Thin-film integrated circuit with tank circuit characteristics and applications to thin-film filters and oscillators

• US 4,166,258 A
• Filed: 08/29/1974
• Issued: 08/28/1979
• Est. Priority Date: 08/29/1974
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Tseng, Samuel C.-C.
• Primary Examiner(s): Smith, Alfred E.
• Assistant Examiner(s): Nussbaum, Marvin
• Application Number:
  US05/501,552
• Time in Patent Office: 1,825 Days
• Field of Search: 33/72, 33/30 R, 310/8, 310/8.1, 310/9.8, 310/313, 310/365, 310/366, 331/107 A
• US Class Current: 333/195
• CPC Class Codes: H03H 9/027 U-shaped grating lines
• CPC Class Codes: H03H 9/1452 by finger overlap length, apodisation
• CPC Class Codes: H03H 9/6483 Ladder SAW filters

Abstract

A thin-film integrated circuit with tank circuit characteristics may comprise a surface acoustic wave transducer with appropriate geometry. A preferred embodiment of such integrated circuit includes, in addition to the surface acoustic wave transducer, surface acoustic wave reflecting means located adjacent the transducer, and preferably on opposite sides thereof. The reflecting means may include a pair of reflectors and be proportioned so that the device exhibits a single resonant-anti-resonant frequency pair, such as a single tank circuit. Alternatively, the reflectors may be proportioned such that the device exhibits multiple resonant-anti-resonant frequency pairs. The operating frequency may be as high as hundreds of megahertz to one gigahertz.

Applications of the thin-film integrated circuit to thin-film filters and oscillators are also disclosed.

In addition a novel form of surface acoustic wave transducer is disclosed which exhibits lower equivalent capacitance than do prior art surface acoustic wave transducers.

Claims

1. An improved surface acoustic wave transducer exhibiting a lower equivalent capacitance compared with prior surface acoustic wave transducers comprising:

a piezoelectric substrate,

a first plurality of at least three parallel conductors deposited on said substrate, two of said parallel conductors having means for connecting said transducer to an electrical circuit, a first and second of said parallel conductors being co-linear and having a gap therebetween,

a second plurality of parallel conductors orthogonal to first said plurality, each of said second plurality connected to one of said first plurality,

alternate ones of said second plurality connected to one of said co-linear conductors or said other conductor except in the vicinity of said gap where two adjacent conductors of said second plurality are connected to said other conductor.

2. The transducer of claim 1 wherein each of said second plurality of conductors is of equal length and width and spaced from adjacent ones of said second plurality of parallel conductors by equal distances.

3. A two-terminal thin-film device exhibiting tank circuit characteristics comprising:

a piezoelectric substrate

a single surface acoustic wave transducing means including at least a pair of conductors with interdigital electrodes deposited on said substrate,

surface acoustic wave reflecting means on said substrate adjacent said pair of conductors comprising a pair of surface acoustic wave reflectors located on opposite sides of said surface acoustic wave transducing means,

said surface acoustic wave transducing means exhibiting at least one resonant and anti-resonant frequency pair,

each of said conductors connected to a different one of said two terminals,

each of said reflectors comprising a series of parallel reflector elements, each of which is spaced from adjacent reflector elements by a quarter wavelength of said resonant frequency.

4. A two-terminal thin-film device exhibiting tank circuit characteristics comprising:

a piezoelectric substrate,

a single surface acoustic wave transducing means including at least a pair of conductors with interdigital electrodes deposited on said substrate,

surface acoustic wave reflecting means on said substrate adjacent said pair of conductors comprising a pair of surface acoustic wave reflectors located on opposite sides of said surface acoustic wave transducing means,

said surface acoustic wave transducing means exhibiting a plurality of resonant-anti-resonant frequency pairs wherein each of said reflectors comprise a plurality of parallel reflector elements spaced by a distance less than a quarter wavelength of a resonant frequency intermediate extreme ones of said resonant frequencies.

5. A thin-film filter comprising a plurality of interconnected thin-film means deposited on a piezoelectric substrate, each of said thin-film means comprising:

a single surface acoustic wave transducing means including at least a pair of conductors with interdigital electrodes deposited on said substrate and surface acoustic wave reflecting means,

said transducing means exhibiting at least one resonant and anti-resonant frequency pair,

said reflecting means comprising a pair of reflectors, located on opposite sides of said transducing means.

6. The filter of claim 5 in which each of said reflectors comprise a plurality of reflecting elements.

7. The filter of claim 6 in which each of said reflecting elements comprise conductive material deposited on said substrate.

8. The filter of claim 6 in which each of said reflecting elements comprise dielectric material of sufficient weight to reflect surface acoustic waves deposited on said substrate.

9. The filter of claim 6 in which each of said reflecting elements comprise grooves in said substrate to reflect surface acoustic waves.