Method for enhancing the adhesion of photoresist to polysilicon

• US 4,176,003 A
• Filed: 02/22/1978
• Issued: 11/27/1979
• Est. Priority Date: 02/22/1978
• Status: Expired due to Term

• Current Assignee: Symbios Inc (Broadcom, Inc.)
• Original Assignee: NCR Corporation (NCR Voyix Corporation)
• Inventors: Chen, Peter C., Cohen, Jerome, Brower, Ronald W.
• Primary Examiner(s): Massie, Jerome W.
• Application Number:
  US05/879,933
• Time in Patent Office: 643 Days
• Field of Search: 156/643, 156/652, 156/653, 156/657, 156/661, 156/662, 156/659, 156/646, 156/668, 427/38, 427/39, 427/44, 427/93, 427/294, 427/299, 427/314, 427/399, 427/407 R, 252/79.1, 204/164, 96/35.1
• US Class Current: 430/313
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C
• CPC Class Codes: H01L 21/32105 Oxidation of silicon-containing layers
• CPC Class Codes: Y10S 148/053 Field effect transistors fets
• CPC Class Codes: Y10S 148/143 Shadow masking
• CPC Class Codes: Y10S 438/948 Radiation resist

Abstract

An adhesion-enhancing technique for preparing the surface of a polycrystalline silicon body to receive organic photoresist. In an exemplary procedure, the polysilicon is placed in an oxygen plasma chamber operating under rf power of about 90 milliwatts per cubic centimeter of chamber volume and a pressure of approximately 1 torr for 10 minutes to form an adhesion-enhancing oxide monolayer on the polysilicon.

Claims

1. An improved process for etching a layer of silicon in the presence of an organic photomask adhered to the surface of the silicon, comprising:

forming a monolayer of oxide on the silicon by subjecting the silicon surface to an oxygen plasma;

forming the organic photomask on the silicon oxide; and

etching the masked silicon surface in freon plasma.

2. The improved etching process of claim 1 wherein the silicon is polycrystalline silicon.

3. The improved etching process of claim 1 wherein the oxygen plasma is applied to the silicon for about ten minutes in a low pressure gas plasma chamber operating at rf power of about 90 milliwatts per chamber cubic centimeter.

5. The process of claim 1 or 4 wherein the oxygen plasma oxidation technique is employed after the etching step to remove the photoresist.

4. A process for etching a polysilicon surface comprising:

subjecting the surface in a vacuum chamber to an oxide plasma provided by rf power of about 90 milliwatts per chamber cubic centimeter operating on oxygen flowing in an ambient pressure of about 0.5-2.0 torr to form a monolayer of silicon oxide on the surface;

forming an organic photoresist to a predetermined masking pattern on the polysilicon surface; and

etching the polysilicon surface in a vacuum chamber in the presence of the photoresist mask by exposing the masked polysilicon surface to a freon plasma generated by rf power of about 20 milliwatts per chamber cubic centimeter operating on freon flowing in an ambient pressure of about 1.5-2.5 torr.

6. The process for etching a polysilicon surface according to claim 4, wherein the chamber used for oxidizing the polysilicon surface is used for etching the surface.