Integrated photovoltaic generator

• US 4,184,894 A
• Filed: 05/19/1978
• Issued: 01/22/1980
• Est. Priority Date: 05/19/1978
• Status: Expired due to Term

• Current Assignee: Amoco/Enron Solar Co.
• Original Assignee: Solarex (BP PLC)
• Inventors: Lindmayer, Joseph, Wrigley, Charles Y.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US05/907,621
• Time in Patent Office: 613 Days
• Field of Search: 136/89 P, 136/89 SJ, 136/89 MS, 357/30, 357/46, 357/47, 357/48, 357/301
• US Class Current: 136/249
• CPC Class Codes: G04C 10/02 the power supply being a radioactive or photovoltaic source
• CPC Class Codes: H01L 31/0475 PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays PV modules composed of a plurality of thin film solar cells deposited on the same substrate H01L31/046
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

Disclosed is an integrated photovoltaic generator containing a plurality of photovoltaic cells, the generator capable of producing a voltage greater than that generated by a single photovoltaic cell of comparable chemical composition. The generator comprises a wafer of semiconductor material having two major surfaces, at least one of the major surfaces including a plurality of discrete areas containing an impurity of one type of conductivity, at least the portion of the remainder of the wafer contiguous to the areas containing an impurity of an opposite conductivity type, and electrical conductor means between at least one area and the portion of the wafer containing the impurity of the opposite conductivity type.

Claims

1. A photovoltaic generator capable of producing a voltage greater than that generated by a single photovoltaic cell of comparable chemical composition, the generator comprising a wafer of semiconductor material having two major surfaces, at least one of the major surfaces including a plurality of discrete areas containing an impurity of one type of conductivity, at least a portion of the remainder of the wafer contiguous to said discrete areas containing an impurity of an opposite conductivity type, said discrete areas being at least partially covered by a layer of oxide, and electrical conductor means between at least one said discrete area and said contiguous portion of the wafer containing the impurity of the opposite conductivity type and overlying and penetrating through a portion of said oxide layer.

2. A photovoltaic generator according to claim 1 wherein said discrete areas are rectangular and extend across at least one of said major surfaces of the wafer.

3. A photovoltaic generator according to claim 2 wherein said electrical conductor means are metal bands on the major surface which extend along and bridge the photovoltaic junction between each said discrete area and said contiguous portion of the wafer.

4. A photovoltaic generator according to claim 1 wherein at least some of said discrete areas are completely bounded by semiconductor material having an impurity of opposite conductivity from the impurity of said discrete areas.

5. A photovoltaic generator according to claim 4 wherein said discrete electrical conductor means between each said discrete area and said contiguous portion of the wafer includes a plurality of discrete tabs.

6. A photovoltaic generator according to claim 1 wherein said electrical conductor means are metal bands on at least one said major surface which extend along and bridge the photovoltaic junction between each said discrete area and said contiguous portion of the wafer.

7. A photovoltaic generator according to claim 1 wherein said electrical conductor means between each said discrete area and said contiguous portion of the wafer includes a plurality of discrete tabs.