Complementary-FET driver circuitry for push-pull class B transistor amplifiers

• US 4,159,450 A
• Filed: 05/22/1978
• Issued: 06/26/1979
• Est. Priority Date: 05/22/1978
• Status: Expired due to Term

• Current Assignee: RCA Corporation
• Original Assignee: RCA Corporation
• Inventors: Hoover, Merle V.
• Primary Examiner(s): Mullins, James B.
• Application Number:
  US05/908,514
• Time in Patent Office: 400 Days
• Field of Search: 330/264, 330/265, 330/267, 330/268, 330/269, 330/277, 330/300, 307/205
• US Class Current: 330/264
• CPC Class Codes: H03F 2203/30012 the two SEPP amplifying transistors are Darlington composite transistors
• CPC Class Codes: H03F 3/30 Single-ended push-pull [SEPP] amplifiers single-ended sense amplifiers G11C7/067; Phase-splitters therefor
• CPC Class Codes: H03F 3/3008 Bifet SEPP output stages
• CPC Class Codes: H03F 3/3016 with symmetrical driving of the end stage

Abstract

A complementary or quasi-complementary Class B transistor amplifier stage, the halves of which have their output circuits serially connected between relatively negative and relatively positive operating supply voltages to receive direct current and are operated in push-pull with each other for signal to supply a common load from the interconnection of their output circuits, has driver circuitry including a pair of field effect transistors operated in push-pull to supply respective halves of the Class B transistor amplifier. A p-channel field effect transistor with source electrode connected to the relatively positive operating supply voltage drives one half of the Class B transistor amplifier stage from its drain electrode, and an n-channel field effect transistor with source electrode connected to the relatively negative operating supply voltage drives the other half of the Class B transistor amplifier stage. The field effect transistors in the driver circuitry are enhancement-mode types permitting their gate electrodes to be connected together to receive input signal potential, avoiding the need for voltage translating circuitry to secure their push-pull operation.

Claims

1. An amplifier comprising:

a p-channel field effect transistor and an n-channel field effect transistor, each having respective gate and source and drain electrodes and having a complementary drain current versus source-to-gate potential characteristic to that of the other;

an input signal terminal at the interconnected gate electrodes of said p-channel and n-channel field effect transistors;

means applying relatively positive and relatively negative operating potentials to the source electrode of said p-channel field effect transistor and to the source electrode of said n-channel field effect transistor, respectively;

means for applying a biasing potential to said input signal terminal, which biasing potential is substantially midway between said relatively positive and relatively negative operating potentials, which includes means for direct coupling each of the drain electrodes of said p-channel and n-channel field effect transistors to said input signal terminal;

first and second output transistor means of complementary conductivity types to said p-channel field effect transistor and to said n-channel field effect transistor, respectively, each having input and output and common electrodes;

means connecting the drain electrode of said p-channel field effect transistor to the input electrode of said first output transistor means applying the drain potential of said p-channel field effect transistor to the input electrode of said first output transistor means;

means connecting the drain electrode of said n-channel field effect transistor to the input electrode of said second output transistor means for applying the drain potential of said n-channel field effect transistor to the input electrode of said second output transistor means;

means connected between the input electrodes of said first and second output transistor means for biasing them so that said first output transistor means is non-conductive during substantial negative excursions of output signal and so that said second output transistor means is non-conductive during substantial positive excursions of output signal;

means for applying relatively positive and relatively negative operating potentials to the output electrode of said first output transistor means and to the output electrode of said second output transistor means, respectively; and

an output signal terminal between the common electrodes of said first and second output transistors means, respectively.

2. An amplifier as set forth in claim 1 wherein said means for direct coupling each of the drain electrodes of said p-channel and n-channel field effect transistors to said input terminal is exclusive of said first and second output transistor means and includes means for decoupling signal variations at the drain electrodes of said p-channel and n-channel field effect transistors from said input terminal.

3. An amplifier as set forth in claim 1 wherein said means for direct coupling each of the drain electrodes of said p-channel and n-channel field effect transistors to said input terminal includes, in addition to said first and second output transistor means,

means for direct coupling said output signal terminal to said input signal terminal.

4. An amplifier as set forth in claim 1 wherein said means connected between the input electrodes of said first and second output transistor means essentially consists of means for biasing said first and second output transistor means for Class B operation, which means includes:

a potential divider having an input circuit between the input electrodes of said first and second output transistor means and having an output connection at which a potential intermediate to those at the input electrodes of said first and second output transistor means is provided, and

a further transistor having an input electrode to which the output connection of said potential divider connects and having output and common electrodes connected to separate respective ones of the input electrodes of said first and second output transistor means.

5. An amplifier as set forth in claim 1 wherein said means connected between the input electrodes of said first and second output transistor means is a direct connection without substantial intervening impedance between those input electrodes.

6. An amplifier as set forth in claim 1 wherein the source electrode of said p-channel field effect transistor and the output electrode of said first output transistor means are connected together to receive similar-valued relatively positive operating potentials, and wherein the source electrode of said n-channel field effect transistor and the output electrode of said second output transistor means are connected together to receive similar-valued relatively negative operating potentials.

7. An amplifier as set forth in claim 1 wherein said means for applying relatively positive and relatively negative operating potentials to the source electrode of said p-channel field effect transistor and to the source electrode of said n-channel field effect transistor, respectively, includes:

first potential dividing means dividing the potential between the common and output electrodes of said first output transistor means for application to the source electrode of said p-channel field effect transistor; and

second potential dividing means dividing the potential between the common and output electrodes of said second output transistor means for application to the source electrode of said n-channel field effect transistor.

8. An amplifier as set forth in claim 1 wherein said means for applying relatively positive and relatively negative operating potentials to the source electrode of said p-channel field effect transistor and to the source electrode of said n-channel field effect transistor, respectively, includes:

first and second resistances included in connections of the source electrode of said p-channel field effect transistor to the common electrode of said first output transistor means and to its output electrode, respectively; and

third and fourth resistances included in connections of the source electrode of said n-channel field effect transistor to the common electrode of said second output transistor means and to its output electrode, respectively.

9. An amplifier as set forth in claim 8 wherein said means for applying relatively positive and relatively negative operating potentials to the source electrode of said p-channel field effect transistor and to the source electrode of said n-channel field effect transistor, respectively, includes:

a first bootstrap capacitor connected between said output signal terminal and the source electrode of said p-channel field effect transistor; and

a second bootstrap capacitor connected between said output signal terminal and the source electrode of said n-channel field effect transistor.

10. An amplifier as set forth in claim 1 wherein said means for applying relatively positive and relatively negative operating potentials to the source electrode of said p-channel field effect transistor and to the source electrode of said n-channel field effect transistor, respectively, includes:

a first bootstrap capacitor connected between said output signal terminal and the source electrode of said p-channel field effect transistor;

a second bootstrap capacitor connected between said output signal terminal and the source electrode of said n-channel field effect transistor; and

wherein the

means supplying relatively positive and relatively negative operating potentials to the source electrode of said p-channel field effect transistor and to the source electrode of said n-channel field effect transistor are, of a type for permitting said first boostrap capacitor to boost the source potential of said p-channel transistor during positive excursions of output signal at said output signal terminal and permitting said second bootstrap capacitor to boost the source potential of said n-channel transistor during negative excursions of output signal at said output signal terminal.

11. An amplifier as set forth in claim 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10 wherein said first output transistor is an NPN bipolar transistor and said second output transistor is a PNP bipolar transistor, each of these bipolar transistors having base and collector and emitter electrodes corresponding to their said input and output and common electrodes, respectively.

12. An amplifier as set forth in claim 1 wherein said first output transistor is an NPN bipolar transistor and said second output transistor is a PNP bipolar transistor, each of these bipolar transistors having base and collector and emitter electrodes corresponding to their said input and output and common electrodes, respectively, and wherein the channel resistances of said p-channel and n-channel field effect transistors are chosen to maintain said NPN and PNP transistors within their safe operating area ratings when said output terminal is short-circuited.

13. An amplifier as set forth in claim 1 wherein said first and said second output transistor means are field effect transistors, each having respective gate and drain and source electrodes corresponding to its input and output and common electrodes, respectively.

14. An amplifier as set forth in claim 13 wherein said means connected between the input electrodes of said first and second output transistor means is a direct connection without substantial intervening impedance between those input electrodes and wherein said first and second output transistor means are depletion-mode field effect transistors conditioned by said direct connection for Class AB push-pull operation.

15. An amplifier as set forth in claim 14 wherein said means for direct coupling each of the drain electrodes of said p-channel and n-channel field effect transistors to said input terminal includes resistance means connecting said direct connection between the input electrodes of said first and second output transistor means to said input signal terminal.

16. An amplifier as set forth in claim 15 wherein said resistance means includes a pair of resistive elements serially connected between said input signal terminal and said direct connection between the input electrodes of said first and second output transistor means and wherein a by-pass capacitor connects an interconnection between those resistive elements to a point of fixed potential.

17. An amplifier as set forth in claim 13 wherein said first and second output transistor means are enhancement-mode field effect transistors and wherein the means connected between the input electrodes of said first and second output transistor means is exclusive of said means for connecting the drain electrode of said p-channel transistor to the input electrode of said first output transistor means, is exclusive of said means for connecting the drain electrode of said n-channel transistor to the input electrode of said second output transistor means, and includes:

a further field effect transistor having a source electrode connected to the drain electrode of the one of said p-channel and n-channel field effect transistors of similar conductivity type to said further field effect transistor, having a drain electrode connected to the drain electrode of the one of said p-channel and said n-channel field effect transistors of complementary conductivity type to said further field effect transistor, and having a gate electrode; and

potential divider means dividing the potential between the source and drain electrodes of said further transistor for application to its gate electrode.

18. An amplifier as set forth in claim 13 wherein said first and second output transistor means are depletion-mode field effect transistors and wherein the means connected between the input electrodes of said first and second output transistor means is included in said means connecting the drain electrode of said p-channel field effect transistor to the input electrode of said first output transistor means, is included in said means connecting the drain electrode of said n-channel field effect transistor to the input electrode of said second output transistor means, and includes:

a further field effect transistor having a source electrode connected to the drain electrode of the one of said p-channel and said n-channel field effect transistors of the same conductivity type as said further field effect transistor, having a drain electrode connected to the drain electrode of the one of said p-channel and said n-channel field effect transistors of complementary conductivity type to said further field effect transistor, and having a gate electrode; and

potential divider means dividing the potential between the source and drain electrodes of said further transistor for application to its gate electrode.

19. An amplifier as set forth in claim 13, 17 or 18 having a direct-coupled feedback connection between said signal output terminal and said signal input terminal, included in said means for direct coupling each of the drain electrodes of said p-channel and n-channel field effect transistors to said input terminal.

20. An amplifier as set forth in claim 13 wherein said means for direct coupling each of the drain electrodes of said p-channel and n-channel field effect transistors to said input terminal includes:

means for providing similar direct-coupled feedback between the drains of said p-channel and n-channel field effect transistors and their gate electrodes.

21. An amplifier as set forth in claim 13 having:

means, exclusive of said first and second output transistor means, for providing similar direct-coupled feedback between the drains of said p-channel and n-channel field effect transistors and their gate electrodes.

22. A Class AB push-pull amplifier comprising:

a p-channel field effect transistor and an n-channel field effect transistor of depletion-mode type, each having respective gate and source and drain electrodes and having a complementary conductivity characteristic to that of the other;

means for applying relatively positive and relatively negative operating potentials to the drain electrodes of said n-channel and said p-channel field effect transistors, respectively;

a further field effect transistor of enhancement-mode type having a source electrode connected to the gate electrode of the one of said depletion-mode field effect transistors of similar conductivity type to itself, having a drain electrode connected to the gate electrode of the one of said depletion-mode field effect transistors of opposite conductivity type to itself, and having a gate electrode;

potential divider means for applying a fraction of the potential between the source and drain electrodes of said further field effect transistor between its source and gate electrodes;

a current source means connected to the gate electrode of said n-channel field effect transistor of depletion-mode type, and a current sink means connected to the gate electrode of sad p-channel field effect transistor of depletion-mode type, at least one of said current source means and said current sink means arranged to conduct current varying in accordance with an input signal; and

an output signal terminal to which the source electrodes of said p-channel and n-channel field effect transistors respectively connect.

23. A Class AB push-pull amplifier as set forth in claim 22 wherein said current source means comprises another p-channel field effect transistor having a gate electrode to which said input signal is applied, having a drain electrode connected to the gate electrode of said p-channel field effect transistor, and having a source electrode;

wherein said current sink means comprises another n-channel field effect transistor having a gate electrode to which said input signal is applied, having a drain electrode connected to the gate electrode of said n-channel field effect transistor, and having a source electrode; and

wherein relatively positive and relatively negativing operating potentials are applied to the source electrode of said p-channel transistor and to the source electrode of said n-channel transistor.