Three layer waveguide for thin film lens fabrication

• US 4,141,621 A
• Filed: 08/05/1977
• Issued: 02/27/1979
• Est. Priority Date: 08/05/1977
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Aagard, Roger L., Ulmer, Robert P.
• Primary Examiner(s): Corbin, John K.
• Assistant Examiner(s): Lee, John D.
• Application Number:
  US05/822,116
• Time in Patent Office: 571 Days
• Field of Search: 350/96.11, 350/96.12, 350/96.18, 350/96.34, 350/175 GN, 350/178, 350/320, 156/643, 156/655, 156/667, 204/192 P, 204/192 EC
• US Class Current: 385/131
• CPC Class Codes: G02B 6/1245 Geodesic lenses

Abstract

In thin film optical systems including thin film optical waveguides, of such materials as Nb₂ O₅, it is desirable to fabricate thin film lenses. One of the types of lenses which can be made is the step-in-thickness type. This type of thin-film lens can be fabricated by plasma etching through a photoresist mask in such materials as Nb₂ O₅ and Ta₂ O₅. Plasma etching yields an etch wall with smooth steep sides which is important for good quality thin-film lenses; however, the etch rate is too variable for reproducible etch depth based upon etch time, and the bottom of the etch is very rough, causing excessive scattering loss. It has been found that a sandwich-like structure of Nb₂ O₅, TiO₂ and Nb₂ O₅ provides an improved arrangement in that a good control of the etch depth and a smooth flat bottom in the etch areas have been achieved by introducing the layer of TiO₂ as an etch stop.

Claims

1. A thin film lens fabricated in a layered optical waveguide comprising:

a multilayer optical waveguides comprising a first thin flim layer of (X₂ O₅) on a substrate, an intermediate thin of titanium dioxide (TiO₂) thereon, and a second thin film layer of (X₂ O₅) over the TiO₂, wherein X is an element selected from the group consisting of niobium and tantalum, the three layers together defining a waveguide, and the extremities of the first and second layers of (X₂ O₅) providing a top and bottom boundary of the waveguide whereby a wave is propagated by reflection between said top and bottom boundaries; and

a step-in-thickness lens in said waveguide formed by plasma etching away the desired lens shape in said second (X₂ O₅) layer, said TiO₂ operating as an etch stop during etch to provide a flat bottom for said etching away lens and, therefore, provide a flat top boundary for said lens formed by said remaining first and intermediate layer, whereby in said lens area the wave is propagated by reflection between said lens top boundary and said bottom boundary.

2. The invention according to claim 1 wherein x is niobium.

3. The invention according to claim 1 in which the sum thickness of said three layers is less than the thickness at which the TE₁ mode can propagate so that only the TE_o mode propagates.

4. The invention according to claim 1 wherein the first thin-film layer is from about 750 to about 1900 A in thickness, the intermediate layer of TiO₂ is from about 100 to about 120 A in thickness, and the second thin-film layer is from about 200 to about 1300 A in thickness.

5. The invention according to claim 1 wherein the first thin film layer is about 800 A in thickness, the intermediate layer of TiO₂ is about 120 A in thickness and the second thin film layer is 1300 A in thickness.

6. A thin film lens fabricated in a niobium pentoxide thin film waveguide in which waveguide the index of refraction is related to the film thickness, comprising;

a thin film waveguide on a substrate made up of two thin film layers of niobium pentoxide Nb₂ O₅ plus a thin film layer of titanium dioxide TiO₂ between said two layers, the total thickness of said three layers establishing the effective refractive index of said waveguide; and

,

a step-in-thickness lens in said waveguide, said lens formed by having plasma etched away the desired lens shape in said second Nb₂ O₅ layer, said TiO₂ operating as an etch stop during etch to provide a flat bottom for said etched away area and, therefore, provide a flat top boundary for said lens formed by said remaining first and intermediate layer, the total thickness of said first Nb₂ O₅ layer and the TiO₂ layer establishing the effective refractive index of said lens.

7. A triple layered thin film optical waveguide for thin film lens fabrication comprising:

a first thin film layer of niobium pentoxide (Nb₂ O₅) on a substrate,

an intermediate thin film layer of titanium dioxide (TiO₂) thereon,

and a second thin film layer of Nb₂ O₅ over the TiO₂, the three layers together defining a waveguide, the total thickness of said three layers establishing the effective refractive index of said waveguide, the total thickness of said three layers being less than the thickness at which the TE₁ mode can propagate so that only the TE_o mode can propagate, and the total thickness of said first and intermediate layers being sufficiently great that the effective index of refraction of said first and intermediate layers exceeds the cutoff thickness for the waveguide.

8. A method for preparing a thin film lens in a thin film optical waveguide comprising:

providing a first thin film layer of optical X₂ O₅ on a substrate;

providing an intermediate thin film layer of optical titanium dioxide (TiO₂) on said first layer;

providing a second thin film layer of optical X₂ O₅ on said intermediate layer, wherein x is an element selected from the group consisting of niobium and tantalum, said three layers comprising an optical waveguide;

providing a photoresist mask over the waveguide, the mask including a desired lens shape,

etching away by plasma etch in the second X₂ O₅ layer the masked lens shape, the TiO₂ layer beneath providing an etch stop;

whereby the remaining first and intermediate layers beneath the etch provide the desired lens.

9. The method according to claim 8 wherein the first thin film layer is about 800 A in thickness, the intermediate layer is about 120 A in thickness, and the second thin film layer is about 1300 A in thickness.