Method for enhancing the adhesion of photoresist to polysilicon
First Claim
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1. An improved process for etching a layer of silicon in the presence of an organic photomask adhered to the surface of the silicon, comprising:
- forming a monolayer of oxide on the silicon by subjecting the silicon surface to an oxygen plasma;
forming the organic photomask on the silicon oxide; and
etching the masked silicon surface in freon plasma.
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Abstract
An adhesion-enhancing technique for preparing the surface of a polycrystalline silicon body to receive organic photoresist. In an exemplary procedure, the polysilicon is placed in an oxygen plasma chamber operating under rf power of about 90 milliwatts per cubic centimeter of chamber volume and a pressure of approximately 1 torr for 10 minutes to form an adhesion-enhancing oxide monolayer on the polysilicon.
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Citations
6 Claims
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1. An improved process for etching a layer of silicon in the presence of an organic photomask adhered to the surface of the silicon, comprising:
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forming a monolayer of oxide on the silicon by subjecting the silicon surface to an oxygen plasma; forming the organic photomask on the silicon oxide; and etching the masked silicon surface in freon plasma. - View Dependent Claims (2, 3, 5)
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4. A process for etching a polysilicon surface comprising:
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subjecting the surface in a vacuum chamber to an oxide plasma provided by rf power of about 90 milliwatts per chamber cubic centimeter operating on oxygen flowing in an ambient pressure of about 0.5-2.0 torr to form a monolayer of silicon oxide on the surface; forming an organic photoresist to a predetermined masking pattern on the polysilicon surface; and etching the polysilicon surface in a vacuum chamber in the presence of the photoresist mask by exposing the masked polysilicon surface to a freon plasma generated by rf power of about 20 milliwatts per chamber cubic centimeter operating on freon flowing in an ambient pressure of about 1.5-2.5 torr. - View Dependent Claims (6)
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Specification