Graded band gap multi-junction solar energy cell

• US 4,206,002 A
• Filed: 12/21/1977
• Issued: 06/03/1980
• Est. Priority Date: 10/19/1976
• Status: Expired due to Term

• Current Assignee: University Of Pittsburgh (University of Pittsburgh of The Commonwealth System of Higher Education)
• Original Assignee: University Of Pittsburgh (University of Pittsburgh of The Commonwealth System of Higher Education)
• Inventors: Meiksin, Zvi H., Narasimhan, K. S. V. L., Butera, Richard A., Sabnis, Ananta G.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US05/862,842
• Time in Patent Office: 895 Days
• Field of Search: 136/89 SG, 136/89 SJ, 136/89 TF, 136/89 MS, 136/89 GA, 357/30, 357/37, 357/60, 357/61, 357/88, 148/175
• US Class Current: 136/249
• CPC Class Codes: H01L 31/065 the potential barriers being only of the graded gap type
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y10S 438/936 Graded energy gap

Abstract

The specification discloses a solar cell having a graded band gap and a plurality of alternately active and inactive p-n junctions. The cell has a gradually changing monocrystalline structure of IIIA-VA compounds. The graded band gaps of the cell are the result of the gradually changing chemical composition of the cell'"'"'s monocrystalline structure. The junctions are produced by conventional doping techniques.

Claims

1. A solar cell comprising:

a. a substrate layer of a crystalline material (compound) selected from the group consisting of compounds of group III-A-V-A elements (element compounds); and

b. a monocrystalline layer on said substrate

(i) composed of material selected from the group consisting of III-A-V-A compounds (element compounds) such that the composition of the monocrystalline layer is continuously changing and of the general form A_1-x A'"'"'_x B_1-y B'"'"'_y where A and A'"'"' are group IIIA elements selected from the group consisting of Al, Ga and In, B and B'"'"' are group VA elements selected from the group consisting of P, As and Sb, 0≦

x≦

1 and 0≦

y≦

1 whereby progressively narrower (continuously changing) band gaps are provided;

(ii) suitably doped to produce a plurality of alternately active and inactive junctions; and

(iii) having a p-region on one side and n-region on the other side of each inactive junction, and an active region about each active junction, said active region being bounded by an n-region and a p-region such that

(a) in each p-region and in each n-region the flow of carriers is dominated by the region'"'"'s concentration gradient;

(b) (in each and every p-region and in n-region) the net current (density) throughout the cell is the same;

(c) the electric field in each active region is much stronger than the electric fields in the p-region and n-region adjacent to it; and

(d) the width (length) of each (each) region between active junctions substantially equals the diffusion length of the electrons and holes generated in (each) each said region.

2. The solar cell claimed in claim 1 having been produced with molecular beam epitaxy.

3. The solar cell claimed in claim 1 wherein said monocrystalline layer comprises in sequence doped cross-sectional areas of GaP₀.85 Sb₀.15, GaP₀.67 Sb₀.32, GaP₀.47 Sb₀.53, GaP₀.28 Sb₀.72, GaP₀.09 Sb₀.91, and Ga₀.75 In₀.25 Sb.

4. The solar cell claimed in claim 1 wherein said monocrystalline layer comprises in sequence doped cross-sectional areas of Al₀.8 Ga₀.2 As, Al₀.44 Ga₀.56 As, GaAs, GaAs₀.6 Sb₀.4, GaAs₀.24 Sb₀.76, and Ga₀.54 In₀.46 Sb.

5. The solar cell claimed in claim 1 also comprising contacts attached to the substrate and the monocrystalline compound.