Light-emitting and light-receiving diode particularly for optical telecommunications

• US 4,218,692 A
• Filed: 10/12/1978
• Issued: 08/19/1980
• Est. Priority Date: 10/18/1977
• Status: Expired due to Term

• Current Assignee: Thomson-CSF
• Original Assignee: Thomson-CSF
• Inventors: de Cremoux, Baudouin
• Primary Examiner(s): Edlow, Martin H.
• Application Number:
  US05/950,792
• Time in Patent Office: 677 Days
• Field of Search: 357/19, 357/17, 357/18, 357/58, 357/16
• US Class Current: 257/85
• CPC Class Codes: G02B 6/4246 Bidirectionally operating package structures
• CPC Class Codes: H01L 31/109 the potential barrier being of the PN heterojunction type
• CPC Class Codes: H01L 31/125 Composite devices with photosensitive elements and electroluminescent elements within one single body
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H04B 10/43 using a single component as both light source and receiver, e.g. using a photoemitter as a photoreceiver

Abstract

A light-emitting and light receiving diode comprises an active zone which, in the emitting mode, is the seat of a strong current. The emission surface has a central semiconducting region which channels the current lines and an insulating region transparent to light. In the receiving mode, the photons pass through the entire receiving surface which is none other than the emission surface and the active zone has a sufficient thickness and a sufficiently low doping concentration to be in the space charge state.

Claims

1. A diode for emitting and detecting light of predetermined wavelength, comprising:

a substrate made of a semiconductor material having a first conductivity type;

a first semiconductor layer having said first conductivity type, being doped less heavily than and being disposed on said substrate, said first layer having a forbidden band transparent to said light;

a second layer, disposed on said first layer, made of a semiconductor material different from the semiconductor material of said first layer and being doped in said first conductivity type less heavily than said substrate, said second layer having a forbidden band suitable for absorbing and emitting said light of predetermined wavelength;

a third layer disposed on said second layer, made of a semiconductor material different from the semiconductor material of said second layer, and doped in a second conductivity type opposite to said first conductivity type less heavily than said substrate, said third layer having a forbidden band having a different value than the forbidden band of said second layer, said third layer forbidden band being transparent to said light; and

a fourth layer disposed on said third layer made of a semiconductor material different from the semiconductor materials of said second and third layers, and doped in said second conductivity type less heavily than said substrate, said fourth layer having a forbidden band of different value than said second and third layers, said fourth layer forbidden band being transparent to said light, said fourth layer including a central region and a peripheral region, said peripheral region having a greater resistance than said central region so that most of the current flowing through said fourth layer flows through said central region.

3. A diode as claimed in claim 1, wherein said fourth layer peripheral region is rendered insulating by a previous protonic implantation.

4. A diode as claimed in claim 1, wherein the material of said first, second, third and fourth layers is:

space="preserve" listing-type="equation">Ga.sub.1-x Al.sub.x As

wherein x for said second layer is different than x for the other layers and is between zero and 1.

6. A diode as claimed in claim 4, wherein said layers have the following composition:

p-doped Ga₀.7 Al₀.3 As for the first layer;

p-doped Ga₀.95 Al₀.05 As for the second layer;

n-doped Ga₀.7 Al₀.3 As for the third layer;

n-doped Ga₀.9 Al₀.1 As for the fourth layer

the structure of the diode having been submitted to a mesa etching.

2. A diode for emitting and detecting light of predetermined wavelength comprising:

a substrate made of a semiconductor material having a first conductivity type;

a first semiconductor layer having said first conductivity type, being doped less heavily than and being disposed on said substrate, said first layer having a forbidden band transparent to said light;

a second layer, disposed on said first layer, made of a semiconductor material different from said first layer and being doped in a second conductivity type opposite to said first conductivity type less heavily than said substrate, said second layer having a forbidden band suitable for absorbing and emitting said light of predetermined wavelength;

a third layer disposed on said second layer, made of a semiconductor material different from the semiconductor material said second layer, and doped in said second conductivity type type less heavily than said substrate, said third layer having a forbidden band having a different value than the forbidden band of said second layer, said third layer forbidden band being transparent to said light; and

a fourth layer disposed on said third layer, made of a semiconductor material different from the semiconductor materials of said second and third layers, and doped less heavily than said substrate, said fourth layer having a forbidden band of different value than said second and third layers, said fourth layer forbidden band being transparent to said light, said fourth layer including a central region and a peripheral region, said central region having said second conductivity type and said peripheral region having said first conductivity type.

5. A diode as claimed in claim 2, wherein the material of said first, second, third and fourth layers is:

space="preserve" listing-type="equation">Ga.sub.1-x Al.sub.x As

wherein x for said second layer is different than x for the other layers and is between zero and 1.

7. A diode as claimed in claim 5, wherein said layers have the following composition:

n-doped Ga₀.7 Al₀.3 As for the first layer;

p-doped Ga₀.95 Al₀.05 As for the second layer;

p-doped Ga₀.7 Al₀.3 As for the third layer and

Ga₀.9 Al₀.1 As n-doped in the peripheral region

of the fourth layer, and p-doped in the central region of the same, the structure of the diode having been submitted to a mesa etching.