Optically monitoring the thickness of a depositing layer

• US 4,141,780 A
• Filed: 12/19/1977
• Issued: 02/27/1979
• Est. Priority Date: 12/19/1977
• Status: Expired due to Term

• Current Assignee: RCA Corporation
• Original Assignee: RCA Corporation
• Inventors: Kane, James, Kleinknecht, Hans P.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US05/862,189
• Time in Patent Office: 435 Days
• Field of Search: 356/108, 356/144, 356/152, 356/138, 427/9, 427/10, 156/626, 156/659, 156/662, 350/162 R
• US Class Current: 117/85
• CPC Class Codes: G01B 11/0675 using interferometry

Abstract

A method of optically monitoring the thickness of a layer of material being deposited on a substrate within a reaction chamber comprises forming on a body a diffraction grating profile, exposing the grating profile to a beam of light while depositing the material on both the substrate and the grating profile, whereby the grating profile functions as a relief pattern diffracting the light beam into diffracted beams of various orders, measuring the intensity of the first order (I₁) and second order (I₂) beams to obtain a ratio signal (I₂ /I₁), and then transmitting the ratio signal to processing means for determining the aspect groove width of the relief pattern, whereby the thickness of the depositing layer is determined from a pre-established relationship dependent upon the aspect groove width.

Claims

1. A method of optically monitoring the thickness of a layer of material being deposited on a substrate within a reaction chamber comprising the steps of:

forming on a body a diffraction grating profile having an aspect groove width A_o and a periodicity d,

exposing said diffraction grating profile to a beam of monochromatic light while depositing said material on both said substrate and said diffraction grating profile within said reaction chamber, whereby said diffraction grating profile, including the material deposited thereon, functions as a relief pattern, diffracting said beam of monochromatic light into diffracted beams of various orders, said relief pattern having a changing aspect groove width A,

measuring the intensity of the first order beam (^I

     1) and the second order beam (^I

     2) to obtain a ratio signal (^I 2/I₁) comprising the second order beam intensity divided by the first order beam intensity,

transmitting said ratio signal (^I 2/I₁) to processing means for determining said aspect groove width A, whereby the thickness T of said layer being deposited is determined from a pre-established relationship dependent upon the aspect groove width A.

2. A method as recited in claim 1 wherein said diffraction grating profile is a rectangular relief pattern whereby said aspect groove width A is equal approximately to A_o minus 2T, T being the thickness of said depositing layer, and wherein said processing means for determining said aspect groove width A utilizes the approximation A = d/π

cos ^-1 √

^I 2/I₁ , whereby said thickness T at a particular point in time is determined from the relationship T = (A_o - A)/2.

3. A method as recited in claim 2 wherein said body comprises a portion of said substrate, and wherein said forming step is performed by photolithographically masking a surface of said substrate and etching rectangular grooves therein, said grooves having a periodicity d and a groove width A_o having a value at least twice as large as the value of the thickness of said layer being optically monitored.

4. A method as recited in claim 3 wherein said beam of monochromatic light strikes said rectangular relief pattern uniformly at an angle acute to the plane of said relief pattern.

5. A method as recited in claim 4 wherein said measuring step is performed by utilizing photodetectors placed respectively at angular positions to receive said first order and said second order beams.

6. A method as recited in claim 5 wherein said photodetectors are silicon PIN diodes.

7. A method as recited in claim 1 wherein said beam of monochromatic light is a laser beam.

8. A method as recited in claim 1 wherein said substrate is a silicon wafer and wherein said depositing layer is an epitaxial layer of silicon.