Power module with isolated substrates cooled by integral heat-energy-removal means

• US 4,145,708 A
• Filed: 06/13/1977
• Issued: 03/20/1979
• Est. Priority Date: 06/13/1977
• Status: Expired due to Term

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Ferro, Armand P., Harnden, John D. Jr., McLaughlin, Michael H.
• Primary Examiner(s): Wojciechowicz, Edward J.
• Application Number:
  US05/805,734
• Time in Patent Office: 645 Days
• Field of Search: 357/80, 357/81, 357/82
• US Class Current: 257/715
• CPC Class Codes: F28D 15/0266 with separate evaporating and condensing chambers connected by at least one conduit; Loop-type heat pipes; with multiple or common evaporating or condensing chambers F28D15/043 takes precedence
• CPC Class Codes: F28D 15/0275 Arrangements for coupling heat-pipes together or with other structures, e.g. with base blocks; Heat pipe cores
• CPC Class Codes: F28F 1/24 and extending transversely F28F1/38 takes precedence
• CPC Class Codes: H01L 2023/4025 Base discrete devices, e.g. presspack, disc-type transistors
• CPC Class Codes: H01L 23/4006 with bolts or screws
• CPC Class Codes: H01L 23/427 Cooling by change of state, e.g. use of heat pipes by liquefied gas H01L23/445
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

The evaporating area of a heat pipe or thermosiphon evaporator is used as the thermal sink for one face of an electrically isolated substrate upon the opposite face of which are mounted and interconnected one or more power semiconductors and other components requiring cooling. Both sides of semiconductor devices mounted on the isolating substrate may be cooled while allowing each of a plurality of different combinations of electrical devices and/or interconnections to be achieved.

Claims

1. A cooled semiconductor power module comprising:

a thermosiphon including a hollow block of heat-conductive material with a coolant fluid contained therein and further including an external surface from which heat energy applied thereto is conducted to vaporize a portion of said coolant fluid;

a substrate of heat-conductive, electrically-insulative material including first and second opposed surfaces, said first surface being bonded to said external surface, and

at least one semiconductor device including at least two electrodes, at least one of said electrodes being bonded to said second surface of said substrate.

2. The semiconductor power module of claim 1 wherein said block includes an aperture and removable plate means covering said aperture for sealing said coolant fluid in said thermosiphon, said plate means including opposed surfaces, the opposed surface of said plate means furthest from said block forming said external surface.

3. The semiconductor power module of claim 2 wherein said thermosiphon comprises a heat pipe including a wicking structure situated within said hollow block and attached to the remaining surface of said plate means for sealing.

4. The semiconductor power module of claim 2 wherein said substrate is comprised of beryllia.

5. A cooled semiconductor power module comprising:

a thermosiphon including a hollow block of heat-conductive material with a coolant fluid contained therein and further including an external surface from which heat energy applied thereto is conducted to vaporize a portion of said coolant fluid;

a substrate of heat-conductive, electrically-insulative material including first and second opposed surfaces, said first surface being bonded to said external surface;

a plurality of mounting pads of highly thermally conductive material situated on the second surface of said substrate and bonded thereto;

a plurality of semiconductor devices, each including at least two electrodes, one electrode of each of said semiconductor devices being bonded to a respective separate mounting pad, and

a plurality of lead means, each of said lead means being bonded to each of the remaining electrodes, respectively, and further bonded to a selected one of a group consisting of the remaining mounting pads and the remaining electrodes.

6. The semiconductor power module of claim 5 wherein said thermosiphon includes an aperture, said thermosiphon further including removable plate means covering said aperture for sealing said coolant fluid in said thermosiphon, said removable plate means including opposed surfaces, the opposed surface of said plate means furthest from said block forming the external surface of said thermosiphon.

7. The semiconductor power module of claim 6 wherein said substrate is comprised of beryllia.

8. The semiconductor power module of claim 6 wherein said thermosiphon comprises a heat pipe including a wicking structure situated within said hollow block and attached to the remaining surface of said removable plate means.

9. A cooled semiconductor power module comprising:

first and second thermosiphons each including a hollow block of heat-conductive material with a coolant fluid contained therein, and further respectively including first and second external surfaces from which heat energy applied thereto is conducted to vaporize a portion of the coolant fluid in each of said first and second thermosiphons;

first and second substrates of heat-conductive, electrically-insulative material, each of said first and second substrates including first and second opposed surfaces, the first surface of said first substrate and the first surface of said second substrate being respectively bonded to said first and second external surfaces;

at least one electrically-conductive mounting pad situated on each of the second surfaces of said first and second substrates, each mounting pad on the second surface of said first substrate having a corresponding mounting pad on the second surface of said second substrate; and

at least one semiconductor device having opposed surfaces with electrodes situated on the surfaces of said semiconductor device, said semiconductor device situated between said corresponding conductive mounting pads and operatively attached thereto.

10. The semiconductor power module of claim 9 including additional semiconductor devices, each of said additional semiconductor devices being situated between corresponding conductive mounting pads, respectively, and operatively attached thereto, respectively, wherein the conductive mounting pads on one of said first and second substrates are joined to one another to form an electrical connection between selected electrodes.

11. The semiconductor power module of claim 10 wherein said substrates are comprised of beryllia.

12. The semiconductor power module of claim 10 wherein said first and second thermosiphons comprise heat pipes.