity type;

an array of memory cells fabricated on the substrate in input rows and output columns;

the substrate within each cell of the array including first and second pairs of active surface areas surrounded by a substrate field area, the first pair being the situs of first and second data storage transistors, and the second pair being the situs of first and second enabling transistors;

a strip of gate insulating material disposed over a portion of each active situs area;

a diffusion of impurities of the opposite conductivity type disposed in the substrate beneath each active surface area on either side of the gate insulating strip thereby forming source and drain diffusion regions for each transistor, a nondiffused channel region being defined in the active substrate area beneath the gate insulating strip and between the source and drain diffusion regions, the source and drain diffusion regions of each transistor extending through the surrounding field regions of the substrate for predetermined distances;

a first layer of electrical insulating material being disposed over the substrate field area of each cell and around but not over the active situs areas of each cell;

a conductive gate strip deposited on each gate insulating strip, the conductive gate strips extending transversely with respect to the associated source and drain regions and across the surrounding field insulation;

the conductive gate strips of the first and second enabling transistors of each cell of each input row being formed in common thereby defining a common row address line for each input row;

the source diffusions of the first and second enabling transistors of each cell in a selected row being formed in common with the source diffusions of the first and second enabling transistors of contiguous cells of an adjacent row respectively;

the conductive gate strips of the first and second data storage transistors of each cell extending transversely with respect to the associated diffused source and drain regions across the field insulation and being disposed in electrical contact with the drain diffusions of the second and first enabling transistors, respectively, and in electrical contact with the drain diffusions of the second and first data storage transistors of the same cell, respectively;

first and second impedance means each having a first and second terminal portion, the first terminal portion being electrically connected to the drain diffusions of the first and second data storage transistors of each cell, respectively, thereby defining a first and second data node in each cell, the second terminal portions of the impedance means in each cell of a first group of four mutually contiguous cells being electrically connected together to define a common drain supply node;

the source diffusions of the first data storage transistors of each cell in a second group of four mutually contiguous cells being formed in common thereby defining a first common source supply node, the cells of the second group being disposed in the adjacent rows in which the cells of the first group are disposed, one cell in each row being common to each of the first and second selected groups;

the drain diffusion of the first data storage transistor of each cell being formed in common with the drain diffusion of the first enabling transistor of each cell;

the source diffusion of the second data storage transistor of each cell being formed in common with the source diffusion of the second data storage transistor disposed in the contiguous cell of the same row and adjacent column thereby defining a second source supply node;

a second insulating layer deposited over the first insulating layer, the row address line, gates strips and impedance devices;

a first conductive strip deposited over the second insulating layer and extending transversely with respect to the row address lines across each row of cells, the first conductive strip being electrically connected to each of the first common source supply nodes defined by a plurality of the second groups, the mutually contiguous cells of each of the second groups being disposed in adjacent columns, thereby defining a first source supply line common to each cell in adjacent columns containing the second groups;

a second conductive strip deposited over the second insulating layer and extending across each row of cells substantially parallel to the first conductive strip, the second conductive strip being electrically connected to the common source diffusions of first enabling transistors of contiguous cells in the column thereby defining a common data output line for each of the cells in the column;

a third conductive strip deposited over the second insulating layer and extending across each row of cells substantially parallel to the second conductive strip, the second conductive strip being electrically connected to each of the second data nodes of each cell in the column thereby defining a common data complement output line for each of the cells in the column;

a fourth conductive strip deposited over the second insulating layer and extending across each row of cells of the array and substantially parallel to the third conductive strip, the fourth conductive strip being electrically connected to each of the second source supply nodes of each cell in the column thereby defining a second source supply line common to each cell in the column; and

,

a fifth conductive strip deposited over the second insulating layer and extending across each row of cells in the column, the fifth conductive strip being electrically connected to each of the common source supply nodes defined by a plurality of the first groups of cells, the mutually contiguous cells of each of the first selected groups being disposed inadjacent pairs of columns, thereby defining a drain supply line common to each cell in adjacent columns containing the first selected groups.