Substrate clamping technique in IC fabrication processes
First Claim
1. A clamp for supporting a substrate for use in semiconductor fabrication systems comprising a thermally conductive electrically insulative support, multi-electrode capacitor means mounted on the support to establish an electric field and having at least two terminals for connection to a voltage source, and thermally conductive means oriented to electrically insulate said capacitor means from said substrate while providing thermal conductivity therebetween.
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Accused Products
Abstract
An electrostatic clamping technique for use in clamping substrates in various semiconductor fabrication processes is disclosed. One example takes the form of a substrate support plate which has deposited on its working face two layers of thermally conductive, electrically insulative RTV silicone, between which layers is located an interdigital type printed circuit capacitor energized by a DC source in the kilovolt range. Secured to the back surface of the support plate is a water cooled jacket with the entire assembly adapted for location in the incident ion beam and having good thermal dissipation properties.
An alternate embodiment utilized an alumina support plate on which the capacitor of aluminum composition is deposited by vacuum evaporation; the exposed capacitor surface is rendered insulative by oxidation.
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Citations
11 Claims
- 1. A clamp for supporting a substrate for use in semiconductor fabrication systems comprising a thermally conductive electrically insulative support, multi-electrode capacitor means mounted on the support to establish an electric field and having at least two terminals for connection to a voltage source, and thermally conductive means oriented to electrically insulate said capacitor means from said substrate while providing thermal conductivity therebetween.
Specification