Volatile/non-volatile logic latch circuit

• US 4,132,904 A
• Filed: 07/28/1977
• Issued: 01/02/1979
• Est. Priority Date: 07/28/1977
• Status: Expired due to Term

• Current Assignee: Hughes Aircraft Company (Rtx Corporation)
• Original Assignee: Hughes Aircraft Company (Rtx Corporation)
• Inventors: Harari, Eliyahou
• Primary Examiner(s): Anagnos, Larry N.
• Application Number:
  US05/819,794
• Time in Patent Office: 523 Days
• Field of Search: 307/238, 307/279, 307/288, 307/291, 307/200 B, 365/154, 365/156, 365/181, 365/184, 365/185, 365/228
• US Class Current: 365/185.07
• CPC Class Codes: G11C 14/00 Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
• CPC Class Codes: H01L 29/7883 charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
• CPC Class Codes: H03K 3/356008 ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails digital storage cells each combining volatile and non-volatile storage properties G11C14/00
• CPC Class Codes: H10B 10/00 Static random access memory [SRAM] devices
• CPC Class Codes: H10B 10/12 comprising a MOSFET load element
• CPC Class Codes: H10B 10/15 comprising a resistor load element

Abstract

There is described a logic element employing fixed threshold and variable threshold transistors electrically connected together in a unique manner to form a latch. The latch can be made to retain data by keeping certain internal nodes at a high or low voltage level. As such it acts as an ordinary semiconductor memory latch, whose data can be changed by externally overriding the internal voltage levels of the latch cell. The novel results of the cell described are achieved by replacing one or several of the transistors in the latch by specially constructed transistors, whose threshold voltage can be raised or lowered upon application of a relatively high voltage pulse between their gate and substrate. By application of such a high voltage pulse, the data stored in the latch can be translated into controlled threshold shifts of the variable threshold transistors, which uniquely represent the initial latch state. Therefore, if power is removed and then returned, the latch will always settle into a state dictated by the final state that existed in the latch before the high voltage pulse was applied. In this way the variable threshold elements of the latch cell make it a non-volatile memory element. It can be used either as a read/write memory, using its latch property, or as a read-only memory, using the variable threshold transistors to cause it to always latch in a predetermined manner.

Claims

1. A bistable latch circuit having a pair of branches connected across a common supply voltage, each branch including a load and a driver connected in series at a respective node, either the load or the driver, or both, in each said branch comprising an IGFET having its source-to-drain circuit connected in said branch and its control gate cross-connected to the node of the other branch so that, when a respective one of said IGFETs is turned on, the potential between said nodes rises toward said supply voltage, the relative potentials of said nodes reflecting the particular IFGET so turned on, thereby rendering said circuit bistable for volatile information storage, characterized by at least one of said cross-connected IGFETs having a variable threshold voltage, said threshold voltage being varied by raising its gate potential above a predetermined level relative to the potential on one of its other electrodes, whereby the volatile information stored in said latch by placing it in one of its stable states may be rendered non-volatile by raising said supply voltage above said predetermined level.

2. The latch circuit of claim 1 characterized further in that said at least one cross-connected IGFET'"'"'s threshold voltage is varied by raising its gate-to-drain potential above a predetermined level.

3. The latch circuit of claim 1 characterized further by means for temporarily raising said supply voltage across said branches to a sufficiently high level to vary the threshold voltage of said at least one cross-connected IGFET.

4. The latch circuit of claim 1 characterized further in that (1) the driver in each branch comprises an IGFET having its source-to-drain circuit connected in said branch and its control gate cross-connected to the node of the other branch and (2) said IGFET drivers have oppositely variable thresholds so that raising said supply voltage above said predetermined level causes opposite threshold shifts in said IGFET drivers.

5. The circuit of claim 4 characterized further by the addition, in each of said branch, of an IGFET having its source-to-drain circuit connected in series with the source-to-drain circuit of the IGFET driver in said branch and its gate connected to the control gate of the IGFET driver in said branch.

6. The latch circuit of claim 1 characterized further in that (1) the load in each branch comprises an IGFET having its source-to-drain circuit connected in said branch and its control gate cross-connected to the node of the other branch and (2) said IGFET loads have oppositely variable thresholds so that raising said supply voltage above said predetermined level causes opposite threshold shifts in said IGFET loads.

7. The circuit of claim 6 characterized further by the addition, in each said branch, of an IGFET having its source-to-drain circuit connected in series with the source-to-drain circuit of the IGFET load in said branch and its gate connected to the control gate of the IGFET load in said branch.

8. The latch circuit of claim 1 characterized further in that (1) said cross-connected IGFETs are the drivers of the respective branches and (2) only one of said drivers has a variable threshold voltage, said threshold voltage being variable over a range which includes the threshold voltage of the other IGFET driver.

9. The circuit of claim 8 characterized further by the addition of an IGFET having its source-to-drain circuit connected in series with the source-to-drain circuit of the variable threshold IGFET driver, the control gate of the latter being connected to the gate of the said additional IGFET, the threshold of said additional IGFET being lower than that of the fixed threshold IGFET driver.

10. The latch circuit of claim 1 characterized further in that (1) said cross-connected IGFETs are the loads of the respective branches and (2) only one of said loads has a variable threshold voltage, said threshold voltage being variable over a range which includes the threshold of the other IGFET load.

11. The circuit of claim 10 characterized further by an additional IGFET having its source-to-drain circuit connected in series with the source-to-drain circuit of the variable threshold IGFET load, the control gate of the variable threshold IGFET load being connected to the gate of the said additional IGFET, the threshold of said additional IGFET being lower than that of the fixed threshold IGFET load.

12. The circuit of claim 1 characterized further in that said at least one IGFET has a floating gate with a thin oxide area at least partially over the node to which said IGFET is connected and having a control gate capacitively coupled to said floating gate.

13. The circuit of claim 12 characterized further by:

(a) means for normally maintaining a first voltage across said pair of branches which is below that required to cause tunneling across the thin oxide area of said at least one IGFET;

(b) means for turning on a selected one of said IGFETs so as to store information in said latch circuit in volatile form; and

(c) means for temporarily raising the voltage across said pair of branches to a second, higher level which is sufficient to induce tunneling across said thin oxide area so as to cause a long therm shift in the threshold of said at least one IGFET.

14. The circuit of claim 13 characterized further in that (1) said cross-connected IFGETs are the drivers of the respective branches and (2) both said IGFET drivers have floating gates with a thin oxide area over the nodes to which respective ones of them are connected, so that temporarily raising the voltage to said second level causes opposite threshold shifts in said IGFET drivers.

15. The circuit of claim 14 characterized further by the addition, in each said branch, of an IGFET having its source-to-drain circuit connected in series with the source-to-drain circuit of the IGFET driver in said branch and its gate connected to the control gate of the IGFET driver in said branch.

16. The circuit of claim 13 characterized further in that (1) said cross-connected IGFETs are the loads of the respective branches and (2) both said IGFET loads having floating gates with a thin oxide area over the nodes to which respective ones of them are connected, so that temporarily raising the voltage to said second level causes opposite threshold shifts in said IGFET loads.

17. The circuit of claim 16 characterized further by the addition, in each said branch, of an IGFET having its source-to-drain circuit connected in series with the source-to-drain circuit of the IGFET load in said branch and its gate connected to the control gate of the IGFET load in said branch.

18. The circuit of claim 13 characterized further in that (1) said cross-connected IGFETs are the drivers of the respective branches and (2) only one of said IGFET drivers and neither of said loads has a floating gate with a thin oxide area over the node to which it is connected, the threshold voltage of said one IGFET driver being variable over a range which includes the threshold voltage of the other IGFET driver.

19. The circuit of claim 18 characterized by the addition of an IGFET having its source-to-drain circuit connected in series with the source-to-drain circuit of the variable threshold IGFET driver, the control gate of the latter being connected to the gate of the said additional IGFET, the threshold of said additional IGFET being lower than that of the fixed threshold IGFET driver.

20. The circuit of claim 13 characterized further in that (1) said cross-connected IGFETs are the loads of the respective branches and (2) only one of said IGFET loads and neither of said drivers has a floating gate with a thin oxide area over the node to which it is connected, the threshold voltage of said one IGFET load being variable over a range which includes the threshold voltage of the other IGFET load.

21. The circuit of claim 20 characterized further by an additional IGFET having its source-to-drain circuit connected in series with the source-to-drain circuit of the variable threshold IGFET load, the control gate of the latter IGFET being connected to the gate of the said additional IGFET, the threshold of said additional IGFET being lower than that of the fixed IGFET load.

22. The curciut of claim 12 characterized further by the fact that:

(1) said at least one cross-connected IGFET is a driver;

(2) said driver is the only IGFET in said circuit with a floating gate having a thin oxide area over the node to which it is connected;

(3) both of said loads are fixed threshold IGFETs;

(4) said floating gate extends from said IGFET driver to the channel area of the IGFET load in its branch; and

(5) the control gates of said IGFET driver and said IGFET load are interconnected.

23. The circuit of claim 2 characterized further by the addition of a pair of IGFETs to the branch containing the driver with a floating gate, each having its source-to-drain circuit connected in series with the source-to-drain circuit of a respective one of the IGFET driver and the IGFET load in said branch, the gates of both of said additional IGFETs being connected to the interconnected control gates of said IGFET driver and said IGFET load.

24. An integrated semiconductor memory latch circuit comprising in combination:

(a) a pair of branches, each branch including an IGFET load and an IGFET driver connected in series drain-to-drain at a node, the control gate of the IGFET driver of each branch being connected to the node of the other branch, one and only one of said IGFET drivers having an electrically variable threshold voltage, the threshold voltage of said one IGFET driver being variable over a range which includes the threshold of the other IGFET driver;

(b) means for normally maintaining a first voltage across said pair of branches which is below that required to change the threshold of said one IGFET driver;

(c) means for turning on a selected one of said IGFET drivers so as to store information in said latch circuit in volatile form; and

(d) means for temporarily raising the voltage across said pair of branches to a second, higher level which is sufficient to cause a long term change in the threshold of said IGFET driver.

25. The circuit of claim 24 characterized further by the addition of an IGFET having its source-to-drain circuit connected in series with the source-to-drain circuit of the variable threshold IGFET driver, the control gate of the latter being connected to the gate of the said additional IGFET, the threshold of said additional IGFET being lower than that of the fixed threshold IGFET driver.

26. An integrated semiconductor memory latch circuit comprising in combination:

(a) a pair of branches, each branch including in IGFET load and an IGFET driver connected in series drain-to-drain at a node, with their control gates being interconnected and with the control gates of the IGFETs, of each branch being connected to the node of the other branch, one and only one of said IGFET loads having an electrically variable threshold voltage, the threshold volage of said one IGFET load being variable over a range which includes the threshold voltage of the other IGFET load;

(b) means for normally maintaining a first voltage across said pair of branches is below that required to change the threshold of said one IGFET load;

(c) means for turning on a selected one of said IGFET drivers so as to store information in said latch circuit in volatile form; and

(d) means for temporarily raising the voltage across said pair of branches to a second, higher level which is sufficient to cause a long term change in the threshold of said one IGFET load.

27. The circuit of claim 26 characterized further by an additional IGFET having its source-to-drain circuit connected in series with the source-do-drain circuit of the variable threshold IGFET load, the control gate of the variable threshold IGFET load being connected to the gate of the said additional IGFET, the threshold of said additional IGFET being lower than that of the fixed threshold IGFET load.

28. An integrated semiconductor memory latch circuit comprising in combination:

(a) a pair of branches, each branch including;

(1) an IGFET load and an IGFET driver connected in series drain-to-drain at a node, the control gate of the IGFET driver of each branch being connected to the node of the other branch, each of said IGFET drivers having a floating gate with a thin oxide area over the node to which it is connected;

(2) an IGFET having its source-to-drain circuit connected in series with the source-to-drain circuit of the IGFET driver in said branch and its gate connected to the control gate of the IGFET driver in said driver in said branch;

(b) means for normally maintaining a voltage level of across said pair of branches at a first level which is below that required to cause tunneling across the thin oxide areas of said IGFET drivers;

(c) means for turning on a selected one of said IGFET drivers so as to store information in said latch circuit in volatile form; and

(d) means for temporarily raising the voltage across said pair of branches to a second level which is sufficient to induce tunneling across the thin oxide areas of said IGFET drivers so as to cause opposite threshold shifts therein.

29. An integrated semiconductor memory latch circuit comprising in combination:

(a) a pair of branches, each branch including;

(1) an IGFET load and an IGFET driver connected in series drain-to-drain at a node, with their control gates being interconnected and with the control gates of the IGFETs of each branch being connected to the node of the other branch, each of said IGFET loads having a floating gate with a thin oxide area over the node to which it is connected;

(2) an IGFET having its source-to-drain circuit connected in series with a source-to-drain circuit of the IGFET load in said branch and its gage connected to the control gate of the IGFET load in said branch;

(b) means for normally maintaining a voltage level across said pair of branches at a first level which is below that required to cause tunneling across the thin oxide areas of said IGFET drivers;

(c) means for turning on a selected one of said IGFET drivers so as to store information in said latch circuit in volatile form; and

(d) means for temporarily raising the voltage across said pair of branches to a second level which is sufficient to induce tunneling across the thin oxide areas of said IGFET loads so as to cause opposite threshold shifts therein.

30. An integrated semiconductor memory latch circuit comprising in combination:

(a) a pair of branches, each branch including;

(1) an IGFET load and an IGFET driver connected in series drain-to-drain at a node, the control gate of the IGFET driver of each branch being connected to the node of the other branch, one and only one of said IGFET drivers having a floating gage with a thin oxide area over the node to which it is connected, the threshold voltage of said one IGFET driver being variable over a range which includes the threshold voltage of the other IGFET driver; and

(2) an IGFET having its source-to-drain circuit connected in series with the source-to-drain circuit of the variable threshold IGFET driver, the control gage of the latter being connected to the gate of the said additional IGFET, the threshold of said additional IGFET being lower than that of the fixed threshold IGFET driver;

(b) means for normally maintaining a first voltage across said pair of branches which is below that required to change the threshold of said one IGFET driver;

(c) means for turning on a selected one of said IGFET drivers so as to store information in said latch circuit in volatile form; and

(d) means for temporarily raising the voltage across said pair of branches to a second, higher level which is sufficient to cause a long term change in the threshold of said one IGFET driver.

31. An integrated semiconductor memory latch circuit comprising in combination:

(a) a pair of branches, each branch including;

(1) an IGFET load and an IGFET driver connected in series drain-to-drain at a node, with their control gates being interconnected and with the control gates of the IGFETs of each branch being connected to the node of the other branch, one and only one said IGFET loads having a floating gate with a thin oxide area over the node to which it is connected, the threshold voltage of said one IGFET load being variable over a range which includes the threshold voltage of the other IGFET load; and

(2) an IGFET having its source-to-drain circuit connected in series with the source-to-drain circuit of the variable threshold IGFET load, the control gate of the latter being connected to the gate of the said additional IGFET, the threshold of said additional IGFET being lower than that of the fixed threshold IGFET Load;

b. means for normally maintaining a first voltage across said pair of branches which is below that required to change the threshold of said one IGFET load;

c. means for turning on a selected one of said IGFET drivers so as to store information in said latch circuit in volatile form; and

d. means for temporarily raising the voltage across said pair of branches to a second, higher level which is sufficient to cause a long term change in the threshold of said one IGFET load.

32. An integrated semiconductor memory latch circuit comprising in combination a pair of branches, each branch including an IGFET load and an IGFET driver connected in series, drain-to-drain at a node, the control gate of the IGFET driver of each branch being connected to the node of the other branch, one and only one of said IGFET drivers having a floating gate with a thin oxide area at least partially over the node to which said one IGFET driver is connected and extending from said IGFET driver to the channel area of the IGFET load in its branch, said IGFET driver and the IGFET load in its branch interconnected control gates, with the control gate of said IGFET driver being capacitively coupled to the floating gate of said driver.

33. The circuit of claim 32 characterized further by the addition of a pair of IGFETs, each having its source-to-drain circuit connected in series with the source-to-drain circuit of a respective one of said IGFET driver and said IGFET load, the gate of both of said additional IGFETs being connected to the interconnected control gates of said IGFET driver and said IGFET load.