Manufacture of solar cells

• US 4,152,824 A
• Filed: 12/30/1977
• Issued: 05/08/1979
• Est. Priority Date: 12/30/1977
• Status: Expired due to Term

• Current Assignee: ASE Americas Incorporated
• Original Assignee: Mobil Tyco Solar Energy Corporation
• Inventors: Gonsiorawski, Ronald
• Primary Examiner(s): Ozaki, G.
• Application Number:
  US05/865,953
• Time in Patent Office: 494 Days
• Field of Search: 148/187, 148/188, 148/189, 136/89 SG, 136/89 CC, 29/572, 357/30
• US Class Current: 438/98
• CPC Class Codes: C23C 18/1879 Use of metal, e.g. activation, sensitisation with noble metals
• CPC Class Codes: H01L 21/223 using diffusion into or out of a solid from or into a gaseous phase H01L21/221 - H01L21/222 take precedence; diffusion through an applied layer H01L21/225
• CPC Class Codes: H01L 21/2255 the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
• CPC Class Codes: H01L 31/068 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 148/033 Diffusion of aluminum
• CPC Class Codes: Y10S 148/153 Solar cells-implantations-laser beam

Abstract

The invention provides a method of producing solar cells having a composite shallow/deep junction device construction. The solar cells have grid-like contacts on their front energy-receiving sides, with each portion of each contact being coincident, i.e., aligned with, the deep junction regions while the shallow junction regions are exposed to incident radiation. The composite junction and contacts are formed by a novel method which employs conventional techniques, notably the use of doped oxide films as diffusion sources.

Claims

1. A method of making a photovoltaic semiconductor solar cell comprising the steps of:

(1) providing a semiconductor body of a first conductivity type and having first and second opposite surfaces;

(2) forming on said first surface a continuous layer of a material containing a dopant capable upon diffusion into said body of forming a region of a second opposite conductivity type in said body;

(3) removing said layer from selected portions of said surface so as to form a grid-like pattern of apertures defined by intervening non-removed sections of said layer;

(4) heating said body in an atmosphere containing said dopant at a temperature at which said dopant will diffuse into said body from said layer and said atmosphere so as to form in said body relatively deep diffused regions of opposite conductivity type in line with said apertures and relatively shallow diffused regions of said opposite conductivity type in line with said intervening layer sections, said regions establishing a junction within said body; and

(5) forming conductive contacts on said surfaces with the contacts on said first surface conforming to and overlying said deep diffused regions.

2. Method according to claim 1 wherein said semiconductor body is P-type conductivity silicon and said diffused dopant regions are N-type conductivity.

3. Method according to claim 2 wherein said dopant is phosphorus, arsenic or antimony.

4. Method according to claim 3 wherein said dopant is phosphorus.

5. Method of making a solar cell comprising the steps of:

(a) providing a substrate in the form of a semiconductor body of a first type conductivity;

(b) depositing on one surface of said body a diffusion source in the form of a film doped with a diffusion impurity of a second conductivity type;

(c) removing said film from only selected areas of said surface so as to form a pattern of apertures defined by intervening sections of said film;

(d) diffusing said second conductivity type impurity out of said film and through said surface into said body and also diffusing additional second conductivity type impurity into said body via the apertures in said film so as to form a diffused second conductivity type region in said body which is separated from the first conductivity type bulk region of said body by a P/N junction and which has a greater depth measured from said surface along the areas of said apertures than along the areas of said intervening sections; and

(e) forming a metal contact on said one surface only in the areas thereof coincident with said apertures.

6. Method of claim 5 further including the step of removing said intervening sections of said film from said surface after said conductivity type region has been formed.

7. Method of claim 6 wherein said intervening sections of film are removed after the metal contact has been formed.

8. Method of claim 5 wherein said body has a second surface forming a boundary of said first conductivity type bulk region, and further including the step of introducing a first conductivity type impurity to said conductivity type bulk region so as to form a region of relatively high first type conductivity adjacent to said second surface, and thereafter forming a metal contact on said second surface.

9. Method of claim 8 wherein said region of relatively high first type conductivity is formed by diffusing said first conductivity type impurity through said second surface into said body from a second film overlying said second surface.

10. Method of claim 5 wherein said substrate is semiconductor silicon.

11. Method of claim 10 wherein said substrate is P-type silicon.

12. Method of claim 11 wherein said second conductivity type impurity is phosphorus or arsenic.

13. Method of claim 5 wherein said film is vitreous SiO₂.

14. Method of claim 5 wherein said diffusion source is a silicate glass containing phosphorus or arsenic.

15. Method of claim 5 wherein said apertures are formed by etch removal of said film.

16. Method of claim 15 wherein said diffusion source is a silicate glass film containing phosphorus, arsenic or antimony.

17. Method of claim 5 wherein said semiconductor body is silicon and further wherein said diffusion source is a silicate glass film containing phosphorus, arsenic or boron and is formed by contacting said surface under heating with a vaporous mixture of silane, oxygen, and a hydride of phosphorus, arsenic or boron, said heating being to a temperature such that said silane and hydride are oxidized and interact to form a glass film which is deposited on said surface and contains atoms of said phosphorus or arsenic.

18. Method of claim 17 wherein formation of said second conductivity type region involves heating said glass film to a temperature high enough to cause said atoms of phosphorus or arsenic to diffuse through said glass into said semiconductor body.

19. Method of claim 18 wherein said body is disposed in an atmosphere containing atoms of phosphorus or arsenic while it is being heated to effect formation of said second conductivity type region, whereby phosphorus or arsenic atoms from said atmosphere will diffuse into said body via said apertures to form the greater depth portions of said second conductivity type region.