Modified amorphous semiconductors and method of making the same

• US 4,178,415 A
• Filed: 03/22/1978
• Issued: 12/11/1979
• Est. Priority Date: 03/22/1978
• Status: Expired due to Term

• Current Assignee: Energy Conversion Devices
• Original Assignee: Energy Conversion Devices
• Inventors: Ovshinsky, Stanford R., Sapru, Krishna
• Primary Examiner(s): Padgett, Benjamin R.
• Assistant Examiner(s): Parr, E. Suzanne
• Application Number:
  US05/888,915
• Time in Patent Office: 629 Days
• Field of Search: 252/512, 252/500, 252/62.3 BT, 204/192 S, 427/93, 427/248 C, 357/2, 428/446
• US Class Current: 428/446
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/167 further characterised by the doping material H01L29/1604 takes precedence
• CPC Class Codes: H10N 10/855 comprising compounds containing boron, carbon, oxygen or nitrogen
• CPC Class Codes: H10N 10/8556 comprising compounds containing germanium or silicon

Abstract

An amorphous semiconductor film includes an amorphous semiconductor host matrix, such as silicon or silicon and oxygen, and a modifier material comprising an alkali metal, such as lithium, incorporated therein by codeposition of the same. The modifier material incorporated in the amorphous host matrix controls the electrical conductivity of the film and other phenomena associated therewith.

Claims

1. The method of making an amorphous semiconductor device comprising depositing on a substrate an amorphous semiconductor film including an amorphous semiconductor host matrix comprising silicon and oxygen and a modifier material comprising an alkali metal incorporated therein by codeposition of the same, and controlling the amounts of silicon and oxygen in the amorphous host matrix, wherein the silicon to oxygen ratio is represented by SiO_x where x can be controlled from above 0 to 2, and the amount of alkali metal incorporated therein for controlling the energy gap and the room temperature electrical conductivity of the device.

2. The method of claim 1 wherein the codeposition is by cosputtering.

3. The method of claim 1 wherein the alkali metal comprises lithium.

4. The method of claim 3 wherein the percent range of lithium incorporated in the amorphous semiconductor host matrix can be up to more than 28%.

5. The method of claim 1 wherein a large change in room temperature electrical conductivity can be obtained with very little change in the energy gap and the electrical activation energy.

6. The method of claim 1 wherein the electrical conductivity is by bandlike conduction.

7. An amorphous semiconductor device comprising an amorphous semiconductor film deposited on a substrate and including an amorphous semiconductor host matrix comprising silicon and oxygen and a modifier material comprising an alkali metal incorporated therein which provides a supply of electrons and having an energy gap and an increased room temperature electrical conductivity, wherein the silicon to oxygen ratio is represented by SiO_x where x can be controlled from above 0 to 2.

8. The device of claim 7 wherein the alkali metal comprises lithium.

9. The device of claim 8 wherein the percent range of lithium incorporated in the amorphous semiconductor host matrix can be up to more than 28%.

10. The device of claim 7 wherein the amount of incorporated alkali metal drastically affects the room temperature electrical conductivity with very little effect on the energy gap and the electrical activation energy.

11. The device of claim 7 wherein the electrical conduction is by bandlike conduction.

12. The device of claim 7 wherein the electrons provided by the modifier material do not change the structural matrix of the host material.

13. The device of claim 7 wherein the electrons provided by the modifier material create equal numbers of positive and negative charges in the energy gap.

14. The device of claim 13 wherein the positive and negative charges are in the top half of the energy gap.

15. The device of claim 7 wherein it has a constant electrical activation energy over 9 orders of magnitude.

16. The device of claim 7 wherein it has a high thermopower of at least 1500 microvolts per degree C at temperatures of 125°

C.

17. The device of claim 7 wherein the large energy gap and substantially dielectric material of the host matrix which has very few carriers available is transformed into a large band gap semiconductor material which can accept a continuous increase of free carriers whose supply is proportionate to the amount of modifier material incorporated therein.

18. The device of claim 7 wherein the amorphous semiconductor film comprises a material in which paired states are automatically created irrespective of whether even numbered or odd numbered modifier atoms are added.

19. The method of making an amorphous semiconductor device comprising depositing on a substrate an amorphous semiconductor film including an amorphous semiconductor host matrix comprising silicon and a modifier material incorporated therein comprising lithium by codepositing the same, and controlling the amount of lithium incorporated in the amorphous host matrix, wherein small amounts of lithium decrease the room temperature electrical conductivity, increase the electrical activation energy and energy gap, and increase the photoconductivity of the device, and large amounts of lithium increase the room temperature electrical conductivity, decrease the electrical activation energy and the energy gap, and decrease the photoconductivity of the device.

20. The method of claim 19 wherein the codeposition is by cosputtering.

21. The method of claim 19 wherein said small amounts of lithium are less than approximately 5% and said large amounts of lithium are more than approximately 5%.