×

Composite JFET-bipolar structure

  • US 4,143,392 A
  • Filed: 08/30/1977
  • Issued: 03/06/1979
  • Est. Priority Date: 08/30/1977
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device, comprising:

  • (a) a semiconductor body portion of first type conductivity and having a major surface;

    (b) an annular first region of second type conductivity opposite said first type conductivity and extending from said major surface into said body portion;

    (c) a second region of said second type conductivity located within a region of said body portion circumscribed by said annular first region and extending to said major surface;

    (d) an annular third region of said second type conductivity extending between said first and second regions and extending from said major surface into said body portion a shallower distance than either of said first and second regions;

    (e) a zone of said first type conductivity within said second region and extending to said major surface;

    (f) means separated from said first and second regions, surrounding said second region and forming a semiconductor junction with a surface portion of said annular third region; and

    (g) contact means conductively connected separately to said body portion, said annular first region, said zone, and said semiconductor junction-forming means.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×