Method and structure for detecting the concentration of oxygen in a substance

• US 4,198,851 A
• Filed: 05/22/1978
• Issued: 04/22/1980
• Est. Priority Date: 05/22/1978
• Status: Expired due to Term

• Current Assignee: University of Utah Research Foundation (State of Utah)
• Original Assignee: University of Utah (State of Utah)
• Inventors: Janata, Jiri
• Primary Examiner(s): Ciarlante, Anthony V.
• Application Number:
  US05/908,524
• Time in Patent Office: 701 Days
• Field of Search: 73/23, 73/27 R, 357/25, 324/71 SN, 422/98
• US Class Current: 73/31.06
• CPC Class Codes: G01N 27/4143 Air gap between gate and channel, i.e. suspended gate [SG] FETs work function measurement per se G01N27/002

Abstract

A field-effect transistor structure is utilized for detecting the concentration of oxygen in a substance to which the structure is exposed. The structure includes a semi-conductor substrate material having one doping polarity, a pair of spaced apart diffusion regions located at the surface of the substrate material and having a doping polarity opposite that of the substrate material, electrical insulator material overlying the diffusion regions and the surface of the substrate material lying therebetween, a membrane composed of an oxygen binding material overlying at least a portion of the insulator material, and a reference electrode connected in circuit with the diffusion regions and the substrate material. When the membrane is exposed to a substance containing oxygen, the work function of the membrane is changed and this change affects the conductivity between the two diffusion regions which may be measured to yield an indication of the concentration of oxygen in the substance.

Claims

1. A solid state sensor for detecting the concentration of oxygen in a substance to which the sensor is exposed, said sensor comprising

a semi-conductor substrate having a first doping polarity,

a pair of spaced-apart diffusion regions located at the surface of said substrate material and having a second doping polarity opposite that of the substrate material,

an electrical insulator material overlying at least a portion of said diffusion regions and the surface of the substrate material lying between the diffusion regions,

a membrane overlying at least a portion of said insulator material, said membrane comprising a metallo porphyrin included in a polymeric matrix whose work function changes with a change in the concentration of molecular oxygen bound to the membrane, and

a reference electrode connected in circuit with said diffusion regions through a potential source,

the conductivity between said diffusion regions thereby being a measure of the work function change of said membrane which, in turn, is a measure of the concentration of oxygen to which the membrane is exposed.

2. A sensor as in claim 1 wherein said substituted metallo porphyrin comprises a 1-(2-phenyl-ethyl)-imidazolecarbonmonoxyheme diethyl ester imbedded in an amorphous mixture of polystyrene and 1-(2-phenyl-ethyl)-imidazole.

3. A method of detecting the concentration of oxygen in a substance comprising

providing a field-effect transistor transducer which includes

a semi-conductor substrate having a first doping polarity,

a pair of spaced-apart diffusion regions located at the surface of said substrate material and having a second doping polarity opposite that of the substrate material,

an electrical insulator material overlying at least a portion of said diffusion regions and the surface of the substrate material lying between the diffusion regions,

a membrane overlying at least a portion of said insulator material, said membrane comprising a substituted metallo porphyrin included in a polymeric matrix, and

a reference electrode connected in circuit with said diffusion regions through a potential source,

exposing said membrane and reference electrode to a substance containing oxygen, and

measuring the conductivity between the two diffusion regions of the transducer.