Selective chemical sensitive FET transducer

• US 4,218,298 A
• Filed: 11/03/1978
• Issued: 08/19/1980
• Est. Priority Date: 11/04/1977
• Status: Expired due to Term

• Current Assignee: Kuraray Company Limited, Tadayuki Matsuo
• Original Assignee: Kuraray Company Limited, Tadayuki Matsuo
• Inventors: Esashi, Masayoshi, Shimada, Kiyoo, Matuo, Masayuki
• Primary Examiner(s): Kaplan, G. L.
• Application Number:
  US05/957,433
• Time in Patent Office: 655 Days
• Field of Search: 357/25, 128/2 E, 204/195 R, 204/195 P, 204/195 M, 204/195 S, 204/195 B, 204/1 T
• US Class Current: 257/253
• CPC Class Codes: G01N 27/414 Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Abstract

A selective chemical sensitive field-effect transistor device for use in detection and measurement of chemical properties of substances to which the device is exposed is disclosed. The chemical sensitive FET device comprises a semiconductor substrate, at least one pair of spaced apart diffusion layers formed on one surface of the semiconductor substrate and forming source and drain regions, respectively, and a double layer structure consisting of a silicon oxide layer and an electrically insulating layer overlaying the silicon oxide layer. A gate region located on a portion of the surface of the semiconductor substrate between the diffusion layers is overlaid with a chemical selective membrane adapted to interact with certain substances. A method for the manufacture of the above described FET device is also disclosed.

Claims

1. A chemical sensitive field-effect transistor device which comprises:

an elongated semiconductor substrate having one surface formed with a plurality of diffusion layers, said substrate constituted by a reduced width portion extending from one of the opposed ends of the substrate to a substantially intermediate portion thereof and an enlarged width portion extending from the substantially intermediate portion to the other of the opposed ends thereof,

a gate region defined between the diffusion layers on the surface of said elongated substrate and adjacent the free end of the reduced width portion thereof,

electrodes electrically connected to the respective diffusion layers at a position adjacent the opposite end of said diffusion layers remote from said gate region,

source and drain regions formed on the surface portion of said substrate where the gate region is formed and extends between the reduced end enlarged width portions of said substrate,

a double layered structure consisting of a layer of SiO₂ and an electrically insulating layer of Si₃ N₄ overlaying said SiO₂ layer, said double layered structure covering substantially the reduced width portion of said substrate in its entirety, and said double layered structure covers the enlarged portion of said substrate at its opposed surfaces while the opposed side faces of the enlarged width portion are uncovered to allow the substrate to be exposed to the outside, said electrically insulating layer of said double layered structure having an impermeability to a solution containing a chemical substance which may affect the electric field developed in an electroconductive channel defined between the diffusion layers at the gate region.

2. A chemical sensitive field-effect transistor device as claimed in claim 1, adapted to detect and measure chemical properties of CO₂ gas, wherein at least said gate region is inserted in electrolyte solution together with a reference electrode made of silver-silver chloride, said electrolyte solution being enclosed by a water-proof film of synthetic resin.

3. A chemical selective field-effect transistor device as claimed in claim 2, wherein said synthetic resinous water-proof film is made of silicone rubber.

4. A chemical selective field-effect transistor device as claimed in claim 1, wherein there is provided a plurality of gate regions each located between the adjacent two of the diffusion layers at a position adjacent said one end of said diffusion layers.

5. A chemical selective field-effect transistor device as claimed in claim 4, wherein there is employed a plurality of chemical selective membranes equal in number to the number of the gate regions, each of said chemical selective membranes overlaying the electrically insulating layer at such gate region and being capable of interacting with a particular chemical substance to which the device is exposed.

7. A chemical sensitive field-effect transistor device as claimed in claim 1 or claim 6, wherein said electrically insulating layer is made of titanium oxide.

8. A chemical sensitive field-effect transistor device as claimed in claim 1 or claim 6, wherein said electrically insulating layer is made of aluminum oxide.

9. A chemical sensitive field-effect transistor device as claimed in claim 1 or claim 6, further comprising a chemical selective membrane overlaying said electrically insulating layer at the gate region, said chemical selective membrane being capable of interacting with a certain chemical substance, to which the device is exposed, to thereby modulate said electric field in the electroconductive channel according to characteristics peculiar of such chemical substance.

10. A chemical sensitive field-effect transistor device as claimed in claim 9, wherein said chemical selective membrane is a reaction membrane capable of producing a reaction product when reacting the particular chemical substance.

11. A chemical sensitive field-effect transistor device as claimed in claim 9, wherein said chemical selective membrane is one member selected from the group consisting of silver halide, doped oxide, noble metal, metallic oxide and an organic material containing a ligand selectively sensitive to the particular chemical substance.

6. A chemical sensitive field-effect transistor device which comprises:

an elongated semiconductor substrate made of silicon having a predetermined doping polarity, said substrate being constituted by a reduced width portion extending from one of the opposed ends of the substrate to a substantially intermediate portion thereof and an enlarged width portion extending from the substantially intermediate portion to the other of the opposed ends thereof,

a plurality of elongated, spaced apart diffusion layers extending lengthwise of said semiconductor substrate and located at one surface of said substrate, said diffusion layers having a doping polarity opposite to that of the semiconductor substrate,

a surface region of said semiconductor substrate which is located between the diffusion layers adjacent the free end of the reduced width portion of said substrate being defined as a gate region,

an electroconductive channel stopper layer formed on said surface region of the semiconductor substrate and extending between the diffusion layers excepting a position adjacent the gate region, said channel stopper layer having a doping polarity opposite to that of the diffusion layers,

source and drain regions formed on the surface portion of the substrate where the gate region is formed and extends between the reduced and enlarged width portions of said substrate,

a double layered structure consisting of a layer of silicon dioxide (SiO₂) and an electrically insulating layer of silicon nitride (Si₃ N₄) external to said silicon dioxide layer and having an impermeability to a solution containing a chemical substance which may, when the device is exposed thereto, affect the electric field developed in an electroconductive channel defined between the diffusion layers at the gate region, overlaying the surface area of the semiconductor substrate such that at the reduced width portion of the substrate it is entirely covered by said double layered structure, whereas the enlarged width portion of the substrate is covered with said double layered structure at its opposed surfaces while the opposed side faces of the enlarged width portion are uncovered to allow the substrate to be exposed to the outside, and

source and drain electrodes positioned through the electrically insulating layer and electrically connected to the respective diffusion layers at a position adjacent the opposed end of said diffusion layers remote from said gate region.