Fabrication of photovoltaic devices by solid phase epitaxy

• US 4,165,558 A
• Filed: 11/21/1977
• Issued: 08/28/1979
• Est. Priority Date: 11/21/1977
• Status: Expired due to Term

• Current Assignee: Everett E. Crisman, William F. Armitage Jr
• Original Assignee: Everett E. Crisman, William F. Armitage Jr
• Inventors: Crisman, Everett E., Armitage, William F. Jr.
• Primary Examiner(s): Larkins, William D.
• Application Number:
  US05/853,325
• Time in Patent Office: 645 Days
• Field of Search: 357/30, 357/16, 29/572, 29/591, 148/176, 148/177, 148/1.5
• US Class Current: 438/93
• CPC Class Codes: H01L 31/068 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/184 the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 148/153 Solar cells-implantations-laser beam
• CPC Class Codes: Y10S 148/154 Solid phase epitaxy

Abstract

Fabrication of photovoltaic devices by solid phase epitaxy; devices produced by this method consisting of a semiconductor base and a semiconductor junction-forming epitaxial layer. The epitaxial layer grown by solid phase means from a metal-semiconductor alloy or from a sandwich structure of semiconductor/metal on the semiconductor base.

Claims

1. A method of forming a photovoltaic semiconductor device, comprising the steps of:

providing a semiconductor substrate of a given conductivity type having at least one substantially flat surface;

depositing a composite of metal and semiconductor on said flat surface, said composite containing dopant impurities capable of rendering the semiconductor of said composite opposite in conductivity type to said given conductivity type;

heating said semiconductor substrate and composite to a temperature, less than the melting temperature of said composite, sufficient to cause said semiconductor of said composite to epitaxially grow on said semiconductor substrate as a layer of opposite conductivity type to said given conductivity type; and

,

selectively stripping away the residual of said composite to leave a grid of said residual in ohmic contact with said layer of opposite conductivity type.

2. The method of claim 1, where said composite is an alloy of the metal and semiconductor components thereof.

3. The method of claim 1, wherein said composite of metal and semiconductor is a layered structure of metal and semiconductor layers.

4. The method of claim 1, whrein said metal used in metal-semiconductor composite being aluminum, gold, indium, silver, platinum, lead, gallium, tin, or alloys containing these metals.

5. The method of claim 1, wherein said impurities being aluminum, arsenic, boron, antimony, phosphorous, gallium, indium, or tin.

6. The method of claim 1, wherein said semiconductor substrate is silicon, germanium, or gallium arsenide.

7. The method of claim 1, wherein said epitaxially grown semiconductor layer is silicon, germanium, or gallium arsenide.