Piezoresistive silicon strain sensors and pressure transducers incorporating them

• US 4,203,327 A
• Filed: 06/29/1978
• Issued: 05/20/1980
• Est. Priority Date: 06/29/1978
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Singh, Gurnam
• Primary Examiner(s): Woodiel, Donald O.
• Application Number:
  US05/920,538
• Time in Patent Office: 691 Days
• Field of Search: 73/721, 73/727, 73/754, 73/777, 338/4, 338/3, 338/2, 338/42, 357/26
• US Class Current: 73/721
• CPC Class Codes: G01L 13/025 using diaphragms
• CPC Class Codes: G01L 19/0038 being part of the housing other details about the housing G01L19/14
• CPC Class Codes: G01L 19/0645 using isolation membranes, specially adapted for protection
• CPC Class Codes: G01L 19/147 Details about the mounting of the sensor to support or covering means
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm
• CPC Class Codes: G01L 9/0083 using variations in ohmic resistance

Abstract

Each sensor consists of a spinel substrate in the form of a beam or a diaphragm which carries a pattern of a plurality of doped silicon piezoresistive resistors. The latter are formed from layers of doped silicon, each of which layers has been epitaxially grown on a corresponding surface of the spinel substrate. The spinel minimizes the occurrence of leakage currents with respect to the resistors, while cooperating with the silicon to provide a high degree of stress transmission to the resistors. The beam form of sensor is shown as the sensor member of a differential fluid pressure to electric signal transducer, wherein the sensor is deflected and strained in accordance with the differential pressure to be sensed.

Claims

1. A silicon strain sensor, comprising

a body of spinel, and

a silicon piezoresistive element grown on said body to enable a change in the stress in said body to be efficiently transmitted to said element,

whereby the latter exhibits resistance changes which are a function of changes in the strain in said body.

2. A silicon strain sensor, comprising

a body of spinel, and

a plurality of piezoresistive silicon elements grown on said body to enable changes in the stress in said body to produce corresponding changes in the strains and resistances of said elements.

3. A piezoresistive strain sensor, comprising

a body of spinel, and

an epitaxially grown layer of silicon on a surface of said body, said layer being in the form of at least one piezoresistive element.

4. A piezoresistive silicon strain sensor, comprising

a body of spinel, and

an epitaxially grown layer of doped silicon on a surface of said body, said layer being in the form of at least one piezoresistive element having a resistivity dependent upon the doping level of said layer.

5. A piezoresistive silicon strain sensor, comprising

a body of spinel, and

a layer of silicon in the (110) crystallographic plane epitaxially grown on a surface of said body, said layer being in the form of at least one piezoresistive element formed in the <

111>

crystallographic direction.

6. A piezoresistive silicon strain sensor, comprising

a spinel beam having a pair of oppositely disposed faces, and

an epitaxially grown layer of silicon on each of said faces, each of said layers being in the form of at least one piezoresistive element.

7. A piezoresistive silicon strain sensor, comprising

a spinel beam having a pair of oppositely disposed faces,

an epitaxially grown layer of silicon on one of said faces, said layer being in the form of first and second piezoresistive resistors, and

an epitaxially grown layer of silicon on the other of said faces, the last-mentioned layer being in the form of third and fourth piezoresistive resistors oriented in the same crystallographic direction as said first and second resistors are oriented.

8. A sensor as specified in claim 7, wherein

said layers are in the (110) crystallographic plane, and

said resistors lie in the <

111>

crystallographic direction.

9. A piezoresistive silicon strain sensor, comprising

a spinel diaphragm having a pair of oppositely disposed faces, and

an epitaxially grown layer of silicon on one of said faces, said layer being in the form of at least one piezoresistive element.

10. A piezoresistive silicon strain sensor, comprising

a spinel diaphragm having a pair of oppositely disposed faces, and

an epitaxially grown layer of silicon on one of said faces, said layer being in the form of first and second piezoresistive resistors oriented substantially in the longitudinal crystallographic direction and third and fourth piezoresistive resistors oriented substantially in the transverse crystallographic direction.

11. A sensor as specified in claim 10, wherein

said layer is in the (110) crystallographic plane,

said first and second resistors lie substantially in the <

111>

crystallographic direction, and

said third and fourth resistors lie substantially in the <

112>

crystallographic direction.

12. A pressure to electrical signal transducer including

a spinel beam having a pair of oppositely disposed faces and having an epitaxially grown layer of silicon in the form of a piezoresistive resistor on one of said faces,

support means attached to one end of said beam to cantilever said beam from said support means,

means responsive to fluid pressure connected to the other end of said beam to deflect said other end and to strain said beam and said resistor by an amount dependent upon said pressure, and

terminals electrically connected to said resistor, between which terminals the resistance is dependent upon the extent of said deflection and straining of said beam and said resistor.