Method of manufacturing power semiconductors with pressed contacts

• US 4,155,155 A
• Filed: 01/10/1978
• Issued: 05/22/1979
• Est. Priority Date: 01/19/1977
• Status: Expired due to Term

• Current Assignee: Alsthom-Atlantique
• Original Assignee: Alsthom-Atlantique
• Inventors: Bourdon, Bernard, Sifre, Gaston
• Primary Examiner(s): Smith, John D.
• Application Number:
  US05/868,242
• Time in Patent Office: 497 Days
• Field of Search: 427/89, 427/90, 427/91, 427/125, 427/229, 29/589, 29/590, 29/591, 156/630, 156/665
• US Class Current: 438/122
• CPC Class Codes: H01L 21/285 from a gas or vapour, e.g. condensation
• CPC Class Codes: H01L 23/051 another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
• CPC Class Codes: H01L 24/72 Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 29/41716 Cathode or anode electrodes for thyristors
• CPC Class Codes: H01L 29/42308 Gate electrodes for thyristors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01011 Sodium [Na]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01042 Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01052 Tellurium [Te]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: Y10S 148/018 : Compensation doping
• CPC Class Codes: Y10S 148/02 : Contacts, special

Abstract

The invention relates to a method of manufacturing power semiconductors with pressed contacts and with an interdigitated structure. The thickest contact metal coverings are formed by application of a metal layer by serigraphy on a first thin metal layer deposited by evaporation in a vacuum.

Claims

1. In a method of manufacturing power semiconductor devices with pressed contacts comprising the following stages:

formation of a monocrystalline semiconductor wafer of silicon in which semiconductor junctions are formed, a first surface of this wafer comprising at least a first, a second and a third zone;

formation of a contact plate fixed on the second surface of the wafer;

formation by serigraphic deposition of a first contact electrode and of a second contact electrode on said first and second zones respectively, the thickness of this second electrode being greater than that of the first;

formation of a first metal contact unit and of a second metal contact unit disposed on said electrodes and on said plate respectively and constituting the main terminals of the device; and

formation of clamping means pressing said two contact units against said plate, so as to ensure contact of the first contact unit with the second electrode and of the second contact unit with said contact plate;

the improvement wherein said stage of forming a first contact electrode and second contact electrode comprises the following steps;

depositing a first continuous thin metal layer of aluminum on said first surface of the semiconductor wafer providing good ohmic contact on the plate, before said serigraphic deposition;

local etching of said first metal layer to cause it to remain only on said first and second zones;

said deposit by serigraphy being in the form of a thick layer of paste on said second zone, said paste containing a proportion of silver by weight of more than 50% and a viscous binding agent; and

baking the layer of paste at a temperature on the order of 510°

C. to 540°

C. for a sufficient time to remove the binding agent of the paste to transform said layer of paste into a second compact metal layer.

2. A method according to claim 1, wherein said baking is carried out at a temperature of less than 530°

C.

3. A method according to claim 1, wherein said paste is a silver paste cntaining a proportion of metal by weight of higher than 65%.