Charge coupled device with buried zones in a semiconductor substrate for use especially as a light sensor

• US 4,208,668 A
• Filed: 03/09/1978
• Issued: 06/17/1980
• Est. Priority Date: 03/29/1977
• Status: Expired due to Term

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Krimmel, Eberhard
• Primary Examiner(s): Munson, Gene M.
• Application Number:
  US05/884,902
• Time in Patent Office: 831 Days
• Field of Search: 357/24, 357/91, 307/221 D
• US Class Current: 257/251
• CPC Class Codes: H01L 27/148 Charge coupled imagers individual charge coupled devices H01L29/765
• CPC Class Codes: H01L 29/1091 of charge coupled devices
• CPC Class Codes: H01L 29/765 Charge-coupled devices peripheral circuits for CCD storage devices G11C19/285
• CPC Class Codes: H01L 29/76833 Buried channel CCD

Abstract

A CCD is disclosed having a semiconductor substrate of a first conductivity type with a plurality of electrodes serially located above one planar surface thereof, a plurality of buried doped zones of a conductivity type opposite to that of the substrate and located in a plane spaced below a surface of the substrate. The rear edge of each electrode is in line with the front edge of a buried doped zone. The front edge of the same electrode overlaps the rear end of the next succeeding buried doped zone. The upper front corner of each electrode is bevelled.

Claims

1. A charge coupled device (CCD) comprising a semiconductor substrate of a first conductivity type and a plurality of electrodes arranged in spaced series relationship above said substrate, to form a plurality of capacitors therewith, said substrate having therein a plurality of buried, doped zones of a second conductivity type, also arranged in spaced series relationship, said electrodes being adapted to have potentials applied thereto to store and transfer charges in a given direction, said buried zones being so arranged with respect to said electrodes that, considered in the charge shift direction in use of the device, the front edge of any electrode of the series lies directly above the rear edge of a buried zone considered in the direction normal to the substrate surface, while the rear edge of said electrode overlaps the front edge of the next buried layer in the series, said electrodes being formed on said substrate as Schottky electrodes.

2. A charge coupled device (CCD) comprising a semiconductor substrate of a first conductivity type and a plurality of electrodes arranged in spaced series relationship above said substrate, to form a plurality of capacitors therewith, said substrate having therein a plurality of buried, doped zones of a second conductivity type, also arranged in spaced series relationship, said electrodes being adapted to have potentials applied thereto to store and transfer charges in a given direction, said buried zones being so arranged with respect to said electrodes that, considered in the charge shift direction in use of the device, the front edge of any electrode of the series lies directly above the rear edge of a buried zone considered in the direction normal to the substrate surface, while the rear edge of said electrode overlaps the front edge of the next buried layer in the series, the distance of said buried, doped zones from one another being approximately 500 nm.