Polycrystalline thin film CdS/CdTe photovoltaic cell
First Claim
1. In a photovoltaic cell comprisingfirst and second contiguous crystalline layers containing, respectively, p-type cadmium telluride and n-type cadmium sulfide, and electrodes in operative, low-impedance contact with at least part of said layers,the improvement wherein both said cadmium telluride and said cadmium sulfide are polycrystalline, and together said layers contain oxygen atoms in an amount that is effective to produce a cell having a conversion efficiency that is enhanced over the conversion efficiency of a cell that is produced without said oxygen atoms present.
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Abstract
A photovoltaic cell and a process of making and using it are disclosed wherein extremely thin semiconductor layers are provided through the use of polycrystalline CdS and CdTe. The cell has conversion efficiencies as high as 6% or more when exposed to AM2 light.
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Citations
31 Claims
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1. In a photovoltaic cell comprising
first and second contiguous crystalline layers containing, respectively, p-type cadmium telluride and n-type cadmium sulfide, and electrodes in operative, low-impedance contact with at least part of said layers, the improvement wherein both said cadmium telluride and said cadmium sulfide are polycrystalline, and together said layers contain oxygen atoms in an amount that is effective to produce a cell having a conversion efficiency that is enhanced over the conversion efficiency of a cell that is produced without said oxygen atoms present.
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5. In a photovoltaic cell comprising
first and second contiguous crystalline layers containing, respectively, p-type cadmium telluride and n-type cadmium sulfide, and electrodes in operative, low-impedance contact with at least part of said layers, the improvement wherein said layers are polycrystalline and the total combined thickness of said layers does not exceed about 10 microns, at least one of said layers containing oxygen atoms in an amount that is effective to produce a cell having a conversion efficiency that is enhanced over the conversion efficiency of a cell that is produced without the oxygen atoms in said layer.
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13. A cell for converting incident radiation into electricity, comprising
first and second contiguous polycrystalline layers containing, respectively, p-type cadmium telluride and n-type cadmium sulfide, and electrodes in operative, low-impedance contact with at least part of said layers, at least one of said electrodes being transparent or semi-transparent to said incident radiation, said cell being further characterized by a conversion efficiency of at least about 6.0% when exposed to AM2 light.
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14. A cell for converting incident radiation into electricity, comprising
first and second contiguous polycrystalline layers containing, respectively, p-type cadmium telluride and n-type cadmium sulfide, and electrodes in operative, low-impedance contact with at least part of said layers, at least one of said electrodes being transparent or semitransparent to said incident radiation, said cell being further characterized by a combined thickness of said layers that is no greater than about 10 microns and a conversion efficiency of at least about 6% when exposed to AM2 light.
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15. In a photovoltaic cell comprising
first and second contiguous crystalline layers containing, respectively, n-type cadmium sulfide and p-type cadmium telluride, and electrodes in operative, low-impedance contact with at least part of said layers, the improvement wherein both said cadmium telluride and said cadmium sulfide are polycrystalline, at least one of said layers having been formed in an oxygen-containing atmosphere for a time and at a temperature, and in an amount of oxygen, sufficient to provide a conversion efficiency that is enhanced over the conversion efficiency of a cell produced identically but without said at least one layer having been formed in said oxygen-containing atmosphere.
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16. In a photovoltaic cell comprising
first and second contiguous polycrystalline layers containing, respectively, n-type cadmium sulfide and p-type cadmium telluride, and electrodes in operative, low-impedance contact with at least part of said layers, the improvement wherein the combined thickness of said layers does not exceed about 10 microns, at least one of said layers having been formed in an oxygen-containing atmosphere for a time and at a temperature, and in an amount of oxygen, sufficient to provide a conversion efficiency that is enhanced over the conversion efficiency of a cell produced identically but without said at least one layer having been formed in said oxygen-containing atmosphere.
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21. In a process for manufacturing a photovoltaic cell by depositing, in the vapor phase, contiguous polycrystalline layers of n-type cadmium sulfide and p-type cadmium telluride and securing an electrode to at least a portion of each of said layers,
the improvement comprising depositing at least one of said layers in an oxygen-containing atmosphere for a time and at a temperature, and in an amount of oxygen, which are sufficient to provide a conversion efficiency that is enhanced over the efficiency of a cell produced without said oxygen atmosphere.
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25. A process of converting incident radiation into electrical power, comprising the steps of
(a) exposing to said radiation, a photovoltaic cell comprising first and second contiguous polycrystalline layers containing, respectively, n-type cadmium sulfide and p-type cadmium telluride, said layers together containing oxygen atoms in an amount that is effective to produce a cell having a conversion efficiency that is enhanced over the conversion efficiency of a cell that is produced without said oxygen atoms, and electrodes in operative, low-impedance contact with at least part of said layers, at least one of said electrodes being transparent or semi-transparent to said incident radiation; - and
(b) drawing off power from said cell in proportion to said enhanced conversion efficiency.
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26. A process of converting incident radiation into electrical power, comprising the steps of
(a) exposing to said radiation, a photovoltaic cell comprising first and second contiguous polycrystalline layers containing, respectively, n-type cadmium sulfide and p-type cadmium telluride, at least one of said layers being formed in an oxygen-containing atmosphere for a time and at a temperature, and in an amount of oxygen, which are sufficient to provide a conversion efficiency that is enhanced over the conversion efficiency of a cell produced identically but without being formed in said oxygen-containing atmosphere; - and electrodes in operative, low-impedance contact with at least part of said layers, at least one of said electrodes being transparent of semitransparent to said incident radiation;
the total combined thickness of said layers not exceeding about 10 microns; and(b) drawing off power from said cell in proportion to said enhanced conversion efficiency.
- and electrodes in operative, low-impedance contact with at least part of said layers, at least one of said electrodes being transparent of semitransparent to said incident radiation;
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27. In a photovoltaic cell comprising
first and second contiguous crystalline layers containing, respectively, p-type cadmium telluride and n-type cadmium sulfide, and electrodes in operative, low-impedance contact with at least part of said layers, the improvement wherein both said cadmium telluride and said cadium sulfide are polycrystalline, and together said layers contain oxygen atoms in an amount that is effective to produce a cell having a conversion efficiency that is enhanced over the conversion efficiency of a cell generally identical in structure but containing only the amount of oxygen atoms in said layers that is present when the layers are formed in an atmosphere that has an oxygen partial pressure of less than 0.01 Torr.
Specification