Method of stabilizing semiconductor device by converting doped poly-Si to polyoxides

• US 4,179,311 A
• Filed: 09/25/1978
• Issued: 12/18/1979
• Est. Priority Date: 01/17/1977
• Status: Expired due to Term

• Current Assignee: SGS-Thomson Microelectronics (STMicroelectronics NV)
• Original Assignee: Mostek Corporation (Raytheon Technologies Corporation d/b/a RTX)
• Inventors: Athanas, Terry G.
• Primary Examiner(s): Rutledge, L. Dewayne
• Assistant Examiner(s): Roy, Upendra
• Application Number:
  US05/945,361
• Time in Patent Office: 449 Days
• Field of Search: 148/1.5, 148/187, 148/186, 357/23, 357/59, 357/91
• US Class Current: 438/297
• CPC Class Codes: H01L 21/02238 silicon in uncombined form, i.e. pure silicon
• CPC Class Codes: H01L 21/02255 formation by thermal treatment H01L21/02252 takes precedence; after treatment of an insulating film H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/02299 pre-treatment
• CPC Class Codes: H01L 21/033 comprising inorganic layers
• CPC Class Codes: H01L 21/31662 of silicon in uncombined form
• CPC Class Codes: H01L 21/32 using masks
• CPC Class Codes: H01L 21/32105 Oxidation of silicon-containing layers
• CPC Class Codes: H01L 21/32155 Doping polycristalline - or amorphous silicon layers
• CPC Class Codes: H01L 29/66575 where the source and drain or source and drain extensions are self-aligned to the sides of the gate H01L29/66606 takes precedence

Abstract

A method for making a semiconductor device is described in which polycrystalline silicon is vacuum deposited and then converted to silicon dioxide thereby providing a number of advantages over direct deposition of silicon dioxide. The method has particular applicability to isoplanar MOSFET integrated circuit manufacturing.

Claims

1. A method of stabilizing a semiconductor device comprising the steps:

(a) depositing polysilicon on a semiconductor device,

(b) doping the polysilicon with a stabilizing material, and

(c) converting the polysilicon to polyoxide.

2. The stabilization method of claim 1 wherein, in step (b) the stabilizing material is phosphorus, and in step (c) the conversion of polysilicon to polyoxide is achieved by oxidizing the polysilicon in steam in a hot wall furnace at a temperature range approximately between 800°

C. and 1200°

C. whereby the polysilicon is converted to polyoxide having the general characteristics of a thermal oxide grown directly on silicon.

3. The stabilization method of claim 1 wherein step (b) is performed at a temperature in the hot wall furnace of about 950°

C.

4. A method of making an isoplanar MOS device comprising the steps:

(a) growing a thick isoplanar field oxide around an active area in a semiconductor substrate,

(b) forming an MOS device in the active area,

(c) growing a thin thermal oxide in the active area,

(d) depositing a polysilicon layer over both the thick field oxide and the thin thermal oxide,

(e) oxidizing the entire polysilicon layer to produce a polyoxide layer, and

(f) forming contacts through windows in the polyoxide layer.

5. The method of claim 4 wherein in step (e) the polysilicon layer is oxidized in steam at a temperature range approximately between 800°

C. and 1200°

C. whereby adverse alteration of characteristics in the substrate is prevented yet a polyoxide having the general characteristics of a thermal oxide grown directly on silicon is produced.

6. The method of claim 4 further comprising the step of diffusing a stabilizing material into the polysilicon layer prior to the oxidation step (e).

7. The method of claim 4 further comprising, preceding step (a), the step of:

implanting ions in selected portions of the substrate using an implantation mask, and then using the same mask pattern to grow the isoplanar field oxide in step (a) thereby diffusing the ions to a greater depth in the substrate.