Process for fabricating thin film and glass sheet laminate
First Claim
1. A method for fabricating a thin film and glass stratum laminate comprising the steps of:
- (a) depositing applying thin film material onto a temporary substrate by a deposition process;
(b) superposing a glass stratum on said thin film;
(c) exposing said superposed glass stratum and thin film to a thermal environment which does not exceed the softening point of said glass stratum;
(d) electrostatically bonding said glass stratum and said thin film; and
(e) removing said temporary substrate from said bonded thin film and glass stratum laminate structure.
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Accused Products
Abstract
A semiconductor thin film and glass stratum laminate is formed by depositing a semiconductor thin film onto a temporary substrate having a carbon coating to which the film adheres. Processing of the semiconductor thin film for selected performance characteristics is accomplished while the film is affixed to the temporary substrate. The processed thin film is transferred and electrostatically bonded to the glass stratum by exposure to a thermal environment at or below the softening point of the glass stratum and by application of an electric potential across the thin film and glass. The bonded thin film and glass stratum laminate is separated from the temporary substrate.
66 Citations
10 Claims
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1. A method for fabricating a thin film and glass stratum laminate comprising the steps of:
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(a) depositing applying thin film material onto a temporary substrate by a deposition process; (b) superposing a glass stratum on said thin film; (c) exposing said superposed glass stratum and thin film to a thermal environment which does not exceed the softening point of said glass stratum; (d) electrostatically bonding said glass stratum and said thin film; and (e) removing said temporary substrate from said bonded thin film and glass stratum laminate structure. - View Dependent Claims (2, 3, 4, 5)
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6. A method for fabricating a semiconductor thin film and glass stratum laminate comprising the steps of:
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(a) coating a temporary substrate with a release layer; (b) depositing a semiconductor thin film onto said release layer; (c) processing said semiconductor thin film; (d) superposing a glass stratum on said deposited semiconductor thin film; (e) electrostatically bonding said glass stratum to said processed semiconductor thin film in a thermal environment which does not exceed the softening point of said glass stratum; and (f) separating said temporary substrate from said electrostatically bonded glass stratum and semiconductor film laminate. - View Dependent Claims (7)
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8. A method for fabricating a semiconductor thin film and glass stratum laminate comprising the steps of:
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(a) coating a temporary substrate with a release layer; (b) depositing a semiconductor thin film onto said release layer; (c) processing said semiconductor film; (d) superposing a glass stratum on said deposited semiconductor thin film; (e) electrostatically bonding said glass stratum to said processed semiconductor thin film in a thermal environment which does not exceed the softening point of said glass stratum; and (f) separating said temporary substrate from said electrostatically bonded glass stratum and semiconductor film laminate; (g) said electrostatic bonding step including the steps of exposing said processed semiconductor thin film and said glass stratum to a thermal environment in the range of 500°
C. to 700°
C., applying an electrical potential across said glass stratum and said semiconductor thin film, said glass stratum biased negatively with respect to said processed semiconductor thin film, and applying pressure in the range of 100 to 1000 psi to said semiconductor thin film and said glass stratum. - View Dependent Claims (9, 10)
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Specification