Liquid crystal cell having an insulating layer of a silicon oxide base

• US 4,201,453 A
• Filed: 05/18/1978
• Issued: 05/06/1980
• Est. Priority Date: 05/20/1977
• Status: Expired due to Term

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Kobale, Manfred, Pink, Hans, Schaefer, Helwig
• Primary Examiner(s): Bauer, Edward S.
• Application Number:
  US05/907,004
• Time in Patent Office: 719 Days
• Field of Search: 350/339, 350/340, 350/320, 350/341
• US Class Current: 349/124
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/1337 Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
• CPC Class Codes: Y10S 359/90 Methods

Abstract

A liquid crystal cell having a pair of spaced carrier plates with inner surfaces forming a cavity for receiving a layer of liquid crystal material, each of said inner surfaces being provided with a conductive coating and at least one of the carrier plates having its conductive coating covered with an insulated layer of silicon oxide base characterized by the insulating layer containing an additive selected from a group consisting of boron oxide, tin oxide, titanium oxide and mixtures thereof so that the insulating layer causes homeotropic orientation of the molecules of the liquid crystal layer.

Claims

1. In a liquid crystal cell having a pair of spaced carrier plates with inner surfaces forming a cavity for receiving a layer of liquid crystal material, each of said inner surfaces being provided with conductive coatings, at least one of the carrier plates having its conductive coating provided with an insulating layer of a silicon oxide base with the improvement comprising wherein the insulating layer of silicon oxide contains an additive selected from a group consisting of boron oxide, tin oxide, titanium oxide and mixtures thereof so that the insulating layer causes homeotropic orientation of the molecules of the liquid crystal layer.

2. In a liquid crystal cell according to claim 1, wherein the silicon oxide has a chemical formula SiO_x with 1.5<

x≦

2.

3. In a liquid crystal cell according to claim 2, wherein x=2.

4. In a liquid crystal cell according to claim 1, wherein the additive is boron oxide and is present in the insulating layer at a maximum of 10 weight percent of the insulating layer.

5. In a liquid crystal cell according to claim 1, wherein the additive is tin oxide and is present in the insulating layer at a maximum amount of 10 weight percent of the insulating layer.

6. A process for production of an insulating layer, which promotes homeotropic orientation of a liquid crystal cell comprising the steps of providing a solution containing silicon and an additive selected from a group consisting of boron, tin, titanium and mixtures thereof in a desired ratio to each other, applying the solution to the carrier plate of the liquid crystal cell, which plate is to be provided with the insulating layer, and finally, transforming the applied solution into the insulating layer by thermal decomposition to form the insulating layer composed of silicon oxide and oxides of the additive.

7. A process according to claim 6, wherein the step of applying the solution is accomplished by submerging the carrier plate into the solution.

8. A process according to claim 6, wherein the step of applying the solution comprises spraying the solution on a surface of the carrier plate.

9. A process according to claim 6, wherein the solution contains a solvent selected from a group consisting of relatively low molecular weight alcohols, esters of relatively low molecular weight carboxylic acids and relatively low molecular weight alcohols, and mixtures of said alcohols and said esters.

10. A process according to claim 9, wherein the molecules of the relatively low molecular weight carboxylic acids and relatively low molecular weight alcohols contain a carbon chain having a maximum of four carbon atoms.

11. A process according to claim 6, wherein the step of providing the solution of silicon and an additive includes reacting elements of silicon and the additive with a relatively low molecular weight monocarboxylic acid to produce compounds, and dissolving said compounds in said solution.

12. A process according to claim 11, wherein the molecules of the low molecular weight carboxylic acids contain a carbon chain comprising a maximum of four carbon atoms.

13. A process according to claim 6, wherein the step of providing the solution of silicon and an additive includes providing halides of the silicon and the additive, said halides having anions which are at least partially substituted by acid radicals of relatively low molecular weight carboxylic acids, and dissolving said halides in said solution.

14. A process according to claim 13, wherein the molecules of the low molecular weight carboxylic acids contain a carbon chain comprising a maximum of four carbon atoms.

15. A process according to claim 6, wherein the step of providing the solution of silicon and an additive, comprises providing halides of silicon and the additive, said halides having anions which are at least partially substituted by radicals selected from a group consisting of (a) relatively low molecular weight monocarboxylic acids and hydroxyl radicals and (b) relatively low molecular weight alcohols.

16. A process according to claim 15, wherein the molecules of the low molecular weight carboxylic acids, and low molecular weight alcohols contain a carbon chain comprising a maximum of four carbon atoms.