Method and apparatus for manufacturing high-purity silicon rods

• US 4,150,168 A
• Filed: 03/02/1978
• Issued: 04/17/1979
• Est. Priority Date: 03/02/1977
• Status: Expired due to Term

• Current Assignee: Komatsu Electronic Metals Co., Ltd. (Sumco Corporation)
• Original Assignee: Kabushiki Kaisha Komatsu Seisakusho
• Inventors: Yatsurugi, Yoshifumi, Takahashi, Nagao, Yusa, Atsushi
• Primary Examiner(s): Silverberg, Sam
• Application Number:
  US05/882,817
• Time in Patent Office: 411 Days
• Field of Search: 427/51, 427/86, 427/87, 264/81, 118/48, 118/49, 118/49.1, 118/49.5, 156/611, 156/613
• US Class Current: 427/588
• CPC Class Codes: C01B 33/035 by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
• CPC Class Codes: C23C 16/22 characterised by the deposition of inorganic material, other than metallic material
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence

Abstract

A method of manufacturing high-purity silicon rods by subjecting a silicon compound to pyrolysis on a plurality of rod-shaped high-purity silicon carrier members which have been red-heated by directly passing an electric current therethrough thereby depositing high-purity silicon thereon, characterized in that monosilane supplied into a pyrolysis container is subjected to pyrolysis or thermal decomposition on said red-heated carrier members while insulating the radiant heat between said red-heated carrier members along the overall length thereof.

Claims

1. A method of manufacturing high-purity, silicon rods by subjecting a silicon compound to pyrolysis on a plurality of rod-shaped high-purity silicon carrier members which have been red-heated by directly passing an electric current therethrough thereby depositing high-purity silicon thereon, characterized in that monosilane supplied into a pyrolysis container is subjected to pyrolysis on said red-heated carrier members while insulating the radiation heat between said carrier members along the overall length thereof.

2. The method as claimed in claim 1, wherein said plurality of red-heated high-purity silicon carrier members are subjected to thermal insulation by a thermal insulator located at equal space intervals from them.

3. The method as claimed in claim 1, wherein each of said plurality of red-heated, high-purity silicon carrier members is thermally insulated by a thermal insulator.

4. The method as claimed in claim 1, wherein monosilane is supplied into a pyrolysis container through leading ends of each of thermally insulating plates of the thermal insulator.

5. The method as claimed in claim 4, wherein monosilane is supplied into a pyrolysis container through upper, intermediate and lower stage supply ports formed at the leading ends of thermal insulating plates of the thermal insulator.

6. The method as claimed in claim 5, wherein monosilane is supplied in equal amounts through the upper, intermediate and lower monosilane supply ports.