Monolithic imager for near-IR

• US 4,198,646 A
• Filed: 10/13/1978
• Issued: 04/15/1980
• Est. Priority Date: 10/13/1978
• Status: Expired due to Term

• Current Assignee: Hughes Aircraft Company (Rtx Corporation)
• Original Assignee: Hughes Aircraft Company (Rtx Corporation)
• Inventors: Jack, Michael D., Lloyd, Randahl B., Koda, N. John, Alexander, David H., Hershman, George H.
• Primary Examiner(s): Edlow, Martin H.
• Application Number:
  US05/951,221
• Time in Patent Office: 550 Days
• Field of Search: 357/30, 357/24, 250/338
• US Class Current: 257/228
• CPC Class Codes: H01L 27/14875 Infrared CCD or CID imagers
• CPC Class Codes: H04N 5/33 Transforming infrared radiation cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20

Abstract

A monolithic imager utilizing a plurality of detector cells is formed on a common intrinsic substrate. Backside illumination in the near-IR region generates hole-electron pairs in the intrinsic material which may be depleted throughout its thickness by CCD-range voltages applied by the imager'"'"'s readout structure to a over-lying, thinly doped epitaxial layer. Minority carriers migrate toward a collection node which is formed in the epitaxial layer (and protrudes into the substrate), accumulating in an inversion layer at the surface of the epitaxial layer. The accumulated charge is advanced to an output diffusion in the epitaxial layer by means of a readout system which provides semi-random addressing of the transfer gate electrodes of the individual detector cells.

Claims

1. Apparatus for detecting the presence of near-IR radiation and producing a signal responsive thereto comprising:

(a) an intrinsic substrate of a first conductivity type, said substrate having a backside for receiving radiation and an oppositely disposed top surface;

(b) an epitaxial layer of said first conductivity type formed adjacent the top surface of said substrate, said layer containing means for collecting charge carriers and an output diffusion of a second conductivity type;

(c) a readout layer of insulative material formed adjacent said epitaxial layer, said readout layer containing means for transferring the charge carriers collected within said epitaxial layer to said output diffusion; and

(d) said readout layer additionally having means for imposing a bias so that said intrinsic substrate is depleted of substantially all of the charge carriers generated by near-IR radiation received at the backside thereof, whereby substantially all of said carriers will be collected in said epitaxial layer and transferred to the output diffusion thereof.

2. Apparatus as defined in claim 1 further characterized in that said means for collecting charge carriers additionally comprises:

(a) a collection node of a second conductivity type, said node extending throughout the depth of said epitaxial layer and protruding partially into said substrate;

(b) a layer of said first conductivity type located at the interface of said substrate and said epitaxial layer, said layer having an aperture in the region of said interface adjacent said collection node;

(c) said layer being maintained at ground potential; and

(d) said collection node being biased by means within said readout layer whereby said charge carriers are collected within said epitaxial layer adjacent said collection node.

3. Apparatus as defined in claim 2 additionally characterized in that:

(a) said output diffusion in claim 2 additionally characterized in that;

(a) said output diffusion is located above said layer;

(b) a bias of the same polarity as the bias applied to said collection node and of greater magnitude is applied to said diffusion; and

(c) said means for transferring charge carriers includes a first transfer gate located in said readout layer substantially overlying the portion of said epitaxial layer intermediate said collection node and said output diffusion whereby charge carriers are transferred from the region of said collection node to said output diffusion when a bias is applied to said first transfer gate of the same polarity and intermediate the magnitude of the biases applied to said collection node and to said output diffusion.

4. Apparatus as defined in claim 3 additionally characterized in that:

(a) said means for collecting charge carriers includes a biased drain diffusion of said second conductivity type located in said epitaxial layer where it interfaces with said readout layer, said drain diffusion being located above said layer; and

(b) said means for transferring charge carriers includes a second gate for applying a lesser bias to said epitaxial layer than is applied to said collection node and to said drain diffusion to provide a charge overflow path, whereby substantially no charge carriers will be read out of said apparatus at said output diffusion until addressed by said first gate.