Semiconductor pressure transducer

• US 4,173,900 A
• Filed: 03/06/1978
• Issued: 11/13/1979
• Est. Priority Date: 03/07/1977
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Tanabe, Masanori, Takahashi, Yukio, Matsuoka, Yoshitaka, Shimada, Satoshi, Yamada, Kazuji, Matsuda, Yasumasa, Nishihara, Motohisa, Ai, Mitsuo, Shimazoe, Michitaka, Katohgi, Katsuya
• Primary Examiner(s): Woodiel, Donald O.
• Application Number:
  US05/883,589
• Time in Patent Office: 617 Days
• Field of Search: 73/88.5 SD, 73/721, 73/727, 73/723, 73/777, 338/4, 338/42
• US Class Current: 73/727
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm
• CPC Class Codes: H01L 29/84 controllable by variation of applied mechanical force, e.g. of pressure

Abstract

A semiconductor pressure transducer comprising a disc-shaped pressure-responsive diaphragm; a pair of radial strain gauge units having a piezoresistance effect, formed by injecting an impurity in the radial direction in the surface of the diaphragm; and a pair of tangential strain gauge units having a piezoresistance effect, formed by injecting an impurity in the tangential direction in the surface of the diaphragm, wherein the distance from the pair of the radial strain gauge units to the center of the circular diaphragm is greater than the distance from the pair of the tangential strain gauge units to the center of the circular diaphragm.

Claims

1. A semiconductor pressure transducer comprising:

(a) a disc-shaped diaphragm of single crystal semiconductor material;

(b) at least one radial strain gauge unit having a piezoresistance effect, formed in the radial direction in said disc-shaped diaphragm;

(c) at least one tangential strain gauge unit having a piezoresistance effect, formed in the tangential direction of said disc-shaped diaphragm;

(d) a supporting base for supporting the outer peripheral portion of said disc-shaped diaphragm, wherein said radial strain gauge unit is disposed near the peripheral portion of said disc-shaped diaphragm, and said tangential strain gauge unit is disposed in the position near the point where a curve representing the relationship between the non-linearity and the distance from the center of said diaphragm to said tangential strain gauge unit, first intersects the straight line on which the non-linearity is substantially.

2. A semiconductor pressure transducer as claimed in claim 1, wherein

said disc-shaped diaphragm is made of N-type silicon, with its pressure-responsive surface coincident with a {110} plane;

said radial strain gauge unit is of P-type and disposed along a <

111>

axis; and

said tangential strain gauge unit is of P-type and disposed perpendicularly to the axial direction making an angle of 45°

with <

110> and

<

100>

axes.

3. A semiconductor pressure transducer as claimed in claim 1, wherein

said disc-shaped diaphragm is made of N-type silicon with its pressure-responsive surface coincident with a {111} plane and

said gauge units are of P-type.

4. A semiconductor pressure transducer comprising:

(a) a disc-shaped diaphragm of single crystal semiconductor material;

(b) at least one pair of radial strain gauge units having a piezoresistance effect formed in the radial direction in each quadrant of said disc-shaped diaphragm;

(c) at least one pair of tangential strain gauge units having a piezoresistance effect formed in the tangential direction in each quadrant of said disc-shaped diaphragm;

(d) a supporting base for supporting the outer peripheral portion of said disc-shaped diaphragm;

wherein in each quadrant of said disc-shaped diaphragm said pair of radial strain gauge units is disposed near the peripheral portion and at positions symmetrical with respect to a radial axis and wherein in said quadrant

said pair of tangential strain gauge units is disposed nearer to the center of said diaphragm than the pair of radial strain gauge units therein and at positions symmetrical with respect to said radial axis.

6. A semiconductor pressure transducer as claimed in claim 4 or 5, wherein

the distance from the center of said diaphragm to a pair of tangential strain gauge units in at least one of the four quadrants each having a pair of tangential strain gauge units, is made different from the distance from said center to a pair of tangential strain gauge units in another quadrant.

7. A semiconductor pressure transducer as claimed in claim 6, wherein

each of said radial strain gauge units comprises plural parallel strip portions,

each of said tangential strain gauge units comprises plural parallel strip portions, and

said strip portions are connected in series by low-resistance connecting portions.

5. A semiconductor pressure transducer comprising:

(a) a disc-shaped diaphragm of single crystal semiconductor material;

(b) at least one pair of radial strain gauge units having a piezoresistance effect formed in the radial direction in each quadrant of said disc-shaped diaphragm;

(c) at least one pair of tangential strain gauge units having a piezoresistance effect formed in the tangential direction in each quadrant of said disc-shaped diaphragm;

(d) a supporting base for supporting the outer peripheral portion of said disc-shaped diaphragm;

wherein in each quadrant of said disc-shaped diaphragm said pair of radial strain gauge units is disposed near the peripheral portion and at positions symmetrical with respect to a radial axis and wherein in each quadrant

the tangential strain gauge units of said pair are disposed near the positions corresponding to the point where a curve representing the relationship between the non-linearity and the distance from the center of said diaphragm to said tangential strain gauge units, first intersects the straight line on which the nonlinearity is substantially zero, and at positions symmetrical with respect to the radial axis.

8. A semiconductor pressure transducer comprising:

(a) a disc-shaped diaphragm of single crystal semiconductor material;

(b) at least one radial strain gauge unit having a piezoresistance effect, formed in the radial direction in said disc-shaped diaphragm;

(c) at least one tangential strain gauge unit having a piezoresistance effect, formed in the tangential direction of said disc-shaped diaphragm;

(d) a supporting base for supporting the outer peripheral portion of said disc-shaped diaphragm, wherein said radial strain gauge unit is disposed near the peripheral portion of said disc-shaped diaphragm and said tangential strain gauge unit is disposed nearer to the center of said diaphragm than said radial strain gauge unit; and

wherein

said disc-shaped diaphragm is made of N-type silicon, with its pressure-responsive surface coincident with a {110} plane;

said radial strain gauge unit is of P-type and disposed along a <

111>

axis; and

said tangential strain gauge unit is of P-type and disposed perpendicularly to the axis direction making an angle of 45°

with <

110> and

<

100>

axes.