Semiconductor controlled luminescent device

• US 4,152,711 A
• Filed: 03/25/1977
• Issued: 05/01/1979
• Est. Priority Date: 04/01/1976
• Status: Expired due to Term

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Nakata, Josuke
• Primary Examiner(s): Edlow, Martin H.
• Application Number:
  US05/781,462
• Time in Patent Office: 767 Days
• Field of Search: 357/17, 357/18, 357/22
• US Class Current: 257/79
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 33/0008 having p-n or hi-lo junctions
• CPC Class Codes: H01L 33/50 Wavelength conversion elements

Abstract

A p type semiconductor gate layer is buried in an N type semiconductor cathode layer to encircle a channel through which the forward current of a luminescent PN junction passes. A reverse voltage is applied to the gate layer to spread a depletion layer in the channel to control the forward current and therefore the emission of light. The gate layer may be disposed on that surface of the cathode layer remote from the luminescent PN junction with a groove disposed the other surface of the cathode layer to narrow the channel.

Claims

1. A semiconductor controlled luminescent device comprising a semiconductor substrate including:

a P type region and an N type region forming a luminescent PN junction for producing luminescence when a forward current flows therethrough;

an anode electrode disposed in ohmic contact with said P type region;

a cathode electrode disposed in ohmic contact with said N type region;

a control region disposed adjacent to one of said P type region and said N type region and having a conductivity type opposite the region adjacent to which it is disposed for forming a control PN junction therewith and having a shape for defining a current passageway for said forward current of said luminescent PN junction and for producing a depletion layer in said current passageway when a reverse voltage is applied across said control PN junction the size of which depletion layer is determined by the magnitude of said reverse voltage, whereby the magnitude of said current passageway is controlled by controlling the size of said depletion layer and thus controlling the amount of luminescence; and

a control electrode disposed in ohmic contact with said control region.

2. A semiconductor controlled luminescent device as claimed in claim 1 wherein said semiconductor substrate is formed of a compound including gallium (Ga).

3. A semiconductor controlled luminescent device as claimed in claim 1 wherein said semiconductor substrate is formed of a semiconductor selected from the group consisting of gallium arsenide (GaAs), gallium phosphide (GaP), gallium antimonide (GaSb), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide-phosphide (GaAs_1-x P_x where x has a value greater than zero and less than one), gallium-aluminum phosphode (Ga_1-x Al_x P where x has a value greater than zero and less than one), and indium-gallium phosphide (In_1-x Ga_x P where x has a value greater than zero and less than one).

4. A semiconductor controlled luminescent device as claimed in claim 1 wherein said luminescent junction comprises a junction selected from the group consisting of a PN junction, a P-I junction, an N-I junction and a P-I-N junction.

5. A semiconductor controlled luminescent device as claimed in claim 1 wherein said control electrode disposed in ohmic contact with said control region forms a Schottky barrier therebetween, and is responsive to a reverse voltage applied thereto to form said depletion region for controlling said magnitude of said current passageway.

6. A semiconductor controlled luminescent device as claimed in claim 1 wherein said control region is reticulated in a plan view thereof and buried in said semiconductor substrate having one exposed portion and said control electrode is disposed in ohmic contact with said exposed portion of said control region.

7. A semiconductor controlled luminescent device as claimed in claim 1 wherein said control region is disposed on one of the main surfaces of said semiconductor substrate according to selective diffusion technique and reticulated in a plan view thereof.

8. A semiconductor controlled luminescent device comprising, in combination, an N type semiconductor cathode layer including a pair of main opposite surfaces, a P type semiconductor anode layer disposed on one portion of one of said main surfaces of said N type semiconductor cathode electrode to form a luminescent PN junction therebetween, a P type semiconductor gate layer disposed on the main other surface of said N type semiconductor cathode layer to face that portion of a current passageway for a flow of forward current through said luminescent PN junction located in parallel relationship with said main surface of said N type semiconductor cathode layer within the latter, said P type semiconductor layer forming a gate PN junction with said N type semiconductor cathode layer, a cathod electrode disposed in ohmic contact with the one main surface of said N type semiconductor cathod layer to encircle said P type semiconductor anode layer to form a predetermined spacing therebetween, an anode electrode disposed in ohmic contact with said P type semiconductor anode layer, a gate electrode disposed in ohmic contact with said P type semiconductor gate layer, and control means for applying a reverse voltage across said gate PN junction to spread a depletion layer in said current passageway to control the forward current flowing through said luminescent PN junction dependent upon said spread of said depletion layer.

9. A semiconductor controlled luminescent device as claimed in claim 8 wherein a groove is disposed on the one main surface of said N type semiconductor cathode layer at its position where said current passageway for the flow of forward current through said luminescent PN junction runs in parallel relationship said main surface of said N type semiconductor cathode layer thereby to narrow said current passageway.

10. A semiconductor controlled luminescent device comprising, in combination, a P type semiconductor anode layer including a pair of main opposite surfaces, an N type semiconductor cathode layer disposed on one portion of one of said main surfaces of said P type semiconductor anode layer to form a luminescent PN junction therebetween, an N type semiconductor gate layer disposed on the main other surface of said P type semiconductor anode layer to face that portion of a current passageway for a flow of forward current through said luminescent PN junction located in parallel relationship with said main face of said P type semiconductor anode layer within the latter, said N type semiconductor layer forming a gate PN junction with said P type semiconductor anode layer, an anode electrode disposed in ohmic onctact with the one main surface of said P type semiconductor anode layer to encircle said N type semiconductor cathode layer to form a predetermined spacing therebetween, a cathode electrode disposed in ohmic contact with said N type semiconductor cathode layer, a gate electrode disposed in ohmic contact with said N type semiconductor gate layer, and control means for applying a reverse voltage across said luminescent PN junction to spread a depletion layer in said current passageway to control the forward current flowing through said luminescent PN junction dependent upon said spread of said depletion layer.

11. A semiconductor controlled luminescent device as claimed in claim 10 wherein a groove is disposed on the one main surface of said P type semiconductor anode layer at its position where said current passageway for the flow of forward current through said luminescent PN junction runs in parallel relationship with said main surfaces of said P type semiconductor anode layer thereby to narrow said current passageway.