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Method of integrating semiconductor components

  • US 4,199,860 A
  • Filed: 11/11/1977
  • Issued: 04/29/1980
  • Est. Priority Date: 11/11/1977
  • Status: Expired due to Term
First Claim
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1. A method of integrating semiconductor components comprising:

  • providing as starting bulk material a semiconductor single crystal body of low conductivity and having opposed major surfaces,producing a collector region of the opposite conductivity at a first location in one of said surfaces and defining a collector region of said starting material at a second location in said one surface spaced from said first location,insulatedly attaching a wafer handle to said one surface,producing a base region, a base contact portion in the base region and an emitter region in the second major surface at each of said first and second spaced locations, the base contact portion at each location being produced simultaneously with the emitter region at the other location,applying a Schottky barrier metallization to said starting material at one of said spaced locations on said second surface to form by virtue of the low conductivity of said material an integrated Schottky barrier,applying associated terminal metallizations, andanisotropically etching into said second surface as far as said one surface to form boundaries for surrounding said locations to thereby dielectrically isolate a complementary pair of semiconductor components in mesa form.

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