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Method for enhancing the adhesion of photoresist to polysilicon

  • US 4,176,003 A
  • Filed: 02/22/1978
  • Issued: 11/27/1979
  • Est. Priority Date: 02/22/1978
  • Status: Expired due to Term
First Claim
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1. An improved process for etching a layer of silicon in the presence of an organic photomask adhered to the surface of the silicon, comprising:

  • forming a monolayer of oxide on the silicon by subjecting the silicon surface to an oxygen plasma;

    forming the organic photomask on the silicon oxide; and

    etching the masked silicon surface in freon plasma.

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