Method of manufacturing liquid crystal display device involving controlling the vapor deposition speed of the orientation layers

• US 4,146,656 A
• Filed: 09/13/1976
• Issued: 03/27/1979
• Est. Priority Date: 09/19/1975
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Kinugawa, Kiyoshige, Toriyama, Kazuhisa, Tanaka, Hironari
• Primary Examiner(s): Pitlick, Harris A.
• Application Number:
  US05/722,435
• Time in Patent Office: 925 Days
• Field of Search: 428/1, 427/58, 427/109, 427/124, 427/255, 427/166, 427/167, 350/160 LC, 350/341, 29/572
• US Class Current: 427/109
• CPC Class Codes: C09K 19/22 linked by a chain containing carbon and nitrogen atoms as chain links, e.g. Schiff bases
• CPC Class Codes: C09K 2323/033 Silicon compound, e.g. glass or organosilicon
• CPC Class Codes: G02F 1/133734 by obliquely evaporated films, e.g. Si or SiO2 films

Abstract

A liquid crystal display device of the type comprising outer and lower substrates, electrodes formed on the inner surfaces of the substrates, liquid crystal orientation layers covering the protective films, and a liquid crystal interposed between the liquid crystal orientation films, is manufactured by forming the liquid crystal orientation layers by depositing SiO onto the protective films at a definite deposition angle with respect to the protective films and at a vapor deposition speed which varies in accordance with the type of the liquid crystal used.

Claims

1. A method of manufacturing a liquid crystal display device of the type comprising upper and lower substrates, transparent electrodes formed on the inner surfaces of said substrates, protective films covering said electrodes, liquid crystal orientation layers covering said protective films, and a liquid crystal, ##STR5## where R is selected from the group consisting of C_n H_2n+a -- and C_n H_2n+1 O--, interposed between said liquid crystal orientation layers, said method comprising the step of forming said liquid crystal orientation layers by depositing an inorganic substance comprising SiO onto said protective films at a deposition angle of 5°

to 10°

with respect to said protective films and at a vapor deposition speed of 4A/sec to 10A/sec to provide an inclination angle of the molecule of the liquid crystal with respect to the protective film.

2. The method according to claim 1 wherein said deposition angle and said deposition speed form a series of islands of said inorganic substance on the surface of each protective film, said islands extending in the same direction.

3. The method according to claim 1 wherein said liquid crystal display device is of the field effect type and said series of islands on said protective films extend to substantially right angles.

4. The method according to claim 1 wherein said liquid crystal comprises a 1:

2 mixture of ##STR6##

5. The method according to claim 1 wherein said liquid crystal comprises a Schiff system liquid crystal having a structure ##STR7##

6. The method according to claim 1 wherein said liquid crystal comprises a mixture of a Schiff system liquid crystals having a structure ##STR8##