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Fusible-link semiconductor memory

  • US 4,209,894 A
  • Filed: 04/27/1978
  • Issued: 07/01/1980
  • Est. Priority Date: 04/27/1978
  • Status: Expired due to Term
First Claim
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1. A method of making a semiconductor device including the steps of applying a coating of photoresist to define a plurality of small segments, depositing a thin film of conductive material on said face and over the small segments, patterning the film to leave elongated strips extending across the segments of photoresist and exposing parts of the segments, thereafter removing the segments of photoresist to leave raised portions in the elongated strips and selectively applying excess current to some of the elongated strips to fuse the raised portions.

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