×

Method of manufacturing intergrated injection logic semiconductor devices utilizing self-aligned double-diffusion techniques

  • US 4,153,487 A
  • Filed: 08/05/1977
  • Issued: 05/08/1979
  • Est. Priority Date: 12/27/1974
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of manufacturing an integrated injection logic semiconductor device in a selected portion of a semiconductor layer comprising the steps of forming the semiconductor layer of the opposite conductivity type on a semiconductor substrate of one conductivity type;

  • forming an insulation film on said semiconductor of the opposite conductivity type;

    forming first, second and third openings through said insulation film;

    doping an impurity of said one conductivity type through said first opening thereby forming a first one conductivity type region;

    doping an impurity of the opposite conductivity type into said semiconductor layer of said opposite conductivity type through said first and second openings in an oxidizing atmosphere thereby forming first and second opposite conductivity type regions respectively completely within said first one conductivity type region and in said selected portion of said semiconductor layer of the opposite conductivity type; and

    doping an impurity of said one conductivity type into said selected portion of the semiconductor layer of the opposite conductivity type through said third opening in an oxidizing atmosphere thereby forming a second one conductivity type region in said semiconductor layer.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×