Method for producing a capacitor dielectric with inner blocking layers

• US 4,192,840 A
• Filed: 05/23/1978
• Issued: 03/11/1980
• Est. Priority Date: 08/03/1976
• Status: Expired due to Term

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Schmelz, Helmut, Schwaen, Werner
• Primary Examiner(s): Arnold, Donald J.
• Application Number:
  US05/908,665
• Time in Patent Office: 658 Days
• Field of Search: 264/61, 264/65, 264/66, 264/104, 264/105, 106/46, 317/238, 252/520
• US Class Current: 264/620
• CPC Class Codes: H01B 3/12 ceramics
• CPC Class Codes: H01G 4/1281 with grain boundary layer

Abstract

A capacitor dielectric with inner blocking layers is disclosed wherein the portion of copper located in intermediate layers between the crystallites is enriched toward the crystallite surfaces. The dielectric is produced by a heating speed of 200° to 800° C./h towards a sinter temperature, and a cooling-off speed of 10° to 100° C./h to about 350° C. below the sinter temperature.

Claims

1. A method for producing a capacitor dielectric with inner blocking layers formed of polycrystalline ceramic bodies made of a material with a perovskite structure on the basis of barium titanate and containing at least two different doping substances, one of the substances causing n-type conduction inside crystallites of the crystalline bodies and the other causing p-type conduction in a titanate intermediate phase disposed between grains of the crystallites, comprising the steps of:

(a) mixing starting components needed to make the bodies;

(b) grinding the components and reacting said components to produce a solid reaction product at 950°

C. to 1100°

C.;

(c) again grinding down the reaction product to a powder of desired particle size;

(d) forming the bodies from the powder and an inorganic binder by pressing and then subjecting the bodies to sintering in a sintering oven at 1250°

to 1450°

C.;

(e) promoting the influence of p-type doping substances by separting the p-type doping substances in the intermediate phase in the vicinity of the surfaces of the crystallite grains and at least partially recrystallizing by conducting said sintering of step (d) such that the bodies are first heated up to the sintering temperature at a heat-up rate of 200°

K./h (°

C./h) to 800°

K./h at least in the temperature range from 1000°

C. to the sintering temperature, maintaining the bodies at the sintering temperature for one to four hours, then slowly cooling the bodies down from the sintering temperature to at least 100°

K. and some 350°

K. below the sintering temperature at a rate of between 10°

K./h and 100°

K./h, after which remaining cooling to normal temperature is effected related to actual cooling conditions peculiar to the sintering oven being employed.

2. The method of claim 1 in which the starting components are mixed in oxide form.

3. The method of claim 1 in which the starting components mixed are in a form supplying oxides during heating.

4. The method of claim 1 in which the starting components mixed are in a form supplying titanates during heating.

5. The method of claim 1 in which the bodies are formed from the powder by pressure.

6. The method of claim 1 in which the bodies are formed from the powder by a slip casting process.

7. The method of claim 1 in which the p-type doping substances separated are copper ions.

8. A method as in claim 1 for the production of a capacitor dielectric in which the bodies formed from the powder are pressed and have a basic composition of 1 mole BaO, 0.875 mole TiO₂, 0.15 mole SnO₂ and additives of 0.2% by weight of Sb₂ O₃ and 0.0535% by weight of Cu, said pressed bodies being heated up for the sintering at 600°

K./h, kept at sintering temperature of 1380°

C. for three hours, and then cooled at a rate of 50°

K./h down to 1100°

C.

9. A method as in claim 1 for the production of a capacitor dielectric in which the bodies formed from the powder are pressed and have a basic composition of 1 mole BaO, 1.03 mole TiO₂ and additives of 0.15% by weight of Sb₂ O₃ and 0.04% by weight of CuO, said pressed bodies being heated up for the sintering at 200°

K./h, kept at the sintering temperature of 1360°

C. for three hours, and then cooled down to 1100°

C. at a rate of 50°

K./h.