Silverplated vapor deposition chamber

• US 4,173,944 A
• Filed: 02/14/1978
• Issued: 11/13/1979
• Est. Priority Date: 05/20/1977
• Status: Expired due to Term

• Current Assignee: Wacker-Chemie GmbH (Dr. Alexander Wacker Familiengesellschaft Mit Beschrã¤Nkter Haftung)
• Original Assignee: Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe MbH
• Inventors: Lorenz, Helmut, Koppl, Franz, Griesshammer, Rudolf, Hamster, Helmut
• Primary Examiner(s): Kaplan, Morris
• Application Number:
  US05/878,127
• Time in Patent Office: 637 Days
• Field of Search: 118/48-49.1, 264/81, 427/50-52, 427/69, 427/70, 427/87, 427/78, 427/91, 427/86, 427/109, 427/166, 427/167, 427/248, 427/249, 427/252, 427/253, 427/255, 148/1 NQ, 423/1 NQ, 156/1 NQ
• US Class Current: 118/719
• CPC Class Codes: C01B 33/035 by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
• CPC Class Codes: C23C 16/22 characterised by the deposition of inorganic material, other than metallic material
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: C23C 16/4418 Methods for making free-standing articles C23C16/01 takes precedence
• CPC Class Codes: C30B 25/08 Reaction chambers; Selection of materials therefor

Abstract

In a device and process for the deposition of pure semiconductor materials,specially silicon, by thermal decomposition of gaseous compounds of said semiconductor materials on carrier bodies heated to decomposition temperature, wherein the device consists of a silver plated base plate, mounting means and electrical connections thereon for heating the carrier bodies, as well as pipe connections for supply and exhaust of said gaseous compounds, and a bell-shaped cover slipped onto the base plate and forming a gas-tight seal therewith, the improvement that the area of the bell-shaped cover facing the reaction space consists of silver or silverplated steel.

Claims

1. In a device for the deposition of pure semiconductor materials, especially silicon, by thermal decomposition of gaseous compounds of said semiconductor materials on carrier bodies heated to decomposition temperature, wherein the device consists of a metallic base plate;

mounting means and electrical connections thereon for heating the carrier bodies;

pipe connections for supply and exhaust of said gaseous compounds;

a first bell-shaped cover forming a gas-tight seal with said base plate and defining a reaction chamber therewith;

the interior surfaces of said chamber being fabricated of either silver or silver plated steel;

a steel bell-shaped cover spaced from said first cover and forming a closed annular chamber therewith;

cooling means provided for said annular chamber;

an opening formed at the apex of said covers;

removable closure means disposed at said apex opening for sealing said reaction chamber; and

a finger shaped heater means alternately disposed within said chamber and sealing said opening when said closure is removed.

2. The device according to claim 1, wherein the carrier bodies consist of thin silicon rods.