Thin film programmable read-only memory having transposable input and output lines
First Claim
1. A Read only memory comprising:
- a matrix of first and second sets of conductors the cross-points of which are connected by non-crystalline semiconductor switches in series with a fuse, each of said switching devices having a symmetrical voltage-current (V-I) characteristic regardless of polarity state and comprises in either polarity state a non-linear high resistance state region and a negative differential low resistance state region, selected ones of said fuses being opened by driving their corresponding switches into said negative differential low resistance state region to provide a rapid rise of current through said fuse whereby a plurality of data words are stored in said memory, andmeans for applying a signal of a predetermined magnitude to the input terminal of a preselected conductor of either said first or second set of conductors whereby a signal corresponding to a predetermined data word is provided at the output terminals of the other set of conductors.
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Abstract
A thin film programmable read-only memory is provided which comprises an X-Y matrix of conductors, the cross points of which are connected together by a switch element comprising a current-controlled negative differential resistance (CNDR) device in series with a semiconductor fuse. At low bias levels corresponding to read signals, the element behaves as a non-linear resistance. At large bias levels corresponding to write signals, the element will be driven to its negative differential resistance characteristic, the switching element becoming a permanent open circuit when the fuse blows. The symmetrical switching characteristics of the CNDR device allows the function of the X conductors (input or address lines) and Y conductors (output or word lines) to be transposed in that the address information can be applied to the Y lines, the output appearing at the X lines.
In an alternate embodiment, a threshold switching (TS) device is utilized in place of the CNDR device.
The current characteristics of the CNDR and TS devices are such that the fuse is blown rapidly and cleanly when the devices are appropriately biased.
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Citations
14 Claims
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1. A Read only memory comprising:
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a matrix of first and second sets of conductors the cross-points of which are connected by non-crystalline semiconductor switches in series with a fuse, each of said switching devices having a symmetrical voltage-current (V-I) characteristic regardless of polarity state and comprises in either polarity state a non-linear high resistance state region and a negative differential low resistance state region, selected ones of said fuses being opened by driving their corresponding switches into said negative differential low resistance state region to provide a rapid rise of current through said fuse whereby a plurality of data words are stored in said memory, and means for applying a signal of a predetermined magnitude to the input terminal of a preselected conductor of either said first or second set of conductors whereby a signal corresponding to a predetermined data word is provided at the output terminals of the other set of conductors. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A programmable read only memory comprising:
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a matrix of first and second sets of conductors the cross-points of which are connected by non-crystalline semiconductor switches in series with a fuse, each of said switching devices having a symmetrical voltage-current characteristic regardless of polarity and comprises in either polarity state, a non-linear high resistance state region and a negative differential low resistance state region, said first set of conductors having a plurality of input terminals associated therewith and said second set of conductors having a plurality of output terminals associated therewith, and means for applying a signal of sufficient magnitude to a selected input terminal whereby a current is caused to flow to selected output terminals causing the fuse associated with the selected input terminal and output terminals to be placed in an open state, said negative differential low resistance state region of said switches being such that a rapid rise in current flows through the fuse causing the fuse to be permanently open, representing a data word stored in said memory. - View Dependent Claims (9, 10)
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- 11. A memory matrix comprising an insulating base, a matrix of first and second groups of conductors deposited as a film on one side of said base and arranged so that each conductor of one group crosses over the conductors of the second group forming a plurality of cross points, a switching element at each cross point and comprising a current controlled negative resistance device in series with a fuse, said current controlled negative resistance device having a non-linear high resistance state below a threshold voltage level and a negative differential low resistance state when the applied voltage reaches or exceeds said threshold voltage, said series connected fuse being cleanly placed in an open circuit state by a sudden current rise produced when said current controlled resistance device is driven above said threshold level into said negative different low resistance state causing a rapid rise in fusing temperature which is proprotional to the square of said current rise.
Specification