Epitaxial growth of dissimilar materials

• US 4,136,350 A
• Filed: 07/14/1977
• Issued: 01/23/1979
• Est. Priority Date: 07/14/1977
• Status: Expired due to Term

• Current Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Original Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Inventors: Tien, Ping K.
• Primary Examiner(s): Edlow, Martin H.
• Application Number:
  US05/815,720
• Time in Patent Office: 558 Days
• Field of Search: 357/17, 357/18, 357/16, 357/4, 357/61, 357/19, 350/96 WG
• US Class Current: 257/14
• CPC Class Codes: G02F 1/095 in an optical waveguide structure
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30

Abstract

A method of epitaxial crystal growth is disclosed in which the lattice constants of adjacent layers are in the ratios of small integers other than one. This method permits the use of previously incompatible compounds, in particular the combination of magneto optic and electro optic elements on the same substrate.

Claims

1. An article of manufacture comprising a first crystalline layer formed from a garnet compound having a first lattice constant A₁, and

a second crystalline layer formed from a compound comprising elements from groups III and V of the Periodic Table of the Elements formed on said first crystalline layer having a second lattice constant A₂, said first and second lattice constants forming two ratios A₁ /A₂ and A₂ /A₁, only one of which two ratios is substantially equal to an integer, said second crystalline layer being grown epitaxially onto at least a portion of said first crystalline layer.

2. An electrical device comprising a first crystalline layer formed from a garnet compound having a first lattice constant A₁,

a second crystalline layer formed from a compound comprising elements from groups III and V of the Periodic Table of the Elements having a second lattice constant A₂, said first and second lattice constants forming two ratios A₁ /A₂ and A₂ /A₁, only one of which two ratios is substantially equal to an integer, said second crystalline layer being grown epitaxially onto a portion of said substrate, and

means for passing electrical signals through at least one of said crystalline layers.

3. An integrated-optics apparatus comprising a first layer formed from a garnet compound having a first lattice constant A₁,

a second layer formed from a compound comprising elements from groups III and V of the Periodic Table of the Elements having a second lattice constant A₂, which two lattice constants form two ratios A₁ /A₂ and A₂ /A₁, only one of which two ratios is substantially equal to an integer, said second layer being grown epitaxially onto a portion of said first layer, at least two optical devices, one of said optical devices being epitaxially grown directly onto said first layer and a second one of said optical devices being epitaxially grown onto said second layer.

4. An integrated-optics device according to claim 3 in which said one of said optical devices is an magnetooptical device.

5. An integrated-optics device according to claim 3 in which said second one of said optical devices is an electrooptical device.

6. An integrated-optics apparatus according to claim 3, wherein said second one of said optical devices is a solid-state laser for producing and coupling a beam of radiation into said second layer and said one of said optical devices is a magnetooptic switch for modulating said beam of radiation.