Composite JFET-bipolar structure

• US 4,143,392 A
• Filed: 08/30/1977
• Issued: 03/06/1979
• Est. Priority Date: 08/30/1977
• Status: Expired due to Term

• Current Assignee: Signetics Corporation
• Original Assignee: Signetics Corporation
• Inventors: Mylroie, Steve W.
• Primary Examiner(s): Wojciechowicz, Edward J.
• Application Number:
  US05/828,999
• Time in Patent Office: 553 Days
• Field of Search: 357/43, 357/22, 357/34, 357/48, 357/52
• US Class Current: 257/273
• CPC Class Codes: H01L 27/0716 in combination with vertical bipolar transistors and diodes, or capacitors, or resistors

Abstract

A junction field effect transistor and a bipolar transistor are merged in a single composite device disposed within a single isolation region by the use of planar processing techniques. The device includes an annular source region formed within a semiconductor body portion constituting a collector zone. Within the central portion of the collector zone circumscribed by the annular source region there is formed an emitter zone nested within a region that constitutes both the drain region of the JFET and the base zone of the bipolar transistor. An annular channel region connects the annular source region and the central drain region. An annular region forming a semiconductor junction with the annular channel adjacent to the annular source region constitutes one of two gate regions of the JFET. The other gate region is constituted by the body portion serving as the collector zone.

Claims

1. A semiconductor device, comprising:

(a) a semiconductor body portion of first type conductivity and having a major surface;

(b) an annular first region of second type conductivity opposite said first type conductivity and extending from said major surface into said body portion;

(c) a second region of said second type conductivity located within a region of said body portion circumscribed by said annular first region and extending to said major surface;

(d) an annular third region of said second type conductivity extending between said first and second regions and extending from said major surface into said body portion a shallower distance than either of said first and second regions;

(e) a zone of said first type conductivity within said second region and extending to said major surface;

(f) means separated from said first and second regions, surrounding said second region and forming a semiconductor junction with a surface portion of said annular third region; and

(g) contact means conductively connected separately to said body portion, said annular first region, said zone, and said semiconductor junction-forming means.

2. The invention according to claim 1, wherein the semiconductor junction of (f) is located closer to said annular first region than to said second region.

3. The invention according to claim 1 and further including a buried region in a lowermost part of said body portion spaced from said first and second regions and of higher conductivity relative thereto, said buried region having a lateral extent which at least substantially encompasses the distance between said second region and the contact means to said body portion.

4. The invention according to claim 1 wherein the contact means conductively connected to said body portion comprises a surface zone in said body portion of higher conductivity relative thereto, and a metal portion forming ohmic contact with said surface zone.

5. The invention according to claim 1 and further including means for applying operating potentials to said contact means whereby said annular first region operates as a source of a JFET, said body portion operates as a collector of a bipolar transistor and a bottom gate of said JFET, said zone operates as an emitter of said bipolar transistor, and said semiconductor junction-forming means operates as a top gate of said JFET.

11. The invention according to claim 1 wherein the means in (f) comprises a semiconductor region of first type conductivity forming a semiconductor junction with said annular third region.

12. The invention according to claim 1 wherein the means in (f) comprises a metal region forming a Schottky barrier junction with said annular third region.

6. A semiconductor device, comprising:

(a) a semiconductor body portion of first type conductivity and having a major surface;

(b) spaced apart source and drain regions of second type conductivity formed in said body portion and extending from said major surface a given depth within said body portion, an outer one of said regions surrounding an inner one of said regions;

(c) a channel region of said second type conductivity extending the entire distance between said source and drain regions and extending from said major surface into said body portion a smaller distance than said given depth;

(d) means forming an emitter zone of said first type conductivity within one of said source and drain regions, said one region constituting a base zone;

(e) means spaced from said source, drain, and channel regions and forming a collector contact with a portion of the major surface of said semiconductor body portion; and

(f) means spaced between said source and drain regions, surrounding the inner one of said regions and forming a semiconductor junction with a surface portion of said channel region so as to constitute a first gate region of a JFET including said source, drain, and channel regions as component parts thereof, with the means in (e) constituting a contact to another gate region of said JFET separate from said first gate region.

7. The invention according to claim 6, wherein said semiconductor body portion has N type conductivity.

8. The invention according to claim 6 and further including isolation means surrounding said device.

9. The invention according to claim 6 wherein said source and drain regions and said emitter zone are formed by diffusion.

10. The invention according to claim 6 wherein said channel region and said gate region are formed by ion implantation.

13. The invention according to claim 6 wherein the means in (f) comprises a semiconductor region of first type conductivity forming a semiconductor junction with said channel region.

14. The invention according to claim 6 wherein the means in (f) comprises a metal region forming a Schottky barrier junction with said channel region.