Method of coating semiconductor substrates

• US 4,142,004 A
• Filed: 01/22/1976
• Issued: 02/27/1979
• Est. Priority Date: 01/22/1976
• Status: Expired due to Term

• Current Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Original Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Inventors: Hauser, Victor E. Jr., Sinha, Ashok K.
• Primary Examiner(s): Lesmes, George F.
• Assistant Examiner(s): Varndell, Jr., R. Eugene
• Application Number:
  US05/651,556
• Time in Patent Office: 1,132 Days
• Field of Search: 427/34, 427/82, 427/88, 427/89, 427/90, 427/91, 427/94, 427/39, 427/248, 29/576 R, 29/584, 118/49.5, 118/70, 204/192 C, 204/192 S
• US Class Current: 438/792
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/45508 Radial flow
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/3185 of siliconnitrides

Abstract

A low-temperature, high-pressure, medium-power process, which utilizes a radio frequency powered radial flow reactor, utilizes only silane and ammonia as the reactant gases for deposition. The methods disclosed result in the deposition on semiconductor wafers of moderately high density silicon-nitrogen films which have low tensile stress and good crack resistance. In addition, these films provide good step coverage, good scratch resistance, and an inert barrier to sodium and moisture.

Claims

1. A method for providing a silicon-nitrogen coating resistant to cracking on a silicon substrate comprising the steps of

placing the substrate in a nonsputtering type of radial flow reactor,

evacuating the reactor to a high vacuum,

heating the substrate to a temperature of about 300°

C.

introducing into the reactor a flow of gas comprising a mixture of argon, silane and ammonia and substantially free of oxygen and nitrogen, the ratio of silane to ammonia by volume being between 0.5 and 1.0, the rate of flow being at least 1500 SCCM, the dynamic pressure within the reactor being about 1000 microns, and the mixture being at least 95 percent argon, and

applying radio frequency energy to the reactor of sufficient amount based on the size and spacing of the electrodes in said reactor to establish a plasma glow discharge in the region of the substrate for depositing a silicon-nitrogen film on the substrate having either a low tensile or a compressive stress and relatively high resistivity.