Negative ion extractor for a plasma etching apparatus

• US 4,158,589 A
• Filed: 12/30/1977
• Issued: 06/19/1979
• Est. Priority Date: 12/30/1977
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Keller, John H., McKenna, Charles M.
• Primary Examiner(s): Massie, Jerome W.
• Application Number:
  US05/865,811
• Time in Patent Office: 536 Days
• Field of Search: 156/643, 156/646, 156/345, 204/156, 204/164, 204/192 E, 204/298, 219/121 P, 55/2, 55/3, 55/100, 250/369 LM, 250/528, 250/542
• US Class Current: 156/345.46
• CPC Class Codes: H01J 27/14 Other arc discharge ion sources using an applied magnetic field
• CPC Class Codes: H01J 37/08 Ion sources; Ion guns
• CPC Class Codes: H01J 37/3053 for evaporating or etching

Abstract

Process and apparatus for use in extracting negative ions from a plasma which is particularly useful in reactive ion etching of metals, silicon and oxides and nitrides of silicon in the manufacture of semiconductor devices. A magnetic field is employed in the apparatus and, herein, is created by a novel grid, through which negative ions pass to a surface, such as one to be etched, while free electrons are prevented from passing through the grid and out of the plasma. The novel process utilizes negative ions which have a large fraction in the atomic state.

Claims

1. A plasma apparatus, suitable for reactive ion etching, comprising

a vacuum enclosure including a first portion and second portion;

means for creating a plasma of negative and positive ions and radicals in said first portion;

a substrate mounted in second portion having a surface to be contacted by said ions;

means for applying a potential between said plasma and said substrate and of a polarity for directing negative ions to said surface; and

means for generating a magnetic field between said plasma and said substrate, and across more than one aperture connecting said first and second portions, said magnetic field being of a magnitude sufficient to retain electrons in the plasma, but insufficient to prevent negative ions from passing through the apertures and reaching said surface.

2. The appparatus of claim 1 wherein said potential applying means includes an electrode disposed between said magnetic field generating means and said substrate.

3. The apparatus of claim 2 wherein the potential applying means includes means for varying the potential so as to be able to pass negative ions of certain energies and direct them toward said substrate.

4. The apparatus of claim 1 wherein said magnetic means comprises a ferromagnetic grid.

5. The apparatus of claim 1 wherein an acceleration electrode grid means is positioned between said magnetic means and said substrate and having a potential applied thereto of positive polarity relative to the magnetic means.

6. In a plasma apparatus, for reactive ion etching, in which a plasma is separated from a substrate disposed in said apparatus and in which a potential is applied between said plasma and said substrate to attract species from the plasma and direct the species to said substrate, comprising the improvement of

means for establishing the polarity of said potential such that the species withdrawn from the plasma are negative ions;

and

means for generating a magnetic field between said plasma and said substrate of a magnitude sufficient to retain electrons in the plasma, but insufficient to prevent the negative ions from reaching the substrate.

7. The apparatus of claim 6 wherein an acceleration electrode grid means is positioned between said magnetic means and said substrate and having a potential applied thereto of positive polarity relative to the magnetic means.

8. The apparatus of claim 6 wherein the magnetic means comprises a ferromagnetic grid.

9. The apparatus of claim 8 wherein said ferromagnetic grid also serves as a source electrode for said plasma.