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Modified amorphous semiconductors and method of making the same

  • US 4,178,415 A
  • Filed: 03/22/1978
  • Issued: 12/11/1979
  • Est. Priority Date: 03/22/1978
  • Status: Expired due to Term
First Claim
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1. The method of making an amorphous semiconductor device comprising depositing on a substrate an amorphous semiconductor film including an amorphous semiconductor host matrix comprising silicon and oxygen and a modifier material comprising an alkali metal incorporated therein by codeposition of the same, and controlling the amounts of silicon and oxygen in the amorphous host matrix, wherein the silicon to oxygen ratio is represented by SiOx where x can be controlled from above 0 to 2, and the amount of alkali metal incorporated therein for controlling the energy gap and the room temperature electrical conductivity of the device.

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